公开(公告)号：US07978440B2

公开(公告)日：2011-07-12

申请号：US12008151

申请日：2008-01-09

申请人： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.

摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 还描述了用于制造器件的工艺。

公开(公告)号：US07331100B2

公开(公告)日：2008-02-19

申请号：US10886288

申请日：2004-07-07

申请人： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/187 ,  B05D5/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： An improved seed/AFM structure is formed by first depositing a layer of tantalum on the lower shield. A NiCr layer is then deposited on the Ta followed by a layer of IrMn. The latter functions effectively as an AFM for thicknesses in the 40-80 Angstrom range, enabling a reduced shield-to-shield spacing.

摘要翻译： 通过首先在下屏蔽层上沉积钽层来形成改进的种子/ AFM结构。 然后将NiCr层沉积在Ta上，随后沉积一层IrMn。 后者作为AFM在40-80埃范围内有效地起作用，从而能够减少屏蔽间隔。

公开(公告)号：US20060007605A1

公开(公告)日：2006-01-12

申请号：US10886288

申请日：2004-07-07

申请人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is provided.

摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 提供了一种制造该装置的方法。

公开(公告)号：US20080112089A1

公开(公告)日：2008-05-15

申请号：US12008151

申请日：2008-01-09

申请人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.

摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 还描述了用于制造器件的工艺。

公开(公告)号：US07978442B2

公开(公告)日：2011-07-12

申请号：US11906716

申请日：2007-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

摘要翻译： 公开了一种用于CPP-GMR传感器的新型CCP方案，其中在执行预离子处理之前，在诸如Al，Mg或AlCu的下部Cu间隔物和可氧化层之间插入诸如Hf的非晶态金属/合金层 （PIT）和离子辅助氧化（IAO），以将非晶层转变为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。 可以使用无氧Hf层，或者可以在CCP方案中插入薄Cu层以形成Hf / PIT / IAO或Hf / Cu / Al / PIT / IAO配置。 可以使用双重PIT / IAO工艺，如Hf / PIT / IAO / Al / PIT / IAO或Hf / PIT / IAO / Hf / PIT / IAO方案。

公开(公告)号：US20090091865A1

公开(公告)日：2009-04-09

申请号：US11906716

申请日：2007-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

摘要翻译： 公开了一种用于CPP-GMR传感器的新型CCP方案，其中在执行预离子处理之前，在诸如Al，Mg或AlCu的下部Cu间隔物和可氧化层之间插入诸如Hf的非晶态金属/合金层 （PIT）和离子辅助氧化（IAO），以将非晶层转变为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。 可以使用无氧Hf层，或者可以在CCP方案中插入薄Cu层以形成Hf / PIT / IAO或Hf / Cu / Al / PIT / IAO配置。 可以使用双重PIT / IAO工艺，如Hf / PIT / IAO / Al / PIT / IAO或Hf / PIT / IAO / Hf / PIT / IAO方案。

公开(公告)号：US07382584B2

公开(公告)日：2008-06-03

申请号：US11175932

申请日：2005-07-06

申请人： Yue Liu ,  Daniel G. Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

发明人： Yue Liu ,  Daniel G. Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

IPC分类号： G11B5/39 ,  F25D23/12 ,  H01L35/28 ,  G01R33/02

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3133 ,  G11B2005/3996

摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

摘要翻译： 通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。 来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

公开(公告)号：US20050186452A1

公开(公告)日：2005-08-25

申请号：US10786806

申请日：2004-02-25

申请人： Kunliang Zhang ,  Min Li ,  Rachid Sbiaa ,  Simon Liao ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Rachid Sbiaa ,  Simon Liao ,  Yue Liu

IPC分类号： G11B5/39 ,  G11B5/127 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08

CPC分类号： G11B5/3903 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115

摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type and its method of formation are disclosed, the sensor including a novel laminated free layer having ultra-thin (less than 3 angstroms thickness) laminas of Fe50 Co50 (or any iron rich alloy of the form CoxFe1-x with x between 0.25 and 0.75) interspersed with thicker layers of Co90Fe10 and Cu spacer layers to produce a free layer with good coercivity, a coefficient of magnetostriction that can be varied between positive and negative values and a high GMR ratio, due to enhancement of the bulk scattering coefficient by the laminas. The configuration of the lamina and layers in periodic groupings allow the coefficient of magnetostriction to be finely adjusted and the coercivity and GMR ratio to be optimized. The sensor performance can be further improved by including layers of Cu and Fe50Co50 in the synthetic antiferromagnetic pinned layer.

摘要翻译： 公开了合成自旋阀型的电流垂直平面（CPP）巨磁阻（GMR）传感器及其形成方法，该传感器包括具有超薄（小于3埃厚度）的新型层叠自由层， Fe O 50 Co 50（或任何形式为Fe x Fe 1-x x的任何富含铁的合金）的薄片与 x在0.25和0.75之间）散布有较厚层的Co 90 N 10 N 10和Cu间隔层，以产生具有良好矫顽力的自由层，可以变化的磁致伸缩系数 在正值和负值之间，高GMR比，由于片层散体系的增强。 周期性分组中的薄层和层的配置允许精细调节磁致伸缩系数，并优化矫顽力和GMR比。 通过在合成的反铁磁性钉扎层中包含Cu和Fe 50 Co 50层，可以进一步提高传感器性能。

公开(公告)号：US08325449B2

公开(公告)日：2012-12-04

申请号：US11895719

申请日：2007-08-27

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021

摘要： Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided.

摘要翻译： 等离子体氮化代替等离子体氧化，用于形成CCP层。 Al，Mg，Hf等都在这些条件下形成绝缘氮化物。 在等离子体氮化和/或在220℃以上的温度下进行后退火时，将结构维持在至少150℃的温度下，确保不会形成氮化铜。 此外，也避免了暴露的磁性层（主要是固定和自由层）的分子氧的非预期氧化。

公开(公告)号：US20120009337A1

公开(公告)日：2012-01-12

申请号：US13200013

申请日：2011-09-15

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/31 ,  C23C14/34

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。