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公开(公告)号:US20150014788A1
公开(公告)日:2015-01-15
申请号:US14167236
申请日:2014-01-29
申请人: Min-Yeop Park , Leonelli Daniele , Shigenobu Maeda , Han-Su Oh , Woong-Gi Kim , Jong-Hyuk Lee , Ju-Seob Jeong
发明人: Min-Yeop Park , Leonelli Daniele , Shigenobu Maeda , Han-Su Oh , Woong-Gi Kim , Jong-Hyuk Lee , Ju-Seob Jeong
IPC分类号: H01L27/088 , H01L29/66 , H01L29/78
CPC分类号: H01L27/0886 , H01L21/823412 , H01L21/823431 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要: A semiconductor device includes a gate on a substrate, a gate insulating layer along a sidewall and a bottom surface of the gate, and an L-shaped spacer structure on both sidewalls of the gate. A structure extends the distance between the gate and source/drain regions to either side of the gate.
摘要翻译: 半导体器件包括衬底上的栅极,沿着侧壁的栅极绝缘层和栅极的底表面,以及在栅极的两个侧壁上的L形间隔结构。 结构将栅极和源极/漏极区域之间的距离延伸到栅极的任一侧。