公开(公告)号：US20090250431A1

公开(公告)日：2009-10-08

申请号：US12404681

申请日：2009-03-16

申请人： Minako INUKAI ,  Yoshihiro OGAWA ,  Hiroshi TOMITA ,  Hiroyasu IIMORI ,  Yuji YAMADA ,  Yoshihiro UOZUMI ,  Linan JI ,  Kaori UMEZAWA ,  Hisadhi OKUCHI

发明人： Minako INUKAI ,  Yoshihiro OGAWA ,  Hiroshi TOMITA ,  Hiroyasu IIMORI ,  Yuji YAMADA ,  Yoshihiro UOZUMI ,  Linan JI ,  Kaori UMEZAWA ,  Hisadhi OKUCHI

IPC分类号： C23F1/00 ,  B08B3/08 ,  C23F1/08 ,  B08B13/00

CPC分类号： H01L21/02082 ,  H01L21/02057

摘要： A substrate processing method that processes a substrate on which a plurality of patterns adjacent to each other are formed, has: supplying a first processing liquid to a principal surface of the substrate that is dry and has the patterns formed thereon to make the first processing liquid adhere to the principal surface of the substrate; and supplying a second processing liquid having a higher surface tension than the first processing liquid to the principal surface of the substrate in the state where the first processing liquid adheres to the principal surface of the substrate to process the principal surface of the substrate with the second processing liquid.

摘要翻译： 在其上形成有彼此相邻的多个图案的基板的处理的基板处理方法具有：将第一处理液体供给到干燥后的基板的主面，并且形成有图案的第一处理液 粘附在基材的主表面上; 以及在所述第一处理液体粘附到所述基板的主表面的状态下，将具有比所述第一处理液体更高的表面张力的第二处理液供给到所述基板的主表面，以处理所述基板的所述主表面， 处理液体。

公开(公告)号：US20110088731A1

公开(公告)日：2011-04-21

申请号：US12978933

申请日：2010-12-27

申请人： Hiroshi TOMITA ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

发明人： Hiroshi TOMITA ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

IPC分类号： B08B3/00 ,  B08B3/02

CPC分类号： H01L21/02057 ,  B08B3/10 ,  B08B3/12 ,  C11D3/0052 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/67057

摘要： A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.

摘要翻译： 已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底 通过引入界面活性剂的负面区域。 或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

公开(公告)号：US20130068257A1

公开(公告)日：2013-03-21

申请号：US13423583

申请日：2012-03-19

申请人： Hiroshi TOMITA ,  Minako Inukai ,  Hiaashi Okuchi ,  Linan Ji

发明人： Hiroshi TOMITA ,  Minako Inukai ,  Hiaashi Okuchi ,  Linan Ji

IPC分类号： B08B3/10 ,  B08B7/04 ,  B08B3/04

CPC分类号： H01L21/67005 ,  H01L21/02057 ,  H01L21/67028

摘要： According to one embodiment, a method for cleaning a semiconductor substrate comprises supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, cooling the semiconductor substrate after stopping the heating and the supply of the water vapor and freezing water on the semiconductor substrate, after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film, and after melting the frozen film, drying the semiconductor substrate.

摘要翻译： 根据一个实施例，一种用于清洁半导体衬底的方法包括：在预定温度下对半导体衬底加热的同时，在形成有凹凸图案的半导体衬底的表面上提供水蒸气，在停止加热后冷却半导体衬底 以及在半导体衬底上的水蒸气和冷冻水的供应，在冷冻水之后，将纯水供应到半导体衬底上并熔化冷冻的膜，并且在熔化冷冻膜之后干燥半导体衬底。

公开(公告)号：US20110061684A1

公开(公告)日：2011-03-17

申请号：US12878382

申请日：2010-09-09

申请人： Hiroshi TOMITA ,  Hidekazu Hayashi ,  Minako Inukai ,  Yasuhito Yoshimizu ,  Kaori Umezawa

发明人： Hiroshi TOMITA ,  Hidekazu Hayashi ,  Minako Inukai ,  Yasuhito Yoshimizu ,  Kaori Umezawa

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  H01L21/02052

摘要： A cleaning method for a semiconductor wafer with cleaning liquid comprising: cleaning the semiconductor wafer while the temperature of the surface of the semiconductor wafer is from 30 degrees to 50 degrees, the cleaning liquid has lower surface tension and viscosity than water.

摘要翻译： 一种具有清洗液的半导体晶片的清洗方法，包括：在半导体晶片的表面的温度为30度至50度的范围内清洗半导体晶片，该清洗液具有比水低的表面张力和粘度。

公开(公告)号：US20100132742A1

公开(公告)日：2010-06-03

申请号：US12560210

申请日：2009-09-15

申请人： Hiroshi TOMITA ,  Hisashi OKUCHI ,  Minako INUKAI

发明人： Hiroshi TOMITA ,  Hisashi OKUCHI ,  Minako INUKAI

IPC分类号： B08B3/08 ,  B08B7/04 ,  B08B13/00

CPC分类号： B08B3/08 ,  B08B13/00 ,  H01L21/67051 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68728

摘要： A template cleaning method for cleaning a template for nanoimprint, according to an embodiment of the present invention includes placing a wafer on a stage provided in a chamber, cleaning the wafer placed on the stage, inspecting the wafer for particles after the cleaning of the wafer, placing the template on the stage after the inspection of the wafer, and cleaning the template placed on the stage.

摘要翻译： 根据本发明的实施例的用于清洁纳米压印模板的模板清洁方法包括将晶片放置在设置在室中的台上，清洁放置在台上的晶片，在晶片清洁之后检查晶片的颗粒 ，在检查晶片后将模板放置在平台上，并清洁放置在平台上的模板。

公开(公告)号：US20130061492A1

公开(公告)日：2013-03-14

申请号：US13423374

申请日：2012-03-19

申请人： Hisashi OKUCHI ,  Hidekazu HAYASHI ,  Linan JI ,  Yohei SATO ,  Hiroshi TOMITA

发明人： Hisashi OKUCHI ,  Hidekazu HAYASHI ,  Linan JI ,  Yohei SATO ,  Hiroshi TOMITA

IPC分类号： F26B5/04

CPC分类号： F26B7/00 ,  F26B5/04

摘要： According to one embodiment, a supercritical drying apparatus comprises a chamber being hermetically sealable and configured to store a semiconductor substrate, a heater configured to heat an inner side of the chamber, a supply unit configured to supply carbon dioxide to the chamber, a discharge unit configured to discharge carbon dioxide from the chamber, and a rotation unit configured to rotate the chamber by an angle equal to or greater than 90 degrees and equal to or smaller than 180 degrees with respect to the horizontal direction.

摘要翻译： 根据一个实施例，超临界干燥装置包括：气室密封并构造成存储半导体衬底;加热器，其构造成加热室的内侧;供应单元，被配置为向室供应二氧化碳;排放单元 被构造成从所述室排放二氧化碳，以及旋转单元，其被构造成使所述室相对于水平方向旋转等于或大于90度且等于或小于180度的角度。

公开(公告)号：US20110139192A1

公开(公告)日：2011-06-16

申请号：US12887332

申请日：2010-09-21

申请人： Tatsuhiko KOIDE ,  Shinsuke KIMURA ,  Yoshihiro OGAWA ,  Hisashi OKUCHI ,  Hiroshi TOMITA

发明人： Tatsuhiko KOIDE ,  Shinsuke KIMURA ,  Yoshihiro OGAWA ,  Hisashi OKUCHI ,  Hiroshi TOMITA

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/31116 ,  H01L21/324 ,  H01L21/67028

摘要： In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.

摘要翻译： 在一个实施例中，用于半导体衬底的表面处理装置包括保持单元，第一供应单元，第二供应单元，第三供应单元，干燥处理单元和拆卸单元。 保持单元保持其上形成有凸起图案的表面的半导体衬底。 第一供给单元向半导体基板的表面供给化学溶液，进行清洗和氧化。 第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。 第三供给单元向半导体基板的表面供给防水剂，在凸形图案的表面上形成防水保护膜。 干燥处理单元干燥半导体基板。 去除单元在保持凸起图案的同时去除防水保护膜。

公开(公告)号：US20120048304A1

公开(公告)日：2012-03-01

申请号：US13029776

申请日：2011-02-17

申请人： Yukiko KITAJIMA ,  Hiroshi TOMITA ,  Hidekazu HAYASHI ,  Hisashi OKUCHI ,  Yohei SATO

发明人： Yukiko KITAJIMA ,  Hiroshi TOMITA ,  Hidekazu HAYASHI ,  Hisashi OKUCHI ,  Yohei SATO

IPC分类号： B08B3/00

CPC分类号： H01L21/67034 ,  H01L21/02101

摘要： According to an embodiment, a supercritical drying method includes: introducing a semiconductor substrate of which a surface is wet with a supercritical displacement solvent into a chamber; supplying a first supercritical fluid being based on first carbon dioxide to the chamber; supplying a second supercritical fluid which is based on second carbon dioxide to the chamber, after the supplying of the first supercritical fluid; and lowering an inside pressure of the chamber to gasify the second supercritical fluid and to discharge the gasified second supercritical fluid from the chamber. The first carbon dioxide is generated by recovering and recycling the carbon dioxide discharged from the chamber. The second carbon dioxide contains no supercritical displacement solvent or contains the supercritical displacement solvent in a concentration lower than that in the first carbon dioxide.

摘要翻译： 根据一个实施方案，超临界干燥方法包括：将超临界位移溶剂表面被湿润的半导体衬底引入腔室; 将基于第一二氧化碳的第一超临界流体供应到所述室; 在供应第一超临界流体之后，向腔室供应基于第二二氧化碳的第二超临界流体; 并且降低所述室的内部压力以使所述第二超临界流体气化并从所述室排出所述气化的第二超临界流体。 第一种二氧化碳是通过回收和循环从室排出的二氧化碳产生的。 第二种二氧化碳不含超临界置换溶剂，或含有浓度低于第一种二氧化碳浓度的超临界置换溶剂。

公开(公告)号：US20090226077A1

公开(公告)日：2009-09-10

申请号：US12397587

申请日：2009-03-04

申请人： Kazuya HISANO ,  Hiroshi TOMITA ,  Tadashi NISHIYAMA

发明人： Kazuya HISANO ,  Hiroshi TOMITA ,  Tadashi NISHIYAMA

IPC分类号： G06K9/00

CPC分类号： G06K9/2027 ,  G01N21/9501 ,  G01N2021/8835

摘要： The present invention includes an illuminance adjustment step of setting an optimum illuminance of the illumination; and a defect inspection step of picking up the image of the substrate illuminated with the illumination at the optimum illuminance, wherein the illuminance adjustment step has: a first step of applying illuminations at different illuminances to a plurality of measurement regions on a front surface of the substrate and picking up an image of each of the measurement regions, while moving the substrate; a second step of making a luminance of the picked up image of each of the measurement regions into a histogram to find a reference luminance where an integral value from a maximum luminance side of the histogram is a predetermined value; and a third step of calculating a correlation between each of the reference luminances and the illuminance, and setting based on the correlation an illuminance at which the reference luminance coincides with a predetermined luminance, as the optimum illuminance.

摘要翻译： 本发明包括设置照明的最佳照度的照度调节步骤; 以及瑕疵检查步骤，用于拾取以最佳照度照明的基板的图像，其中所述照度调节步骤具有：第一步骤，将不同照度的照明施加到所述照明的前表面上的多个测量区域 在移动基板的同时拾取每个测量区域的图像; 使每个测量区域的拾取图像的亮度成为直方图以找到其中来自直方图的最大亮度侧的积分值为预定值的参考亮度的第二步骤; 以及第三步骤，计算每个参考亮度和照度之间的相关性，并且基于相关性将参考亮度与预定亮度重合的照度设置为最佳照度。

公开(公告)号：US20120247516A1

公开(公告)日：2012-10-04

申请号：US13369970

申请日：2012-02-09

申请人： Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Hidekazu HAYASHI ,  Yukiko KITAJIMA ,  Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII

发明人： Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Hidekazu HAYASHI ,  Yukiko KITAJIMA ,  Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII

IPC分类号： B08B3/00 ,  F26B25/14 ,  F26B25/06

CPC分类号： F26B3/02

摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。