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公开(公告)号:US07361545B2
公开(公告)日:2008-04-22
申请号:US11241611
申请日:2005-09-30
申请人: Ming Li , Dong-Uk Choi , Chang-Woo Oh , Dong-Won Kim , Min-Sang Kim , Sung-Hwan Kim , Kyoung-Hwan Yeo
发明人: Ming Li , Dong-Uk Choi , Chang-Woo Oh , Dong-Won Kim , Min-Sang Kim , Sung-Hwan Kim , Kyoung-Hwan Yeo
IPC分类号: H01L21/00
CPC分类号: H01L29/7883 , H01L27/108 , H01L27/10802 , H01L29/42336 , H01L29/42392 , H01L29/66825 , H01L29/7841
摘要: A field effect transistor includes a buried gate pattern that is electrically isolated by being surrounded by a tunneling insulating film. The field effect transistor also includes a channel region that is floated by source and drain regions, a gate insulating film, and the tunneling insulating film. The buried gate pattern and the tunneling insulating film extend into the source and drain regions. Thus, the field effect transistor efficiently stores charge carriers in the buried gate pattern and the floating channel region.
摘要翻译: 场效应晶体管包括通过被隧道绝缘膜包围而电隔离的掩埋栅极图案。 场效应晶体管还包括由源极和漏极区域浮置的沟道区,栅极绝缘膜和隧道绝缘膜。 掩埋栅极图案和隧道绝缘膜延伸到源极和漏极区域。 因此,场效应晶体管有效地将电荷载流子存储在掩埋栅极图案和浮动沟道区域中。
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公开(公告)号:US08680588B2
公开(公告)日:2014-03-25
申请号:US12072440
申请日:2008-02-26
申请人: Ming Li , Dong-Uk Choi , Chang-Woo Oh , Dong-Won Kim , Min-Sang Kim , Sung-Hwan Kim , Kyoung-Hwan Yeo
发明人: Ming Li , Dong-Uk Choi , Chang-Woo Oh , Dong-Won Kim , Min-Sang Kim , Sung-Hwan Kim , Kyoung-Hwan Yeo
IPC分类号: H01L29/66
CPC分类号: H01L29/7883 , H01L27/108 , H01L27/10802 , H01L29/42336 , H01L29/42392 , H01L29/66825 , H01L29/7841
摘要: A field effect transistor includes a buried gate pattern that is electrically isolated by being surrounded by a tunneling insulating film. The field effect transistor also includes a channel region that is floated by source and drain regions, a gate insulating film, and the tunneling insulating film. The buried gate pattern and the tunneling insulating film extend into the source and drain regions. Thus, the field effect transistor efficiently stores charge carriers in the buried gate pattern and the floating channel region.
摘要翻译: 场效应晶体管包括通过被隧道绝缘膜包围而电隔离的掩埋栅极图案。 场效应晶体管还包括由源极和漏极区域浮置的沟道区,栅极绝缘膜和隧道绝缘膜。 掩埋栅极图案和隧道绝缘膜延伸到源极和漏极区域。 因此,场效应晶体管有效地将电荷载流子存储在掩埋栅极图案和浮动沟道区域中。
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公开(公告)号:US20080142904A1
公开(公告)日:2008-06-19
申请号:US12072440
申请日:2008-02-26
申请人: Ming Li , Dong-Uk Choi , Chang Woo Oh , Dong-Won Kim , Min-Sang Kim , Sung-Hwan Kim , Kyoung-Hwan Yeo
发明人: Ming Li , Dong-Uk Choi , Chang Woo Oh , Dong-Won Kim , Min-Sang Kim , Sung-Hwan Kim , Kyoung-Hwan Yeo
IPC分类号: H01L27/108
CPC分类号: H01L29/7883 , H01L27/108 , H01L27/10802 , H01L29/42336 , H01L29/42392 , H01L29/66825 , H01L29/7841
摘要: A field effect transistor includes a buried gate pattern that is electrically isolated by being surrounded by a tunneling insulating film. The field effect transistor also includes a channel region that is floated by source and drain regions, a gate insulating film, and the tunneling insulating film. The buried gate pattern and the tunneling insulating film extend into the source and drain regions. Thus, the field effect transistor efficiently stores charge carriers in the buried gate pattern and the floating channel region.
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公开(公告)号:US20060131666A1
公开(公告)日:2006-06-22
申请号:US11241611
申请日:2005-09-30
申请人: Ming Li , Dong-Uk Choi , Chang-Woo Oh , Dong-Won Kim , Min-Sang Kim , Sung-Hwan Kim , Kyoung-Hwan Yeo
发明人: Ming Li , Dong-Uk Choi , Chang-Woo Oh , Dong-Won Kim , Min-Sang Kim , Sung-Hwan Kim , Kyoung-Hwan Yeo
IPC分类号: H01L21/336
CPC分类号: H01L29/7883 , H01L27/108 , H01L27/10802 , H01L29/42336 , H01L29/42392 , H01L29/66825 , H01L29/7841
摘要: A field effect transistor includes a buried gate pattern that is electrically isolated by being surrounded by a tunneling insulating film. The field effect transistor also includes a channel region that is floated by source and drain regions, a gate insulating film, and the tunneling insulating film. The buried gate pattern and the tunneling insulating film extend into the source and drain regions. Thus, the field effect transistor efficiently stores charge carriers in the buried gate pattern and the floating channel region.
摘要翻译: 场效应晶体管包括通过被隧道绝缘膜包围而电隔离的掩埋栅极图案。 场效应晶体管还包括由源极和漏极区域浮置的沟道区,栅极绝缘膜和隧道绝缘膜。 掩埋栅极图案和隧道绝缘膜延伸到源极和漏极区域。 因此,场效应晶体管有效地将电荷载流子存储在掩埋栅极图案和浮动沟道区域中。
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公开(公告)号:US20100035398A1
公开(公告)日:2010-02-11
申请号:US12588193
申请日:2009-10-07
申请人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
发明人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
IPC分类号: H01L21/336
CPC分类号: H01L29/0847 , H01L29/1054 , H01L29/665 , H01L29/66621 , H01L29/66636 , H01L29/66651 , H01L29/66795 , H01L29/7851 , H01L29/78687 , H01L29/7881
摘要: A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.
摘要翻译: 场效应晶体管(FET)及其制造方法,其中FET可以包括形成在半导体衬底上以形成有源区的隔离膜,以及形成在半导体衬底的给定部分上的栅电极。 沟道层可以形成在栅电极的一部分上,源极和漏极区形成在沟道层的任一侧上,使得沟道层与FET的源极和漏极区之间的边界可以垂直于 半导体衬底。
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公开(公告)号:US20120058613A1
公开(公告)日:2012-03-08
申请号:US13284889
申请日:2011-10-29
申请人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
发明人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
IPC分类号: H01L21/336
CPC分类号: H01L29/0847 , H01L29/1054 , H01L29/665 , H01L29/66621 , H01L29/66636 , H01L29/66651 , H01L29/66795 , H01L29/7851 , H01L29/78687 , H01L29/7881
摘要: A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.
摘要翻译: 场效应晶体管(FET)及其制造方法,其中FET可以包括形成在半导体衬底上以形成有源区的隔离膜,以及形成在半导体衬底的给定部分上的栅电极。 沟道层可以形成在栅电极的一部分上,源极和漏极区形成在沟道层的任一侧上,使得沟道层与FET的源极和漏极区之间的边界可以垂直于 半导体衬底。
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公开(公告)号:US08101475B2
公开(公告)日:2012-01-24
申请号:US12588193
申请日:2009-10-07
申请人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
发明人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
IPC分类号: H01L21/00
CPC分类号: H01L29/0847 , H01L29/1054 , H01L29/665 , H01L29/66621 , H01L29/66636 , H01L29/66651 , H01L29/66795 , H01L29/7851 , H01L29/78687 , H01L29/7881
摘要: A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.
摘要翻译: 场效应晶体管(FET)及其制造方法,其中FET可以包括形成在半导体衬底上以形成有源区的隔离膜,以及形成在半导体衬底的给定部分上的栅电极。 沟道层可以形成在栅电极的一部分上,源极和漏极区形成在沟道层的任一侧上,使得沟道层与FET的源极和漏极区之间的边界可以垂直于 半导体衬底。
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公开(公告)号:US08415210B2
公开(公告)日:2013-04-09
申请号:US13284889
申请日:2011-10-29
申请人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
发明人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
IPC分类号: H01L21/337 , H01L21/8234
CPC分类号: H01L29/0847 , H01L29/1054 , H01L29/665 , H01L29/66621 , H01L29/66636 , H01L29/66651 , H01L29/66795 , H01L29/7851 , H01L29/78687 , H01L29/7881
摘要: A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.
摘要翻译: 场效应晶体管(FET)及其制造方法,其中FET可以包括形成在半导体衬底上以形成有源区的隔离膜和形成在半导体衬底的给定部分上的栅电极。 沟道层可以形成在栅电极的一部分上,源极和漏极区形成在沟道层的任一侧上,使得沟道层与FET的源极和漏极区之间的边界可以垂直于 半导体衬底。
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公开(公告)号:US20050280102A1
公开(公告)日:2005-12-22
申请号:US11089371
申请日:2005-03-25
申请人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
发明人: Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
IPC分类号: H01L29/78 , H01L21/336 , H01L29/08 , H01L29/10 , H01L29/76 , H01L29/786 , H01L29/788
CPC分类号: H01L29/0847 , H01L29/1054 , H01L29/665 , H01L29/66621 , H01L29/66636 , H01L29/66651 , H01L29/66795 , H01L29/7851 , H01L29/78687 , H01L29/7881
摘要: A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.
摘要翻译: 场效应晶体管(FET)及其制造方法,其中FET可以包括形成在半导体衬底上以形成有源区的隔离膜,以及形成在半导体衬底的给定部分上的栅电极。 沟道层可以形成在栅电极的一部分上,源极和漏极区形成在沟道层的任一侧上,使得沟道层与FET的源极和漏极区之间的边界可以垂直于 半导体衬底。
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公开(公告)号:US20080093664A1
公开(公告)日:2008-04-24
申请号:US11894449
申请日:2007-08-21
申请人: Eun-Jung Yun , Min-Sang Kim , Sung-Min Kim , Dong-Won Kim , Sung-Hwan Kim
发明人: Eun-Jung Yun , Min-Sang Kim , Sung-Min Kim , Dong-Won Kim , Sung-Hwan Kim
IPC分类号: H01L29/792 , H01L21/336
CPC分类号: H01L29/792 , H01L27/10876 , H01L27/11 , H01L27/115 , H01L27/11521 , H01L27/11556 , H01L27/11568 , H01L29/40114 , H01L29/40117 , H01L29/42324 , H01L29/4234 , H01L29/42356 , H01L29/513 , H01L29/518 , H01L29/66666 , H01L29/66825 , H01L29/66833 , H01L29/7827 , H01L29/7881 , H01L29/7926
摘要: In a memory device and a method of manufacturing the memory device, the memory device includes a first gate electrode enclosed by a first gate insulating layer, a second gate electrode enclosed by a second gate insulating layer that can be an ONO layer, and a channel region vertically extending between the first gate electrode and the second gate electrode. The first gate electrode is used for removing a charge trapped in the second gate insulating layer. Thus, the memory device can have an improved characteristic when performing an erase operation.
摘要翻译: 在存储器件和存储器件的制造方法中,存储器件包括由第一栅极绝缘层包围的第一栅极电极,由可以是ONO层的第二栅极绝缘层包围的第二栅电极,以及通道 在第一栅电极和第二栅电极之间垂直延伸的区域。 第一栅电极用于去除在第二栅极绝缘层中俘获的电荷。 因此,当执行擦除操作时,存储器件可以具有改进的特性。
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