Fully silicided gate structure for FinFET devices
    1.
    发明授权
    Fully silicided gate structure for FinFET devices 有权
    FinFET器件的全硅化栅极结构

    公开(公告)号:US08008136B2

    公开(公告)日:2011-08-30

    申请号:US11379435

    申请日:2006-04-20

    IPC分类号: H01L21/00 H01L21/84

    摘要: A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a second metal layer on a top surface of the metal-silicide compound, and performing a second silicide process to form a fully-silicided gate electrode.

    摘要翻译: 一种方法可以包括在鳍结构上形成栅电极,在栅电极的顶表面上沉积第一金属层,执行第一硅化工艺以将栅电极的一部分转化为金属硅化物, 在金属硅化物化合物的顶表面上的金属层,并且执行第二硅化物处理以形成全硅化物栅电极。

    FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES
    2.
    发明申请
    FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES 有权
    FINFET器件的完全硅胶结构

    公开(公告)号:US20060177998A1

    公开(公告)日:2006-08-10

    申请号:US11379435

    申请日:2006-04-20

    IPC分类号: H01L21/3205

    摘要: A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a second metal layer on a top surface of the metal-silicide compound, and performing a second silicide process to form a fully-silicided gate electrode.

    摘要翻译: 一种方法可以包括在鳍结构上形成栅电极,在栅电极的顶表面上沉积第一金属层,执行第一硅化工艺以将栅电极的一部分转化为金属硅化物, 在金属硅化物化合物的顶表面上的金属层,并且执行第二硅化物处理以形成全硅化物栅电极。

    Double and triple gate MOSFET devices and methods for making same
    3.
    发明授权
    Double and triple gate MOSFET devices and methods for making same 有权
    双栅极和三栅极MOSFET器件及其制造方法

    公开(公告)号:US08580660B2

    公开(公告)日:2013-11-12

    申请号:US13523603

    申请日:2012-06-14

    IPC分类号: H01L29/72

    摘要: A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.

    摘要翻译: 双栅极金属氧化物半导体场效应晶体管(MOSFET)包括鳍状物,第一栅极和第二栅极。 第一个门形成在鳍的顶部。 第二个门围绕翅片和第一个门。 在另一实施方案中,三栅极MOSFET包括鳍片,第一栅极,第二栅极和第三栅极。 第一个门形成在鳍的顶部。 第二个门形成在翅片附近。 第三栅极形成在翅片附近并与第二栅极相对。

    Method for doping structures in FinFET devices
    4.
    发明授权
    Method for doping structures in FinFET devices 有权
    FinFET器件掺杂结构的方法

    公开(公告)号:US07235436B1

    公开(公告)日:2007-06-26

    申请号:US10614051

    申请日:2003-07-08

    IPC分类号: H01L21/84

    摘要: A method for doping fin structures in FinFET devices includes forming a first glass layer on the fin structure of a first area and a second area. The method further includes removing the first glass layer from the second area, forming a second glass layer on the fin structure of the first area and the second area, and annealing the first area and the second area to dope the fin structures.

    摘要翻译: 在FinFET器件中掺杂鳍结构的方法包括在第一区域和第二区域的鳍结构上形成第一玻璃层。 该方法还包括从第二区域去除第一玻璃层,在第一区域和第二区域的翅片结构上形成第二玻璃层,并退火第一区域和第二区域以掺杂翅片结构。

    Narrow fins by oxidation in double-gate finfet
    5.
    发明授权
    Narrow fins by oxidation in double-gate finfet 有权
    狭窄的翅片通过氧化在双门finfet

    公开(公告)号:US06812119B1

    公开(公告)日:2004-11-02

    申请号:US10614052

    申请日:2003-07-08

    IPC分类号: H01L213205

    摘要: A method of forming fins for a double-gate fin field effect transistor (FinFET) includes forming a second layer of semi-conducting material over a first layer of semi-conducting material and forming double caps in the second layer of semi-conducting material. The method further includes forming spacers adjacent sides of each of the double caps and forming double fins in the first layer of semi-conducting material beneath the double caps. The method also includes thinning the double fins to produce narrow double fins.

    摘要翻译: 一种形成双栅极鳍效应晶体管(FinFET)的鳍片的方法包括在第一半导体材料层上形成第二半导电材料层,并在第二半导体材料层中形成双重盖子。 该方法还包括在每个双盖的侧面上形成间隔物,并在双重帽下面的第一半导体材料层中形成双翅片。 该方法还包括使双翅片变薄以产生窄的双翅片。

    Systems and methods for forming multiple fin structures using metal-induced-crystallization
    6.
    发明授权
    Systems and methods for forming multiple fin structures using metal-induced-crystallization 有权
    使用金属诱导结晶形成多个翅片结构的系统和方法

    公开(公告)号:US07498225B1

    公开(公告)日:2009-03-03

    申请号:US11428722

    申请日:2006-07-05

    摘要: A method for forming fin structures for a semiconductor device that includes a substrate and a dielectric layer formed on the substrate is provided. The method includes etching the dielectric layer to form a first structure, depositing an amorphous silicon layer over the first structure, and etching the amorphous silicon layer to form second and third fin structures adjacent first and second side surfaces of the first structure. The second and third fin structures may include amorphous silicon material. The method further includes depositing a metal layer on upper surfaces of the second and third fin structures, performing a metal-induced crystallization operation to convert the amorphous silicon material of the second and third fin structures to a crystalline silicon material, and removing the first structure.

    摘要翻译: 提供了一种用于形成半导体器件的鳍结构的方法,该半导体器件包括衬底和形成在衬底上的电介质层。 该方法包括蚀刻介电层以形成第一结构,在第一结构上沉积非晶硅层,以及蚀刻非晶硅层以形成与第一结构的第一和第二侧表面相邻的第二和第三鳍结构。 第二和第三鳍结构可以包括非晶硅材料。 该方法还包括在第二和第三鳍结构的上表面上沉积金属层,执行金属诱导结晶操作以将第二鳍和第三鳍结构的非晶硅材料转化成晶体硅材料,并且去除第一结构 。

    Reversed T-shaped finfet
    7.
    发明授权
    Reversed T-shaped finfet 失效
    反转T形finfet

    公开(公告)号:US07541267B1

    公开(公告)日:2009-06-02

    申请号:US11765611

    申请日:2007-06-20

    IPC分类号: H01L21/28

    摘要: A method includes forming a first rectangular mesa from a layer of semiconducting material and forming a first dielectric layer around the first mesa. The method further includes forming a first rectangular mask over a first portion of the first mesa leaving an exposed second portion of the first mesa and etching the exposed second portion of the first mesa to produce a reversed T-shaped fin from the first mesa.

    摘要翻译: 一种方法包括从半导体材料层形成第一矩形台面并在第一台面周围形成第一介电层。 该方法还包括在第一台面的第一部分上形成第一矩形掩模,离开第一台面的暴露的第二部分并蚀刻第一台面的暴露的第二部分以从第一台面产生反向的T形翅片。

    Damascene finfet gate with selective metal interdiffusion
    8.
    发明授权
    Damascene finfet gate with selective metal interdiffusion 有权
    大马士革finfet门与选择性金属相互扩散

    公开(公告)号:US06855989B1

    公开(公告)日:2005-02-15

    申请号:US10674520

    申请日:2003-10-01

    摘要: A fin field effect transistor includes a fin, a source region, a drain region, a first gate electrode and a second gate electrode. The fin includes a channel. The source region is formed adjacent a first end of the fin and the drain region is formed adjacent a second end of the fin. The first gate electrode includes a first layer of metal material formed adjacent the fin. The second gate electrode includes a second layer of metal material formed adjacent the first layer. The first layer of metal material has a different work function than the second layer of metal material. The second layer of metal material selectively diffuses into the first layer of metal material via metal interdiffusion.

    摘要翻译: 翅片场效应晶体管包括鳍片,源极区域,漏极区域,第一栅极电极和第二栅极电极。 鳍包括一个通道。 源区域邻近翅片的第一端形成,并且漏极区域邻近翅片的第二端形成。 第一栅电极包括邻近翅片形成的第一金属材料层。 第二栅电极包括与第一层相邻形成的第二金属材料层。 第一层金属材料具有与第二层金属材料不同的功函数。 金属材料的第二层选择性地通过金属相互扩散扩散到金属材料的第一层中。

    FinFET device with multiple fin structures
    9.
    发明授权
    FinFET device with multiple fin structures 有权
    FinFET器件具有多个鳍结构

    公开(公告)号:US06762448B1

    公开(公告)日:2004-07-13

    申请号:US10405343

    申请日:2003-04-03

    IPC分类号: H01L2708

    摘要: A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide layer. The semiconductor device further includes a source region formed at one end of the group of fin structures, a drain region formed at an opposite end of the group of fin structures, and at least one gate.

    摘要翻译: 半导体器件包括一组翅片结构。 翅片结构的组包括导电材料,并且通过在氧化物层的开口中生长导电材料而形成。 半导体器件还包括形成在鳍片结构组的一端处的源极区域,形成在鳍片结构组的相对端处的漏极区域和至少一个栅极。

    Double and triple gate MOSFET devices and methods for making same
    10.
    发明授权
    Double and triple gate MOSFET devices and methods for making same 有权
    双栅极和三栅极MOSFET器件及其制造方法

    公开(公告)号:US08222680B2

    公开(公告)日:2012-07-17

    申请号:US10274961

    申请日:2002-10-22

    IPC分类号: H01L29/72

    摘要: A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.

    摘要翻译: 双栅极金属氧化物半导体场效应晶体管(MOSFET)包括鳍状物,第一栅极和第二栅极。 第一个门形成在鳍的顶部。 第二个门围绕翅片和第一个门。 在另一实施方案中,三栅极MOSFET包括鳍片,第一栅极,第二栅极和第三栅极。 第一个门形成在鳍的顶部。 第二个门形成在翅片附近。 第三栅极形成在翅片附近并与第二栅极相对。