公开(公告)号：US07586968B2

公开(公告)日：2009-09-08

申请号：US11878745

申请日：2007-07-26

申请人： Minoru Niigaki ,  You Wang ,  Yujin Zheng ,  Hirofumi Kan

发明人： Minoru Niigaki ,  You Wang ,  Yujin Zheng ,  Hirofumi Kan

IPC分类号： H01S3/22

CPC分类号： H01S3/227 ,  H01S3/02 ,  H01S3/041 ,  H01S3/08054 ,  H01S3/0815 ,  H01S3/09415 ,  H01S3/1028 ,  H01S5/4062

摘要： An alkali-encapsulated cell internally having an alkali metal vapor G encapsulated is provided with first and second heaters 11, 12. The alkali-encapsulated cell 10 has first and second end faces 10a, 10b opposed to each other, and a side face 10c connecting the two end faces 10a, 10b. Each of the first and second heaters 11, 12 has a covering portion 11B, 12B and an extending portion 11C, 12C. Some portions of the alkali-encapsulated cell 10 are inserted in the covering portions 11B, 12B. On the other hand, the extending portions 11C, 12C extend in directions away from the alkali-encapsulated cell 10. The first and second heaters 11, 12 are separated from each other with a distance d0 between them in an opposing direction of the first and second end faces 10a, 10b.

摘要翻译： 在内部具有封入了碱金属蒸气G的碱封装的电池设置有第一和第二加热器11,12。碱封装的电池10具有彼此相对的第一和第二端面10a，10b，以及连接 两个端面10a，10b。 第一和第二加热器11,12中的每一个具有覆盖部分11B，12B和延伸部分11C，12C。 碱封装电池10的一部分插入到覆盖部11B，12B中。 另一方面，延伸部分11C，12C沿着远离碱封装的电池10的方向延伸。第一和第二加热器11,12彼此分开，在它们之间的距离d0在第一和第二加热器10的相反方向上 第二端面10a，10b。

公开(公告)号：US20080031299A1

公开(公告)日：2008-02-07

申请号：US11878745

申请日：2007-07-26

申请人： Minoru Niigaki ,  You Wang ,  Yujin Zheng ,  Hirofumi Kan

发明人： Minoru Niigaki ,  You Wang ,  Yujin Zheng ,  Hirofumi Kan

IPC分类号： H01S3/227

CPC分类号： H01S3/227 ,  H01S3/02 ,  H01S3/041 ,  H01S3/08054 ,  H01S3/0815 ,  H01S3/09415 ,  H01S3/1028 ,  H01S5/4062

摘要： An alkali-encapsulated cell internally having an alkali metal vapor G encapsulated is provided with first and second heaters 11, 12. The alkali-encapsulated cell 10 has first and second end faces 10a, 10b opposed to each other, and a side face 10c connecting the two end faces 10a, 10b. Each of the first and second heaters 11, 12 has a covering portion 11B, 12B and an extending portion 11C, 12C. Some portions of the alkali-encapsulated cell 10 are inserted in the covering portions 11B, 12B. On the other hand, the extending portions 11C, 12C extend in directions away from the alkali-encapsulated cell 10. The first and second heaters 11, 12 are separated from each other with a distance d0 between them in an opposing direction of the first and second end faces 10a, 10b.

摘要翻译： 在内部具有封装有碱金属蒸气G的碱封装的电池设置有第一和第二加热器11,12。 碱封装的电池10具有彼此相对的第一和第二端面10a，10b以及连接两个端面10a，10b的侧面10c。 第一和第二加热器11,12中的每个具有覆盖部分11B，12B和延伸部分11C，12C。碱封装的电池10的一些部分插入到覆盖部分11B，12B中。 另一方面，延伸部分11C，12C沿着远离碱封装的电池10的方向延伸。 第一和第二加热器11,12在它们之间沿第一和第二端面10a，10b的相反方向彼此间隔开距离d 0。

公开(公告)号：US07208874B2

公开(公告)日：2007-04-24

申请号：US10507011

申请日：2003-02-24

申请人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

IPC分类号： H01J40/06 ,  H01J43/00

CPC分类号： H01J31/50 ,  H01J1/32 ,  H01J29/023 ,  H01J29/482 ,  H01J31/506 ,  H01J43/22

摘要： A transmission secondary electron emitter is provided which emits secondary electrons generated by the incidence of primary electrons. The transmission secondary electron emitter includes a secondary electron emitting layer which is made of diamond or a material containing diamond as a main component, and of which one surface is the surface of incidence for making the primary electrons incident thereon, and the other surface is the surface of emission for emitting the secondary electrons. Also included is a voltage applying arrangement for applying a predetermined voltage between the surfaces of the incidence and the emission of the secondary electron emitting layer to form an electric field in the secondary electron emitting layer.

摘要翻译： 提供发射二次电子发射器，其发射由一次电子的入射产生的二次电子。 透射二次电子发射体包括由金刚石制成的二次电子发射层，或以金刚石为主要成分的材料，其中一个表面是使一次电子入射到其上的入射面，另一面为 用于发射二次电子的发射表面。 还包括用于在入射表面和二次电子发射层的发射之间施加预定电压以在二次电子发射层中形成电场的电压施加装置。

公开(公告)号：US07045957B2

公开(公告)日：2006-05-16

申请号：US10223378

申请日：2002-08-20

申请人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

IPC分类号： H01J40/06

CPC分类号： H01J43/08 ,  H01J1/34 ,  H01J40/06 ,  H01J2201/3421 ,  H01J2231/50021 ,  Y10T428/30

摘要： In the polycrystal diamond thin film in accordance with the present invention, the average particle size is at least 1.5 μm and, in a Raman spectrum obtained by Raman spectroscopy, a peak intensity near a wave number of 1580 cm−1 has a ratio of 0.2 or less with respect to a peak intensity near a wave number of 1335 cm−1. The photocathode and electron tube in accordance with the present invention comprise the polycrystal diamond thin film as a light-absorbing layer.

摘要翻译： 在本发明的多晶金刚石薄膜中，平均粒径为1.5μm以上，通过拉曼光谱法获得的拉曼光谱中，波数为1580cm -1以上的峰强度， SUP>相对于波数为1335cm -1附近的峰值强度具有0.2或更小的比率。 根据本发明的光电阴极和电子管包括多晶金刚石薄膜作为光吸收层。

公开(公告)号：US06831341B2

公开(公告)日：2004-12-14

申请号：US10416703

申请日：2003-05-14

申请人： Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

发明人： Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

IPC分类号： H01J134

CPC分类号： H01J31/507 ,  H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01J2231/50021

摘要： Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.

摘要翻译： 从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内，并且在光吸收中产生光电子 光电子在光吸收层4内扩散，并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ，光电子的能量大于表面层5中的电子亲和力，因此光电子容易被排出到外部。 这里，光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成，因此 得到具有高量子效率的太阳能型半导体光电阴极1。

公开(公告)号：US20080121928A1

公开(公告)日：2008-05-29

申请号：US11987216

申请日：2007-11-28

申请人： Minoru Niigaki ,  Kazutoshi Nakajima ,  Toru Hirohata ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Kazutoshi Nakajima ,  Toru Hirohata ,  Hirofumi Kan

IPC分类号： H01L31/0336

CPC分类号： H01L31/1035 ,  H01L31/0735 ,  Y02E10/544

摘要： A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).

摘要翻译： 半导体光电阴极具有掺杂有p型杂质并且彼此接合以形成异质结的第一和第二III-V族化合物半导体层。 第二III-V族化合物半导体层用作光吸收层，第二III-V族化合物半导体层的能隙小于第一III-V族化合物半导体层的能隙，使用Be或C作为p 型掺杂剂。 此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。 第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

公开(公告)号：US20080121909A1

公开(公告)日：2008-05-29

申请号：US11987215

申请日：2007-11-28

申请人： Minoru Niigaki ,  Toru Hirohata ,  Kazutoshi Nakajima ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Toru Hirohata ,  Kazutoshi Nakajima ,  Hirofumi Kan

IPC分类号： H01L33/00 ,  H01L31/0336

CPC分类号： H01L33/30 ,  H01L31/03046 ,  H01L31/1035 ,  H01L33/02 ,  H01L33/025 ,  H01L33/305 ,  Y02E10/544

摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).

摘要翻译： 半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合， 做异质结。 第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物 半导体层可以沉积在第一III-V族化合物半导体层上。 第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

公开(公告)号：US20050045866A1

公开(公告)日：2005-03-03

申请号：US10961142

申请日：2004-10-12

申请人： Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

发明人： Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

IPC分类号： H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  H01J43/08 ,  H01L29/06

CPC分类号： H01J31/507 ,  H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01J2231/50021

摘要： Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.

摘要翻译： 从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内，并且在光吸收中产生光电子 光电子在光吸收层4内扩散，并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ，光电子的能量大于表面层5中的电子亲和力，因此光电子容易被排出到外部。 这里，光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成，因此 得到具有高量子效率的太阳能型半导体光电阴极1。

公开(公告)号：US07652425B2

公开(公告)日：2010-01-26

申请号：US10504979

申请日：2003-02-24

申请人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

IPC分类号： H01J40/00 ,  H01J40/16

CPC分类号： H01J31/50 ,  H01J1/34 ,  H01J31/506 ,  H01J2201/3421

摘要： A transmission type photocathode includes a light absorption layer 1 formed of diamond or a material containing diamond as a main component, a supporting frame 21 for reinforcing the mechanical strength of the light absorption layer 1, a first electrode 31 provided at the plane of incidence of the light absorption layer 1, and a second electrode 32 provided at the plane of emission of the light absorption layer 1. A voltage is applied between the plane of incidence and plane of emission of the light absorption layer 1 to form an electric field in the light absorption layer 1. When light to be detected is made incident and photoelectrons occur in the light absorption layer 1, the photoelectrons are accelerated to the plane of emission by the electric field formed in the light absorption layer 1, and emitted to the outside of the transmission type photocathode.

摘要翻译： 透射型光电阴极包括由金刚石形成的光吸收层1或含有金刚石作为主要成分的材料，用于增强光吸收层1的机械强度的支撑框架21，设置在该入射平面上的第一电极31 光吸收层1和设置在光吸收层1的发射平面处的第二电极32.在光吸收层1的入射平面和发射平面之间施加电压，以在光吸收层1中形成电场。 光吸收层1.当在光吸收层1中发生待检测的光入射光电子时，光电子通过形成在光吸收层1中的电场而被加速到发射平面，并且发射到 透射型光电阴极。

公开(公告)号：US20090273281A1

公开(公告)日：2009-11-05

申请号：US12432850

申请日：2009-04-30

申请人： Minoru Niigaki ,  Toru Hirohata ,  Harumasa Yoshida ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Toru Hirohata ,  Harumasa Yoshida ,  Hirofumi Kan

IPC分类号： H01J40/06 ,  H01L29/12

CPC分类号： H01J31/50 ,  H01J1/34 ,  H01J40/06 ,  H01J2231/5001

摘要： The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X

摘要翻译： 本发明的光电阴极设置有由单晶化合物半导体构成的支撑基板，形成在支撑基板上的光吸收层，并且与支撑基板相比能量带隙更小，以吸收透过该基板的入射光 支撑基板，从而产生光电子;以及表面层，其形成在光吸收层上以降低光吸收层的功函数，其中支撑衬底包括Al（1-x）GaxN（0≤x≤1 ），并且光吸收层包括由选自Al，Ga和In以及N中的至少一种材料构成的化合物半导体。