利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.033 秒)

    SOLID-STATE IMAGING DEVICE
    4.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号：US20110298023A1

    公开(公告)日：2011-12-08

    申请号：US13154579

    申请日：2011-06-07

    申请人： Tatsuya Ohguro

    发明人： Tatsuya Ohguro

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/1464

    摘要： According to the embodiments, a solid-state imaging device is provided, which includes a first electrode film, a first photoelectric conversion film, a first conductive film, a dielectric film, a second photoelectric conversion film, and a second conductive film. The first photoelectric conversion film covers the surface and the side of the first electrode film. The first conductive film covers the light receiving surface and the side of the first photoelectric conversion film. The dielectric film covers a portion corresponding to the side of the first photoelectric conversion film in the first conductive film. The second photoelectric conversion film covers a main portion of a portion corresponding to the light receiving surface of the first photoelectric conversion film in the first conductive film. The second conductive film covers the light receiving surface and the side of the second photoelectric conversion film.

    摘要翻译： 根据实施例，提供了一种固态成像装置，其包括第一电极膜，第一光电转换膜，第一导电膜，电介质膜，第二光电转换膜和第二导电膜。 第一光电转换膜覆盖第一电极膜的表面和侧面。 第一导电膜覆盖光接收表面和第一光电转换膜的侧面。 电介质膜覆盖与第一导电膜中的第一光电转换膜侧相对应的部分。 第二光电转换膜覆盖与第一导电膜中的第一光电转换膜的光接收表面相对应的部分的主要部分。 第二导电膜覆盖光接收表面和第二光电转换膜的一侧。

    Variable-capacitance element, variable-capacitance device, and portable phone including variable-capacitance device
    5.
    发明授权
    Variable-capacitance element, variable-capacitance device, and portable phone including variable-capacitance device 有权
    可变电容元件，可变电容器件以及包括可变电容器件的便携式电话

    公开(公告)号：US07177134B2

    公开(公告)日：2007-02-13

    申请号：US11137794

    申请日：2005-05-26

    申请人： Tamio Ikehashi ,  Tatsuya Ohguro ,  Mie Matsuo

    发明人： Tamio Ikehashi ,  Tatsuya Ohguro ,  Mie Matsuo

    IPC分类号： H01G5/01 ,  H01G4/005

    CPC分类号： H01G5/16 ,  H01G5/18

    摘要： A variable-capacitance element includes: a first electrode and a second electrode which are fixed on a substrate with a spacing; a movable electrode; an actuator which is supported on a supporting portion provided on the substrate to drive the movable electrode. The movable electrode is put in an electrically connecting state with the second electrode, when the movable electrode is driven to a first position by the actuator, and the movable electrode is put in an electrically non-connected state with the second electrode, when the movable electrode is driven to a second position by the actuator. The movable electrode is constituted to be always put in an electrically non-connected state with the first electrode.

    摘要翻译： 可变电容元件包括：以间隔固定在基板上的第一电极和第二电极; 可动电极; 支撑在设置在基板上的支撑部上以驱动可动电极的致动器。 当可动电极通过致动器驱动到第一位置时，可动电极与第二电极处于电连接状态，并且可移动电极与第二电极处于与电不连接的状态，当可移动电极 电极被致动器驱动到第二位置。 可动电极构成为与第一电极总是处于非连接状态。

    MOSFET with a thin gate insulating film
    7.
    发明申请
    MOSFET with a thin gate insulating film 失效
    具有薄栅绝缘膜的MOSFET

    公开(公告)号：US20050224898A1

    公开(公告)日：2005-10-13

    申请号：US11143594

    申请日：2005-06-03

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L27/088 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

    CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed an the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成所述基板的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅电极（2）和漏区（6）的电压为1.5V以下。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06777756B2

    公开(公告)日：2004-08-17

    申请号：US10102631

    申请日：2002-03-22

    申请人： Tatsuya Ohguro

    发明人： Tatsuya Ohguro

    IPC分类号： H01L2976

    CPC分类号： H01L29/0692 ,  H01L29/4238

    摘要： An aspect the present invention is to provide a semiconductor device including at least one MISFET structure having an element isolation region formed on a surface portion of a semiconductor substrate to have a closed region, an element region formed on the surface region of the semiconductor substrate to surround the element isolation region, a gate insulating film formed to cover at least the surface of the element region, a contact region formed on the element isolation region, and at least four gate electrodes connected to the contact region and formed on the surface of the element region via the gate insulating film to extend to at least outside the element region.

    摘要翻译： 本发明的一个方面是提供一种半导体器件，其包括至少一个MISFET结构，其具有形成在半导体衬底的表面部分上的元件隔离区域以具有闭合区域，形成在半导体衬底的表面区域上的元件区域 围绕元件隔离区域，形成为至少覆盖元件区域的表面的栅极绝缘膜，形成在元件隔离区域上的接触区域以及连接到接触区域并形成在元件隔离区域的表面上的至少四个栅电极 元件区域经由栅极绝缘膜延伸至至少在元件区域外部。