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    Heterocyclic-ring condensed benzothiazine compound
    1.
    发明授权
    Heterocyclic-ring condensed benzothiazine compound 失效
    杂环稠合苯并噻嗪化合物

    公开(公告)号：US06583138B1

    公开(公告)日：2003-06-24

    申请号：US09622458

    申请日：2001-01-04

    申请人： Mitsuaki Miyamoto ,  Tatsuya Yoshiuchi ,  Keizo Sato ,  Motohiro Soejima ,  Takashi Sato ,  Koichi Kikuchi ,  Hiroyuki Yoshimura ,  Katsuhiro Moriya ,  Yoshinori Sakuma ,  Shigeru Akasofu ,  Koji Yamada

    发明人： Mitsuaki Miyamoto ,  Tatsuya Yoshiuchi ,  Keizo Sato ,  Motohiro Soejima ,  Takashi Sato ,  Koichi Kikuchi ,  Hiroyuki Yoshimura ,  Katsuhiro Moriya ,  Yoshinori Sakuma ,  Shigeru Akasofu ,  Koji Yamada

    IPC分类号： C07D51304

    CPC分类号： C07D513/04

    摘要： The invention provides a novel heterocyclic ring condensed benzothiazine compound which is effective for prevention or remedy of disease, in which histamine, leukotriene and the like participate. The heterocyclic ring condensed benzothiazine compound of the present invention or a pharmacologically acceptable salt thereof is effective for prevention or remedy of disease, in which a chemical mediator, such as histamine, leukotriene and the like, participate, for example, asthma, allergic coryza, atopic dermatitis, hives, hay fever, gastrointestinal allergy, food allergy and the like. Further, the heterocyclic ring condensed benzothiazine compound of the present invention, its pharmacologically acceptable salt or hydrates thereof is represented by the following formula: In the formula, the ring Het represents an unsaturated heterocyclic ring; R1 and R2 are the same as or different from each other, and each represents halogen atom, a lower alkyl group that may be substituted with a halogen atom, a lower alkoxy group that may be substituted with a halogen atom, a lower alkyl lower alkoxy group, cyano group; D represents a lower alkylene group and the like that may have a substituent; Q represents, for example, the formula —NR20R2 (in the formula, R20 and R21 are the same as or different from each other, and each represents hydrogen atom, a lower alkyl group that may be substituted with a halogen atom, an aryl group that may have a substituent, an arylalkyl group that may have a substituent, a heteroaryl group that may have a substituent or a heteroarylalkyl group that may have a substituent, or R20 and R21 may form a 3- to 8-membered ring along with the nitrogen atom to which they are bound); and x represents an integer of from 1 to 2.

    摘要翻译： 本发明提供一种新颖的杂环稠合苯并噻嗪化合物，其对组胺，白细胞三烯等参与的疾病的预防或治疗有效。 本发明的杂环稠合苯并噻嗪化合物或其药理学上可接受的盐对于预防或治疗其中化学介质如组胺，白三烯等参与的疾病是有效的，例如哮喘，过敏性鼻炎， 特应性皮炎，荨麻疹，花粉症，胃肠道过敏，食物过敏等。 此外，本发明的杂环稠合苯并噻嗪化合物，其药理学上可接受的盐或其水合物由下式表示：式中，环Het表示不饱和杂环; R1和R2彼此相同或不同，各自表示卤素原子，可以被卤素原子取代的低级烷基，可被卤素原子取代的低级烷氧基，低级烷基低级烷氧基 基团，氰基; D表示可以具有取代基的低级亚烷基等; Q表示例如式-NR20R2（式中，R20和R21彼此相同或不同，各自表示氢原子，可被卤素原子取代的低级烷基，芳基 可以具有取代基的芳基烷基，可以具有取代基的芳基烷基，可以具有取代基的杂芳基或可以具有取代基的杂芳基烷基，或者R20和R21可以与 氮原子）; x表示1〜2的整数。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    5.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20090215247A1

    公开(公告)日：2009-08-27

    申请号：US12434637

    申请日：2009-05-02

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/304

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Light illumination during wafer dicing to prevent aluminum corrosion
    6.
    发明授权
    Light illumination during wafer dicing to prevent aluminum corrosion 有权
    晶圆切割时的光照，防止铝腐蚀

    公开(公告)号：US07998793B2

    公开(公告)日：2011-08-16

    申请号：US12434637

    申请日：2009-05-02

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Manufacturing Method of Semiconductor Device
    7.
    发明申请
    Manufacturing Method of Semiconductor Device 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20080138962A1

    公开(公告)日：2008-06-12

    申请号：US11632993

    申请日：2004-07-22

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/304

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 通过照明装置（7a）和（7b）的晶片。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Containment vessel and nuclear power plant
    9.
    发明授权
    Containment vessel and nuclear power plant 有权

    公开(公告)号：US09818495B2

    公开(公告)日：2017-11-14

    申请号：US13988966

    申请日：2011-09-14

    申请人： Takashi Sato

    发明人： Takashi Sato

    IPC分类号： G21C13/10 ,  G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C15/18 ,  G21F9/02

    CPC分类号： G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C13/10 ,  G21C15/18 ,  G21F9/02 ,  Y02E30/40

    摘要： A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

    Power supply circuit and apparatus including the circuit
    10.
    发明授权
    Power supply circuit and apparatus including the circuit 有权

    公开(公告)号：US09653994B2

    公开(公告)日：2017-05-16

    申请号：US13215035

    申请日：2011-08-22

    申请人： Katsumi Taguchi ,  Takashi Sato

    发明人： Katsumi Taguchi ,  Takashi Sato

    IPC分类号： G01R31/00 ,  H02M3/158 ,  H02M1/36

    CPC分类号： H02M3/158 ,  H02M1/36

    摘要： A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.