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1.
公开(公告)号:US20220344893A1
公开(公告)日:2022-10-27
申请号:US17641164
申请日:2019-12-04
IPC分类号: H01S5/0237 , H01S5/0234 , H01S5/22 , H01S5/042
摘要: Provided here are: semiconductor layers comprised of an n-type cladding layer formed on a surface of an n-type GaAs substrate, active layers formed on surfaces of the n-type cladding layer, p-type cladding layers formed on surfaces of the active layers, and p-type contact layers formed on surfaces of the p-type cladding layers, the p-type cladding layers and the p-type contact layers being formed to have a ridges; insulating films covering surfaces of the semiconductor layers but having openings on surfaces of the p-type contact layer; and conductive layers connected to the p-type contact layers through the openings, the conductive layers being formed on surfaces of the insulating films to cover planar portions provided in the semiconductor layers adjacently to the ridges; wherein, together with the conductive layers, convex sidewalls are provided to be placed over portions of the planar portions at their sides nearer to the ridges.
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公开(公告)号:US20210050706A1
公开(公告)日:2021-02-18
申请号:US16965578
申请日:2018-04-03
摘要: A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer.
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