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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10685932B2

    公开(公告)日：2020-06-16

    申请号：US16082244

    申请日：2016-06-08

    申请人： Mitsubishi Electric Corporation

    发明人： Sho Suzuki ,  Tsuyoshi Osaga

    IPC分类号： H01L31/0312 ,  H01L23/00 ,  H01L29/45

    摘要： A semiconductor substrate (1) has a front surface and a back surface that are opposite each other. A first metal layer (2) is formed on the front surface of the semiconductor substrate (1). A second metal layer (3) for soldering is formed on the first metal layer (2). A third metal layer (5) is formed on the back surface of the semiconductor substrate (1). A fourth metal layer (6) for soldering is formed on the third metal layer (5). The second metal layer (3) has a larger thickness than that of the fourth metal layer (6). The first, third, and fourth metal layers (2,5,6) are not divided in a pattern. The second metal layer (3) is divided in a pattern and has a plurality of metal layers electrically connected to each other via the first metal layer (2).

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11069769B2

    公开(公告)日：2021-07-20

    申请号：US16619430

    申请日：2017-09-07

    申请人： Mitsubishi Electric Corporation

    发明人： Tsuyoshi Osaga ,  Yasuo Ata

    IPC分类号： H01L29/06 ,  H01L27/088 ,  H01L29/739

    摘要： A semiconductor device includes, on an upper surface side of an N−-type drift layer, a P-type well layer, an N-type emitter layer, a gate insulation film, and a gate electrode, and includes, on a lower surface side of the N−-type drift layer, an N-type buffer layer, a P-type collector layer, and an N++-type layer. The N++-type layer is partially formed in the N-type buffer layer. The N++-type layer has impurity concentration being higher than impurity concentration of the N-type buffer layer and being equal to or higher than impurity concentration of the P-type collector layer.