TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER

    公开(公告)号:US20200028327A1

    公开(公告)日:2020-01-23

    申请号:US16585948

    申请日:2019-09-27

    IPC分类号: H01S5/183 H01S5/042

    摘要: To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.

    SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER

    公开(公告)号:US20200251887A1

    公开(公告)日:2020-08-06

    申请号:US16488595

    申请日:2018-02-27

    IPC分类号: H01S5/22 H01S5/18 H01S5/32

    摘要: A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) of growing a first cladding layer of a first conductive type on a substrate; (b) of growing a first optical guide layer of the first conductive type on the first cladding layer; (c) of forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) of planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after said the planarizing, at least one side surface of the holes is a {10-10} facet.

    SURFACE-EMITTING LASER DEVICE AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER DEVICE

    公开(公告)号:US20210184430A1

    公开(公告)日:2021-06-17

    申请号:US17123126

    申请日:2020-12-16

    IPC分类号: H01S5/18 H01S5/20 H01S5/02

    摘要: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10-10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.

    SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME

    公开(公告)号:US20210013700A1

    公开(公告)日:2021-01-14

    申请号:US16956512

    申请日:2018-12-17

    IPC分类号: H01S5/183 H01S5/20 H01S5/343

    摘要: A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.