Thermoelectric transducing material thin film, sensor device, and its manufacturing method
    4.
    发明授权
    Thermoelectric transducing material thin film, sensor device, and its manufacturing method 有权
    热电转换材料薄膜,传感器装置及其制造方法

    公开(公告)号:US07282384B2

    公开(公告)日:2007-10-16

    申请号:US10532825

    申请日:2003-11-11

    IPC分类号: H01L21/203 H01L35/34

    CPC分类号: H01L35/22 G01N27/16

    摘要: The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.

    摘要翻译: 本发明提供一种SiGe系薄膜,该薄膜的制造方法以及该薄膜的应用。 本发明涉及通过溅射制造SiGe系半导体薄膜,作为其信号源为温度差的传感器装置的构成元件的热电转换材料部件的部件的制造方法, 局部温差成为电信号,其中通过在溅射蒸发之后热处理SiGe基半导体薄膜材料来制造SiGe基薄膜; 涉及上述形成薄膜的方法,其中在通过溅射蒸发形成SiGe基半导体薄膜时衬底温度和/或等离子体输出升高以形成具有更高结晶结构的薄膜; 涉及通过上述方法制造的基于SiGe的薄膜,其作为热电转换材料成分的一部分,该热电转换材料成分是其信号源是温差的传感器装置的组成元件,并将局部温差转换成 电信号,通过热处理赋予了良好的热电特性; 以及包含作为构成元素的上述SiGe系薄膜的气体传感器装置。

    Thermoelectric transducing material thin film, sensor device, and its manufacturing method
    5.
    发明申请
    Thermoelectric transducing material thin film, sensor device, and its manufacturing method 有权
    热电转换材料薄膜,传感器装置及其制造方法

    公开(公告)号:US20060063291A1

    公开(公告)日:2006-03-23

    申请号:US10532825

    申请日:2003-11-11

    IPC分类号: H01L21/363 H01L29/12

    CPC分类号: H01L35/22 G01N27/16

    摘要: The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.

    摘要翻译: 本发明提供一种SiGe系薄膜,该薄膜的制造方法以及该薄膜的应用。 本发明涉及通过溅射制造SiGe系半导体薄膜,作为其信号源为温度差的传感器装置的构成元件的热电转换材料部件的部件的制造方法, 局部温差成为电信号,其中通过在溅射蒸发之后热处理SiGe基半导体薄膜材料来制造SiGe基薄膜; 涉及上述形成薄膜的方法,其中在通过溅射蒸发形成SiGe基半导体薄膜时衬底温度和/或等离子体输出升高以形成具有更高结晶结构的薄膜; 涉及通过上述方法制造的基于SiGe的薄膜,其作为热电转换材料成分的一部分,该热电转换材料成分是其信号源是温差的传感器装置的组成元件,并将局部温度差转换成 电信号,通过热处理赋予了良好的热电特性; 以及包含作为构成元素的上述SiGe系薄膜的气体传感器装置。

    Process for producing oxygen partial pressure detecting part of resistance oxygen sensor
    6.
    发明申请
    Process for producing oxygen partial pressure detecting part of resistance oxygen sensor 审中-公开
    电阻氧传感器氧分压检测部分生产工艺

    公开(公告)号:US20060057292A1

    公开(公告)日:2006-03-16

    申请号:US10540873

    申请日:2003-12-22

    IPC分类号: B05D3/02 C08J7/04

    CPC分类号: G01N27/125

    摘要: The present invention provides a method of manufacturing a porous thick film of an oxide that has extremely few cracks and can be satisfactorily used as an oxygen partial pressure detecting part of an oxygen sensor. The present invention relates to a method of manufacturing such a porous thick film as an oxygen partial pressure detecting part of a resistive oxygen sensor comprising taking a fine particle powder of an oxide containing cerium oxide as a raw material powder, preparing a paste containing the oxide, printing the paste onto a substrate by screen printing, calcining and sintering, the method comprising a step of carrying out heat treatment to effect particle growth from the average particle diameter of the raw material powder to a particle diameter less than the average particle diameter of the ultimately obtained thick film, a step of mixing the particle growth-effected powder with a solvent, a step of dispersing agglomerated particles in the solvent, a step of removing a precipitate, a step of evaporating off the solvent, and a step of mixing the resulting oxide with an organic binder to obtain the paste.

    摘要翻译: 本发明提供一种制造氧化物的多孔厚膜的方法,其具有极少的裂纹,可以令人满意地用作氧传感器的氧分压检测部。 本发明涉及一种电阻式氧传感器的氧分压检测部分的多孔厚膜的制造方法,其特征在于,将含有氧化铈的氧化物的微粒粉末作为原料粉末,制备含有氧化物 通过丝网印刷,煅烧和烧结将糊料印刷在基材上,该方法包括进行热处理以使颗粒生长从原料粉末的平均粒径到小于平均粒径的粒径的步骤 最终获得的厚膜,将颗粒生长粉末与溶剂混合的步骤,将附聚颗粒分散在溶剂中的步骤,除去沉淀物的步骤,蒸发溶剂的步骤和混合步骤 得到的氧化物与有机粘合剂得到糊状物。

    Complex oxide having high thermoelectric conversion efficiency
    7.
    发明授权
    Complex oxide having high thermoelectric conversion efficiency 失效
    具有高热电转换效率的复合氧化物

    公开(公告)号:US06727424B2

    公开(公告)日:2004-04-27

    申请号:US10364807

    申请日:2003-02-11

    IPC分类号: H01L3500

    摘要: This invention provides a complex oxide comprising the features of : (i) being represented by the formula:(A0.4B0.1M0.1)x/0.6Co2Oy wherein A and B are elements differing from each other, each represents Ca, Sr or Ba, M represents Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, 1.7≦x≦2, and 3.8≦y≦5, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 100 K (absolute temperature) or higher and (iii) having an electrical resistivity of 10 m&OHgr;cm or less at a temperature of 100 K (absolute temperature) or higher. The complex oxide of the invention is a material composed of low-toxicity elements existing in large amounts, the material having superior heat resistance and chemical durability and a high thermoelectric conversion efficiency in a temperature range of 600 K or higher which falls in the temperature range of waste heat.

    摘要翻译: 本发明提供一种复合氧化物,其包含以下特征:(i)由下式表示:(A0.4B0.1M0.1)x / 0.6Co2Oy其中A和B是彼此不同的元素,各自表示Ca,Sr或 Ba,M表示Bi,Sc,Y,La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Yb或Lu,1.7 <= x <= 2和3.8 < = 5,(ii)在100K(绝对温度)以上的温度下具有100kV / K以上的塞贝克系数和(iii)在100K的温度下具有10mOmegacm以下的电阻率(绝对值) 温度)以上。 本发明的复合氧化物是由大量存在的低毒元素组成的材料,该材料具有优异的耐热性和化学耐久性,并且在600K以上的温度范围内具有较高的热电转换效率,其温度范围 的余热。