公开(公告)号：US08097927B2

公开(公告)日：2012-01-17

申请号：US12000402

申请日：2007-12-12

申请人： Mitsuharu Tai ,  Toshio Miyazawa

发明人： Mitsuharu Tai ,  Toshio Miyazawa

IPC分类号： H01L27/14

CPC分类号： H01L27/1214 ,  G06F3/0412 ,  G06F3/042 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14692

摘要： The present invention provides an image display unit integrated with a photo-sensor, comprising a photo-sensing element with high sensitivity and low noise and a polycrystalline silicon TFT prepared at the same time on an insulating substrate using planer process. After a first electrode 11 and a second electrode 12 of the photo-sensing element are made of polycrystalline silicon film, a light receiving layer (photoelectric conversion layer) 13 of the photo-sensing element is prepared by amorphous silicon film on upper layer. In this case, a polycrystalline silicon TFT is prepared at the same time.

摘要翻译： 本发明提供了一种与光传感器集成的图像显示单元，其包括具有高灵敏度和低噪声的光敏元件，以及使用平面处理在绝缘基板上同时制备的多晶硅TFT。 在感光元件的第一电极11和第二电极12由多晶硅膜制成之后，通过上层的非晶硅膜制备感光元件的光接收层（光电转换层）13。 在这种情况下，同时制备多晶硅TFT。

公开(公告)号：US20080164473A1

公开(公告)日：2008-07-10

申请号：US12000402

申请日：2007-12-12

申请人： Mitsuharu Tai ,  Toshio Miyazawa

发明人： Mitsuharu Tai ,  Toshio Miyazawa

IPC分类号： H01L33/00

CPC分类号： H01L27/1214 ,  G06F3/0412 ,  G06F3/042 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14692

摘要： The present invention provides an image display unit integrated with a photo-sensor, comprising a photo-sensing element with high sensitivity and low noise and a polycrystalline silicon TFT prepared at the same time on an insulating substrate using planer process. After a first electrode 11 and a second electrode 12 of the photo-sensing element are made of polycrystalline silicon film, a light receiving layer (photoelectric conversion layer) 13 of the photo-sensing element is prepared by amorphous silicon film on upper layer. In this case, a polycrystalline silicon TFT is prepared at the same time.

摘要翻译： 本发明提供了一种与光传感器集成的图像显示单元，其包括具有高灵敏度和低噪声的光敏元件，以及使用平面处理在绝缘基板上同时制备的多晶硅TFT。 在感光元件的第一电极11和第二电极12由多晶硅膜制成之后，通过上层的非晶硅膜制备感光元件的光接收层（光电转换层）13。 在这种情况下，同时制备多晶硅TFT。

公开(公告)号：US20110284817A1

公开(公告)日：2011-11-24

申请号：US13109985

申请日：2011-05-17

申请人： Yoshitaka SASAGO ,  Masaharu Kinoshita ,  Mitsuharu Tai ,  Takashi Kobayashi

发明人： Yoshitaka SASAGO ,  Masaharu Kinoshita ,  Mitsuharu Tai ,  Takashi Kobayashi

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L27/2481 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472

摘要： In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an OFF current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers. In this manner, it is suppressed to form the crystal grain boundaries thoroughly penetrating between an n-type polysilicon layer and a p-type polysilicon layer in the electric-field relaxation layer, and therefore, it is prevented to generate a leakage current flowing through the crystal grain boundaries in application of a reverse-bias voltage without increasing a height of the polysilicon diode.

摘要翻译： 在非易失性半导体存储器件中，提供了一种通过减小作为选择元件的多晶硅二极管的截止电流来减小器件厚度来促进微细加工的技术。 形成以低浓度掺杂有杂质并作为电阻可变存储器的选择元件的多晶硅二极管的电场弛豫层的多晶硅层，以被分成两层或多层，例如多晶硅 层。 以这种方式抑制电场弛豫层中的n型多晶硅层和p型多晶硅层之间的晶粒边界完全透过，从而防止产生流过的漏电流 在不增加多晶硅二极管的高度的情况下施加反偏压的晶粒边界。

公开(公告)号：US07906834B2

公开(公告)日：2011-03-15

申请号：US12219837

申请日：2008-07-29

申请人： Toshiyuki Mine ,  Mitsuharu Tai ,  Akio Shima

发明人： Toshiyuki Mine ,  Mitsuharu Tai ,  Akio Shima

IPC分类号： H01L23/552

CPC分类号： H01L21/268 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/78642

摘要： A display device having a thin film semiconductor device including a semiconductor thin film having first and second semiconductor regions formed each into a predetermined shape above an insulative substrate, a conductor fabricated into a predetermined shape to the semiconductor thin film and a dielectric film put between the semiconductor thin film and the conductor, in which the semiconductor thin film is a polycrystal thin film with the crystallization ratio thereof exceeding 90% and the difference of unevenness on the surface of the semiconductor thin film does not exceed 10 nm.

摘要翻译： 一种具有薄膜半导体器件的显示装置，该薄膜半导体器件包括半导体薄膜，该半导体薄膜具有在绝缘性基板的上方形成为规定形状的第一半导体区域和第二半导体区域，对该半导体薄膜形成为规定形状的导体， 半导体薄膜和导体，其中半导体薄膜是结晶比率超过90％的多晶薄膜，并且半导体薄膜的表面上的不均匀度不超过10nm。

公开(公告)号：US07902003B2

公开(公告)日：2011-03-08

申请号：US11620154

申请日：2007-01-05

申请人： Kiyoshi Ouchi ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

发明人： Kiyoshi Ouchi ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.

摘要翻译： 一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。 在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。 当制造TFT时，该低电阻半导体层用于形成源极和漏极。 由于C，N和O杂质降低了TFT的迁移率，因此使用多晶硅，其中污染物浓度满足以下条件：碳浓度nlE 3×1019 cm -3，氮浓度NlE 5×1017 cm-3， 和氧浓度nlE; 3×1019 cm-3。

公开(公告)号：US07456428B2

公开(公告)日：2008-11-25

申请号：US11711623

申请日：2007-02-28

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L29/04

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μos。

公开(公告)号：US07262821B2

公开(公告)日：2007-08-28

申请号：US10772431

申请日：2004-02-06

申请人： Mitsuharu Tai ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Hideo Sato

发明人： Mitsuharu Tai ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Hideo Sato

IPC分类号： G02F1/136

CPC分类号： H01L27/1296 ,  G02F1/13624 ,  G02F1/136277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78621 ,  H01L29/78627

摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

摘要翻译： 大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。 在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。 构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

公开(公告)号：US07192852B2

公开(公告)日：2007-03-20

申请号：US11172958

申请日：2005-07-05

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

公开(公告)号：US07666769B2

公开(公告)日：2010-02-23

申请号：US11702576

申请日：2007-02-06

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

摘要翻译： 提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。 形成在设置在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光束扫描 重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的离散重整区域。 在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致 电影。

公开(公告)号：US07456913B2

公开(公告)日：2008-11-25

申请号：US11878285

申请日：2007-07-23

申请人： Mitsuharu Tai ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Hideo Sato

发明人： Mitsuharu Tai ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Hideo Sato

IPC分类号： G02F1/136

CPC分类号： H01L27/1296 ,  G02F1/13624 ,  G02F1/136277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78621 ,  H01L29/78627

摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

摘要翻译： 大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。 在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。 构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。