公开(公告)号：US09151831B2

公开(公告)日：2015-10-06

申请号：US14357817

申请日：2012-08-21

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

IPC分类号： G01S7/486 ,  G01S17/89

CPC分类号： G01S7/4861 ,  G01S7/4863 ,  G01S17/89

摘要： In a distance measurement device of an embodiment, a light source emits modulation light in a first charge transfer cycle, and emission of the modulation light of the light source is stopped in a second charge transfer cycle. In each of the first and second charge transfer cycles, the charges generated in a photosensitive region are distributed to a first accumulation region and a second accumulation region. A first value is obtained based on readout values corresponding to amounts of accumulated charges of the first accumulation region. A second value is obtained based on readout values corresponding to amounts of accumulated charges of the second accumulation region. A distance is calculated based on the first value and the second value.

摘要翻译： 在实施例的距离测量装置中，光源在第一电荷转移周期中发射调制光，并且在第二电荷转移周期中停止光源的调制光的发射。 在第一和第二电荷转移循环中的每一个中，在感光区域中产生的电荷被分配到第一累积区域和第二累积区域。 基于与第一累积区域的累积电荷量对应的读出值获得第一值。 基于对应于第二累积区域的累积电荷量的读出值获得第二值。 基于第一值和第二值计算距离。

公开(公告)号：US20140327903A1

公开(公告)日：2014-11-06

申请号：US14357817

申请日：2012-08-21

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

IPC分类号： G01S7/486

CPC分类号： G01S7/4861 ,  G01S7/4863 ,  G01S17/89

摘要： In a distance measurement device of an embodiment, a light source emits modulation light in a first charge transfer cycle, and emission of the modulation light of the light source is stopped in a second charge transfer cycle. In each of the first and second charge transfer cycles, the charges generated in a photosensitive region are distributed to a first accumulation region and a second accumulation region. A first value is obtained based on readout values corresponding to amounts of accumulated charges of the first accumulation region. A second value is obtained based on readout values corresponding to amounts of accumulated charges of the second accumulation region. A distance is calculated based on the first value and the second value.

摘要翻译： 在实施例的距离测量装置中，光源在第一电荷转移周期中发射调制光，并且在第二电荷转移周期中停止光源的调制光的发射。 在第一和第二电荷转移循环中的每一个中，在感光区域中产生的电荷被分配到第一累积区域和第二累积区域。 基于与第一累积区域的累积电荷量对应的读出值获得第一值。 基于对应于第二累积区域的累积电荷量的读出值获得第二值。 基于第一值和第二值计算距离。

公开(公告)号：US09134401B2

公开(公告)日：2015-09-15

申请号：US13431136

申请日：2012-03-27

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

IPC分类号： G01C3/08 ,  G01S7/486 ,  G01S17/89 ,  G01S17/10 ,  H01L27/146

CPC分类号： G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14603 ,  H01L27/14609

摘要： A charge generating region is arranged within a region of a polygonal pixel region excluding a corner portion thereof. A signal charge collecting region is arranged at a center portion of the pixel region on the inside of the charge generating region so as to be surrounded by the charge generating region. A photogate electrode is arranged on the charge generating region. A transfer electrode is arranged between the signal charge collecting region and the charge generating region. A semiconductor region has a portion located at the corner portion of the pixel region and the remaining portion located on the outside of the pixel region, and has a conductivity type opposite to that of the signal charge collecting region and an impurity concentration higher than that of surroundings thereof. A readout circuit is arranged in the semiconductor region.

摘要翻译： 电荷产生区域布置在除了其拐角部分之外的多边形像素区域的区域内。 信号电荷收集区域被布置在电荷产生区域的内侧上的像素区域的中心部分处，以被电荷产生区域包围。 光电栅极配置在电荷产生区上。 传输电极布置在信号电荷收集区域和电荷产生区域之间。 半导体区域具有位于像素区域的角部的部分和位于像素区域的外侧的剩余部分，并且具有与信号电荷收集区域相反的导电类型，并且杂质浓度高于 周围环境。 读出电路设置在半导体区域中。

公开(公告)号：US09053998B2

公开(公告)日：2015-06-09

申请号：US13415966

申请日：2012-03-09

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

IPC分类号： H01L27/148 ,  H01L27/146 ,  G01S17/89 ,  G01S17/10 ,  G01S7/486

CPC分类号： H01L27/14607 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/1461 ,  H01L27/14612

摘要： A range sensor includes a charge generating region, a signal charge collecting region, an unnecessary charge collecting region, a photogate electrode, a transfer electrode, and an unnecessary charge collecting gate electrode. Outer peripheries of the charge generating region extend to sides of a polygonal pixel region except for corner portions thereof. The signal charge collecting region is disposed at a center portion of the pixel region and inside the charge generating region so as to be surrounded by the charge generating region. The unnecessary charge collecting region is disposed in the corner portion of the pixel region and outside the charge generating region. The photogate electrode is disposed on the charge generating region. The transfer electrode is disposed between the signal charge collecting region and the charge generating region. The unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region.

摘要翻译： 范围传感器包括电荷产生区域，信号电荷收集区域，不必要的电荷收集区域，光栅电极，转移电极和不必要的电荷收集栅电极。 电荷产生区域的外周延伸到除了其角部以外的多边形像素区域的侧面。 信号电荷收集区域设置在像素区域的中心部分和电荷产生区域内，以便被电荷产生区域包围。 不必要的电荷收集区域设置在像素区域的角部和电荷产生区域的外部。 光栅电极设置在电荷产生区上。 转移电极设置在信号电荷收集区域和电荷产生区域之间。 不需要的电荷收集栅电极设置在不需要的电荷收集区和电荷产生区之间。

公开(公告)号：US20130258311A1

公开(公告)日：2013-10-03

申请号：US13431136

申请日：2012-03-27

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Jun Hiramitsu

IPC分类号： G01C3/00

CPC分类号： G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14603 ,  H01L27/14609

摘要： A charge generating region is arranged within a region of a polygonal pixel region excluding a corner portion thereof. A signal charge collecting region is arranged at a center portion of the pixel region on the inside of the charge generating region so as to be surrounded by the charge generating region. A photogate electrode is arranged on the charge generating region. A transfer electrode is arranged between the signal charge collecting region and the charge generating region. A semiconductor region has a portion located at the corner portion of the pixel region and the remaining portion located on the outside of the pixel region, and has a conductivity type opposite to that of the signal charge collecting region and an impurity concentration higher than that of surroundings thereof. A readout circuit is arranged in the semiconductor region.

摘要翻译： 电荷产生区域布置在除了其拐角部分之外的多边形像素区域的区域内。 信号电荷收集区域被布置在电荷产生区域的内侧上的像素区域的中心部分处，以被电荷产生区域包围。 光电栅极配置在电荷产生区上。 传输电极布置在信号电荷收集区域和电荷产生区域之间。 半导体区域具有位于像素区域的角部的部分和位于像素区域的外侧的剩余部分，并且具有与信号电荷收集区域相反的导电类型，并且杂质浓度高于 周围环境。 读出电路设置在半导体区域中。

公开(公告)号：US20130001651A1

公开(公告)日：2013-01-03

申请号：US13634249

申请日：2011-02-22

申请人： Mitsuhito Mase ,  Akira Sakamoto ,  Takashi Suzuki ,  Tomohiro Yamazaki ,  Yoshimaro Fujii

发明人： Mitsuhito Mase ,  Akira Sakamoto ,  Takashi Suzuki ,  Tomohiro Yamazaki ,  Yoshimaro Fujii

IPC分类号： H01L31/102

CPC分类号： H01L27/1464 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/0236

摘要： A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.

摘要翻译： 半导体光检测元件设置有具有半导体层的硅衬底和在半导体层上生长且具有比半导体层低的杂质浓度的外延半导体层; 以及设置在外延半导体层的表面上的导体。 在外延半导体层中形成感光区域。 至少在与半导体层中的感光区域相对的表面中形成不规则的凹凸。 不规则的凹凸光学曝光。

公开(公告)号：US20100201966A1

公开(公告)日：2010-08-12

申请号：US12666572

申请日：2008-07-02

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Seiichiro Mizuno ,  Mitsutaka Takemura

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Seiichiro Mizuno ,  Mitsutaka Takemura

IPC分类号： G01C3/08 ,  H01L31/12 ,  H01L27/146

CPC分类号： H01L27/1464 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2924/00014

摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

摘要翻译： 作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。 由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合 如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。 如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确 距离测量启用。

公开(公告)号：US08665422B2

公开(公告)日：2014-03-04

申请号：US13585103

申请日：2012-08-14

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Seiichiro Mizuno ,  Mitsutaka Takemura

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Seiichiro Mizuno ,  Mitsutaka Takemura

IPC分类号： G01C3/08

CPC分类号： H01L27/1464 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2924/00014

摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

摘要翻译： 作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。 由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合 如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。 如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确 距离测量启用。

公开(公告)号：US08598674B2

公开(公告)日：2013-12-03

申请号：US13498202

申请日：2010-11-18

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Tomohiro Yamazaki

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Tomohiro Yamazaki

IPC分类号： H01L27/146 ,  G01C3/08

CPC分类号： H01L27/14643 ,  G01S7/4814 ,  G01S7/4816 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14603 ,  H01L27/1464

摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.

摘要翻译： 范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。 光栅电极PG设置在表面1FT上。 第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。 第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

公开(公告)号：US09134423B2

公开(公告)日：2015-09-15

申请号：US13497350

申请日：2010-10-26

申请人： Takashi Suzuki ,  Mitsuhito Mase

发明人： Takashi Suzuki ,  Mitsuhito Mase

IPC分类号： H04N7/18 ,  G01S17/89 ,  G01B11/02 ,  G01B11/00 ,  G01S17/10 ,  G01S7/486 ,  G01S11/12 ,  H01L27/146

CPC分类号： G01S17/89 ,  G01B11/002 ,  G01B11/022 ,  G01S7/4863 ,  G01S11/12 ,  G01S17/10 ,  H01L27/14603 ,  H04N7/18

摘要： A photogate electrode PG has first and second sides opposed to each other. First and second semiconductor regions FD1, FD2 are arranged as spatially separated from each other on the side where the first side of the photogate electrode PG exists and along the first side. Third and fourth semiconductor regions FD3, FD4 are arranged as spatially separated from each other on the side where the second side of the photogate electrode PG exists and along the second side. First gate electrodes TX1 are provided between the photogate electrode PG and the first and third semiconductor regions FD1, FD3. Second gate electrodes TX2 are provided between the photogate electrode PG and the second and fourth semiconductor regions FD2, FD4. The first to fourth semiconductor regions FD1-FD4 are formed so as to overlap with respective p-type well regions W1-W4 and so as to be surrounded by the respective well regions W1-W4.

摘要翻译： 光栅电极PG具有彼此相对的第一和第二侧。 第一和第二半导体区域FD1，FD2被布置为在光栅电极PG的第一侧存在并且沿着第一侧在空间上彼此分离。 第三和第四半导体区域FD3，FD4被布置为在光栅电极PG的第二面存在并且沿着第二面在空间上彼此分离。 第一栅电极TX1设置在光栅电极PG与第一和第三半导体区域FD1，FD3之间。 第二栅极TX2设置在光栅电极PG与第二和第四半导体区域FD2，FD4之间。 第一至第四半导体区域FD1-FD4形成为与相应的p型阱区域W1-W4重叠并且被各个阱区域W1-W4包围。