公开(公告)号：US5019887A

公开(公告)日：1991-05-28

申请号：US596428

申请日：1990-10-11

申请人： Mitsuyuki Niwa ,  Takayoshi Arai ,  Isamu Shimizu ,  Eiji Takeuchi ,  Tsutomu Murakami ,  Shunichi Ishihara

发明人： Mitsuyuki Niwa ,  Takayoshi Arai ,  Isamu Shimizu ,  Eiji Takeuchi ,  Tsutomu Murakami ,  Shunichi Ishihara

IPC分类号： H01L31/0392 ,  H01L31/09 ,  H01L31/20

CPC分类号： H01L31/204 ,  H01L31/03921 ,  H01L31/095 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A photosensor has a photoconductive member. The photoconductive member has a structure comprising a laminated product consisting of functional thin films superposed on one another. The laminated product comprises at least two functional thin films. The functional thin film containing 10 atomic % or less of hydrogen. The band gaps and conduction types and/or conductivity of the functional thin films are controlled to provide high photo sensitivity.

摘要翻译： 光电传感器具有感光元件。 感光体具有包括由彼此重叠的功能性薄膜组成的层压产品的结构。 层压产品包括至少两个功能薄膜。 含有10原子％以下的氢的功能性薄膜。 控制功能薄膜的带隙和导电类型和/或导电性以提供高的光敏性。

公开(公告)号：US5244509A

公开(公告)日：1993-09-14

申请号：US741734

申请日：1991-08-07

申请人： Kozo Arao ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Eiji Takeuchi

发明人： Kozo Arao ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Eiji Takeuchi

IPC分类号： H01L31/04 ,  H01L31/0236

CPC分类号： H01L31/0236 ,  Y02E10/50 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/24479

摘要： A reflective solar cell substrate comprising a base member composed of a metallic material provided with irregularities at the surface thereof and a buffer layer disposed on said base member so as to cover the entire of said irregularities at the surface of said base member, said buffer layer being composed of a substantially transparent or translucent and conductive material, said buffer layer being provided with irregularities at the surface thereof, and said irregularities at the surface of said buffer layer comprising a plurality of thickened convex portions and a plurality of thinned concave portions, said portions being alternately arranged. The reflective solar cell substrate reflects light reaching the substrate without being absorbed by the optically active layer at an effective angle, whereby the solar cell exhibits improved photovoltaic characteristics.

摘要翻译： 一种反射式太阳能电池基板，包括由在其表面设置有凹凸的金属材料构成的基底构件和设置在所述基底构件上的缓冲层，以覆盖所述基底构件的表面上的整个所述凹凸，所述缓冲层 由基本上透明或半透明且导电的材料组成，所述缓冲层在其表面设置有凹凸，并且所述缓冲层表面的所述凹凸包括多个增厚的凸起部分和多个变薄的凹部，所述 交替布置的部分。 反射太阳能电池基板反射到达基板的光，而不会以有效的角度被光学活性层吸收，由此太阳能电池表现出改进的光电特性。

公开(公告)号：US5352300A

公开(公告)日：1994-10-04

申请号：US950288

申请日：1992-09-24

申请人： Mitsuyuki Niwa

发明人： Mitsuyuki Niwa

IPC分类号： C01G9/02 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06 ,  H01L31/0376

CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell having a semiconductor layer has a structure in which a first electrode, a semiconductor layer, and a second electrode are stacked on a substrate, wherein a zinc oxide layer containing a transition metal is located between the semiconductor layer and at least one of the first and second electrodes and the density of the transition metal in the zinc oxide layer is continuously changed within a range of not less than 1 atm. ppm to not more than 5 atm %.

摘要翻译： 具有半导体层的太阳能电池具有将第一电极，半导体层和第二电极堆叠在基板上的结构，其中含有过渡金属的氧化锌层位于半导体层之间，并且至少一个 氧化锌层中的第一电极和第二电极和过渡金属的密度在不小于1个大气压的范围内连续变化。 ppm至不大于5atm％。

公开(公告)号：US5324365A

公开(公告)日：1994-06-28

申请号：US948317

申请日：1992-09-22

申请人： Mitsuyuki Niwa

发明人： Mitsuyuki Niwa

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/022425 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell has a semiconductor layer sandwiched between first and second electrodes, wherein a zinc oxide layer containing carbon atoms, nitrogen atoms, or carbon and nitrogen atoms is located between the semiconductor layer and at least one of the first and second electrodes. The density of carbon atoms, nitrogen atoms, or carbon and nitrogen atoms in the zinc oxide layer is constant or continuously changed within the range of 5 atm % or less.

摘要翻译： 太阳能电池具有夹在第一和第二电极之间的半导体层，其中含有碳原子，氮原子或碳原子和氮原子的氧化锌层位于半导体层与第一和第二电极中的至少一个之间。 氧化锌层中的碳原子，氮原子或碳原子和氮原子的密度在5atm％以下的范围内是恒定的或连续变化的。

公开(公告)号：US20090084500A1

公开(公告)日：2009-04-02

申请号：US12326238

申请日：2008-12-02

申请人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C14/34

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

摘要翻译： 公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置， 由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。 这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

公开(公告)号：US5420043A

公开(公告)日：1995-05-30

申请号：US197875

申请日：1994-02-17

申请人： Mitsuyuki Niwa

发明人： Mitsuyuki Niwa

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell has a semiconductor layer sandwiched between first and second electrodes, wherein a zinc oxide layer containing carbon atoms, nitrogen atoms, or carbon and nitrogen atoms is located between the semiconductor layer and at least one of the first and second electrodes. The density of carbon atoms, nitrogen atoms, or carbon and nitrogen atoms in the zinc oxide layer is constant or continuously changed within the range of 5 atm % or less.

摘要翻译： 太阳能电池具有夹在第一和第二电极之间的半导体层，其中含有碳原子，氮原子或碳原子和氮原子的氧化锌层位于半导体层与第一和第二电极中的至少一个之间。 氧化锌层中的碳原子，氮原子或碳原子和氮原子的密度在5atm％以下的范围内是恒定的或连续变化的。

公开(公告)号：US5371380A

公开(公告)日：1994-12-06

申请号：US188731

申请日：1994-01-31

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/16 ,  H01L29/26 ,  H01L45/00

CPC分类号： H01L29/1604 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/263

摘要： A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.

摘要翻译： 含有选自硅原子（Si）和锗原子（Ge）作为基体的至少一种原子的非单晶半导体，以及选自氢原子中的至少一种原子（ H）和卤素原子（X），其中所述非单晶半导体的平均半径为3.5AANG或更小，密度为1×1019（cm-3）或更小，对于其中包含的微孔。 非单晶半导体具有优异的半导体特性和与其他材料的粘合性，并且可以有效地用作各种半导体器件的组成元件。

公开(公告)号：US5563425A

公开(公告)日：1996-10-08

申请号：US149749

申请日：1993-11-10

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L29/04 ,  H01L31/36 ,  H01L31/376

CPC分类号： H01L31/065 ,  H01L31/056 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： An object of the present invention is to provide a photoelectrical conversion device in which recombination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.

摘要翻译： 本发明的目的是提供一种光电转换装置，其中防止由光激发的载流子的复合，并且改善了空穴的开路电压和载流子范围，并提供了使用光电转换装置的发电系统。 所述光电转换装置包括p层，i层和n层，其中所述光电转换装置通过层叠p层，i层和n层而形成，所述p层，i层和n层由 非单晶硅半导体，i层含有锗原子，i层的带隙在i层的厚度方向上平滑地变化，带隙的最小值位于 i层的中心位置的p层和作为供体的价电子控制剂以及用作受体的另一价电子控制剂都掺杂到i层中。 此外，p层或n层中的至少任一层形成为由主要由周期表的III族元素和/或其V族元素组成的层和包含该价电子层的层 控制剂主要由硅原子组成。

公开(公告)号：US5418680A

公开(公告)日：1995-05-23

申请号：US155655

申请日：1993-11-22

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H05F7/00

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An apparatus for repairing a defective semiconductor device having an electrically short-circuited portion, wherein the semiconductor device includes a semiconductor thin film and a conductive thin film disposed in the named order on a conductive surface of a substrate and in which the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion so that the semiconductor device is defective. The apparatus includes a substrate holding unit for holding the substrate of the defective semiconductor device and an electrode arranged above the substrate holding unit so that, when the defective semiconductor is positioned on the substrate holding unit, there is a predetermined distance between the electrode and the conductive thin film of the defective semiconductor device, the electrode being capable of moving in relation to the substrate of the defective semiconductor device. The apparatus further includes a voltage applying unit for applying a desired voltage to the electrode, wherein discharge is caused between the electrode and the conductive thin film of the defective semiconductor device by applying a desired voltage to the electrode through the voltage applying means to thereby modify a region of the conductive thin film of the defective semiconductor device in electrical contact with the conductive surface of the substrate of the defective semiconductor device.

摘要翻译： 一种用于修复具有电短路部分的有缺陷的半导体器件的装置，其中所述半导体器件包括半导体薄膜和导电薄膜，所述半导体薄膜和导电薄膜按照所述顺序设置在衬底的导电表面上，并且其中导电薄膜和 衬底的导电表面在发生在半导体薄膜中的针孔处电短路以形成电短路部分，使得半导体器件有缺陷。 该装置包括用于保持有缺陷的半导体器件的衬底的衬底保持单元和布置在衬底保持单元上方的电极，使得当缺陷半导体位于衬底保持单元上时，电极和 有缺陷的半导体器件的导电薄膜，电极能够相对于有缺陷的半导体器件的衬底移动。 该装置还包括用于向电极施加期望电压的电压施加单元，其中通过施加期望的电压通过电压施加装置在电极和缺陷半导体器件的导电薄膜之间引起放电，从而修改 所述有缺陷的半导体器件的导电薄膜的区域与有缺陷的半导体器件的衬底的导电表面电接触。

公开(公告)号：US5417770A

公开(公告)日：1995-05-23

申请号：US81222

申请日：1993-06-25

申请人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23C16/517 ,  C30B25/02 ,  C30B25/16 ,  G03G5/082 ,  H01L21/205 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/076 ,  C23C16/517 ,  G03G5/08264 ,  G03G5/08278 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78603 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

摘要翻译： 一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。 通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。 在能量上比微波能量高的同时施加RF能量。 微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。