公开(公告)号：US07264677B2

公开(公告)日：2007-09-04

申请号：US11252786

申请日：2005-10-19

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： C23G1/00

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

摘要翻译： 钌，锇及其氧化物可以通过向金属及其氧化物之间的金属及其氧化物之间的催化提供原子供氧气体（通常为臭氧），并且通过臭氧对晶片和反应器没有任何损害来简单而快速地进行蚀刻 并且催化剂不仅用于蚀刻而且还用于室清洁，确保反应堆的稳定运行和高品质装置的生产。

公开(公告)号：US20060037627A1

公开(公告)日：2006-02-23

申请号：US11252786

申请日：2005-10-19

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： C23G1/00

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

公开(公告)号：US06613242B2

公开(公告)日：2003-09-02

申请号：US09983209

申请日：2001-10-23

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： H01L21461

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

公开(公告)号：US06537461B1

公开(公告)日：2003-03-25

申请号：US09556319

申请日：2000-04-24

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： C23F400

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

摘要翻译： 钌，锇及其氧化物可以通过向金属及其氧化物之间的金属及其氧化物之间的催化提供原子供氧气体（通常为臭氧），并且通过臭氧对晶片和反应器没有任何损害来简单而快速地进行蚀刻 并且催化剂不仅用于蚀刻而且还用于室清洁，确保反应堆的稳定运行和高品质装置的生产。

公开(公告)号：US07025896B2

公开(公告)日：2006-04-11

申请号：US10460260

申请日：2003-06-13

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： C23F1/00

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

公开(公告)号：US06607988B2

公开(公告)日：2003-08-19

申请号：US09749554

申请日：2000-12-28

申请人： Takashi Yunogami ,  Yoshitaka Nakamura ,  Kazuo Nojiri ,  Sukeyoshi Tsunekawa ,  Toshiyuki Arai ,  Miwako Nakahara ,  Shigeru Ohno ,  Tomonori Saeki ,  Masaru Izawa

发明人： Takashi Yunogami ,  Yoshitaka Nakamura ,  Kazuo Nojiri ,  Sukeyoshi Tsunekawa ,  Toshiyuki Arai ,  Miwako Nakahara ,  Shigeru Ohno ,  Tomonori Saeki ,  Masaru Izawa

IPC分类号： H01L21302

CPC分类号： H01L28/65 ,  C23F4/00 ,  H01L21/32136 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/91

摘要： With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.

摘要翻译： 为了提供使用光致抗蚀剂作为蚀刻掩模对Ru（钌）进行高选择性蚀刻的技术，覆盖沉积在孔的侧壁和底表面上的下电极材料的Ru膜被覆盖 与光致抗蚀剂膜接触，然后在含有臭氧气体的气体气氛中进行各向同性的干法蚀刻，由此除去孔外部的Ru膜的一部分。

公开(公告)号：US06664184B2

公开(公告)日：2003-12-16

申请号：US10175471

申请日：2002-06-18

申请人： Miwako Nakahara ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： H01L214763

CPC分类号： H01L21/32135 ,  H01L28/65

摘要： A pretreatment in which impurities containing carbon are removed from a conductor film formed on a substrate is performed prior to an etching treatment of the conductor film. In this pretreatment, a gas containing oxygen, nitrogen, or a nitrogen oxide is irradiated with ultraviolet rays or electromagnetic waves, and this gas is supplied to the substrate surface, which has been heated to a temperature of 200° C. or lower. This allows a semiconductor device having at least one type of conductor film selected from among a ruthenium film, a ruthenium oxide film, an osmium film, and an osmium oxide film to be manufactured inexpensively and at a high level of quality.

摘要翻译： 在对导体膜进行蚀刻处理之前，进行从形成在基板上的导体膜除去含有碳的杂质的预处理。 在该预处理中，用紫外线或电磁波照射含有氧，氮或氮氧化物的气体，并将该气体供给到加热到200℃以下的温度的基板表面。 这允许廉价且高品质地制造具有选自钌膜，氧化钌膜，锇膜和氧化锇膜中的至少一种导体膜的半导体器件。

公开(公告)号：US06326218B1

公开(公告)日：2001-12-04

申请号：US09575442

申请日：2000-05-22

申请人： Takashi Yunogami ,  Kazuo Nojiri ,  Yuzuru Ohji ,  Sukeyoshi Tsunekawa ,  Masahiko Hiratani ,  Yuichi Matsui

发明人： Takashi Yunogami ,  Kazuo Nojiri ,  Yuzuru Ohji ,  Sukeyoshi Tsunekawa ,  Masahiko Hiratani ,  Yuichi Matsui

IPC分类号： H01G706

CPC分类号： H01L27/105 ,  H01L21/32139 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/60

摘要： Described is a manufacturing method of an integrated circuit which uses a thin film such as platinum or BST as a hard mask upon patterning ruthenium or the like, thereby making it possible to form a device without removing the hard mask. In addition, the invention method makes it possible to interpose a protecting film such as platinum in order to prevent, upon removing a resist used for the patterning of the hard mask, an underlying ruthenium film or the like from being damaged.

摘要翻译： 描述了在图案化钌等上使用诸如铂或BST之类的薄膜作为硬掩模的集成电路的制造方法，从而可以在不去除硬掩模的情况下形成器件。 另外，本发明的方法可以插入诸如铂的保护膜，以便在去除用于图案化硬掩模的抗蚀剂时，下面的钌膜等被损坏。

公开(公告)号：US06451665B1

公开(公告)日：2002-09-17

申请号：US09459343

申请日：1999-12-13

申请人： Takashi Yunogami ,  Kazuo Nojiri ,  Yuzuru Ohji ,  Sukeyoshi Tsunekawa ,  Masahiko Hiratani ,  Yuichi Matsui

发明人： Takashi Yunogami ,  Kazuo Nojiri ,  Yuzuru Ohji ,  Sukeyoshi Tsunekawa ,  Masahiko Hiratani ,  Yuichi Matsui

IPC分类号： H01L2120

CPC分类号： H01L27/105 ,  H01L21/32139 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/60

摘要： Described is a manufacturing method of an integrated circuit which uses a thin film such as platinum or BST as a hard mask upon patterning ruthenium or the like, thereby making it possible to form a device without removing the hard mask. In addition, the invention method makes it possible to interpose a protecting film such as platinum in order to prevent, upon removing a resist used for the patterning of the hard mask, an underlying ruthenium film or the like from being damaged.

摘要翻译： 描述了在图案化钌等上使用诸如铂或BST之类的薄膜作为硬掩模的集成电路的制造方法，从而可以在不去除硬掩模的情况下形成器件。 另外，本发明的方法可以插入诸如铂的保护膜，以便在去除用于图案化硬掩模的抗蚀剂时，下面的钌膜等被损坏。

公开(公告)号：US4717462A

公开(公告)日：1988-01-05

申请号：US922892

申请日：1986-10-24

申请人： Yoshio Homma ,  Sukeyoshi Tsunekawa ,  Shunji Sasabe

发明人： Yoshio Homma ,  Sukeyoshi Tsunekawa ,  Shunji Sasabe

IPC分类号： C23C14/34 ,  C23C14/04 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/046

摘要： A sputtering apparatus comprising an intermediate electrode having a plurality of openings disposed between a cathode and a substrate electrode.The directionality of the particles which are liberated from a target by the collision of ions against the target is made remarkably uniform by the presence of the intermediate electrode, and thus a thin film having a superior step coverage can be deposited on the substrate placed on the substrate electrode.

摘要翻译： 一种溅射装置，包括具有设置在阴极和基板电极之间的多个开口的中间电极。 通过中间电极的存在，通过离子与靶碰撞而从靶中释放的颗粒的方向性被显着地均匀化，因此具有优异的台阶覆盖率的薄膜可以沉积在放置在基板上的基板上 基板电极。