公开(公告)号：US07476617B2

公开(公告)日：2009-01-13

申请号：US11361526

申请日：2006-02-24

申请人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

发明人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/76843 ,  H01L21/76867 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

公开(公告)号：US20090146306A1

公开(公告)日：2009-06-11

申请号：US12316766

申请日：2008-12-16

申请人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

发明人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

IPC分类号： H01L23/48

CPC分类号： H01L21/28518 ,  H01L21/76843 ,  H01L21/76867 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

摘要翻译： 本发明涉及具有C49相位的外延生长硅化钛层的半导体器件及其制造方法。 该钛硅化物层具有不会使钛层的相变化的规定的界面能，因此能够防止钛层的凝聚和切槽现象的发生。 半导体器件包括：硅层; 形成在所述硅层上的绝缘层，其中所述绝缘层的部分部分被打开以形成暴露所述硅层的部分部分的接触孔; 外延生长的硅化钛层，其具有C49相，并且形成在设置在接触孔内的暴露的硅衬底上; 以及形成在所述硅化钛层的上表面上的金属层。

公开(公告)号：US20060157742A1

公开(公告)日：2006-07-20

申请号：US11361526

申请日：2006-02-24

申请人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

发明人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

IPC分类号： H01L29/76 ,  H01L29/745

CPC分类号： H01L21/28518 ,  H01L21/76843 ,  H01L21/76867 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

公开(公告)号：US07868458B2

公开(公告)日：2011-01-11

申请号：US12316766

申请日：2008-12-16

申请人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

发明人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

IPC分类号： H01L23/48

CPC分类号： H01L21/28518 ,  H01L21/76843 ,  H01L21/76867 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

摘要翻译： 本发明涉及具有C49相位的外延生长硅化钛层的半导体器件及其制造方法。 该钛硅化物层具有不会改变钛层的相的预定的界面能，因此可以防止钛层的凝聚现象和切槽现象。 半导体器件包括：硅层; 形成在所述硅层上的绝缘层，其中所述绝缘层的部分部分被打开以形成暴露所述硅层的部分部分的接触孔; 外延生长的硅化钛层，其具有C49相，并且形成在设置在接触孔内的暴露的硅衬底上; 以及形成在所述硅化钛层的上表面上的金属层。

公开(公告)号：US07037827B2

公开(公告)日：2006-05-02

申请号：US10749878

申请日：2003-12-30

申请人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

发明人： Moon-Keun Lee ,  Tae-Kwon Lee ,  Jun-Mo Yang ,  Tae-Su Park ,  Yoon-Jik Lee

IPC分类号： H01L21/4763

CPC分类号： H01L21/28518 ,  H01L21/76843 ,  H01L21/76867 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.

摘要翻译： 具有外延生长的C49相的硅化钛层的半导体器件及其制造方法。 钛硅化物层具有不会使钛层的相变化的预定的界面能，因此可以防止钛层的凝聚和沟槽现象的发生。 半导体器件包括：硅层; 形成在所述硅层上的绝缘层，其中所述绝缘层的部分部分被打开以形成暴露所述硅层的部分部分的接触孔。 外延生长的硅化钛层，其相位为C49，并形成在设置在接触孔内的暴露的硅衬底上; 并且在硅化钛层的上表面上形成金属层。