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Patent Agency Ranking
1.发明授权Methods of forming ferroelectric capacitors with metal oxide for inhibiting fatigue 失效用金属氧化物形成铁电电容器以抑制疲劳的方法公开(公告)号：US06872618B2
公开(公告)日：2005-03-29
申请号：US10464993
申请日：2003-06-19
Applicant: Moon-sook Lee , Kun-sang Park
Inventor： Moon-sook Lee , Kun-sang Park
IPC: H01L27/108 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/115 , H01L21/8239
CPC classification number: H01L28/56 , H01L21/31683 , H01L27/10814 , H01L27/11502 , H01L27/11507 , H01L28/60
Abstract: A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.
Abstract translation: 形成铁电电容器的方法包括在基板上形成下电极。 下电极被氧化以形成金属氧化物膜。 在金属氧化物膜上形成铁电体膜，同时抑制金属氧化物膜的氧含量的降低。 在铁电体膜上形成上部电极。
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公开(公告)号：US06987308B2
公开(公告)日：2006-01-17
申请号：US11009809
申请日：2004-12-10
Applicant: Moon-sook Lee , Kun-sang Park
Inventor： Moon-sook Lee , Kun-sang Park
IPC: H01L29/72
CPC classification number: H01L28/56 , H01L21/31683 , H01L27/10814 , H01L27/11502 , H01L27/11507 , H01L28/60
Abstract: A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.
Abstract translation: 形成铁电电容器的方法包括在基板上形成下电极。 下电极被氧化以形成金属氧化物膜。 在金属氧化物膜上形成铁电体膜，同时抑制金属氧化物膜的氧含量的降低。 在铁电体膜上形成上部电极。
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公开(公告)号：US20050106761A1
公开(公告)日：2005-05-19
申请号：US11009809
申请日：2004-12-10
Applicant: Moon-sook Lee , Kun-sang Park
Inventor： Moon-sook Lee , Kun-sang Park
IPC: H01L27/108 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/115 , H01L21/00 , H01L29/94 , H01L31/113 , H01L21/8242 , H01L29/76 , H01L31/119 , H01L31/062
CPC classification number: H01L28/56 , H01L21/31683 , H01L27/10814 , H01L27/11502 , H01L27/11507 , H01L28/60
Abstract: A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.
Abstract translation: 形成铁电电容器的方法包括在基板上形成下电极。 下电极被氧化以形成金属氧化物膜。 在金属氧化物膜上形成铁电体膜，同时抑制金属氧化物膜的氧含量的降低。 在铁电体膜上形成上部电极。
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4.发明申请Vapor deposition systems having separate portions configured for purging using different materials 审中-公开蒸气沉积系统具有被配置为使用不同材料进行吹扫的分离部分公开(公告)号：US20060231026A1
公开(公告)日：2006-10-19
申请号：US11453412
申请日：2006-06-15
Applicant: Moon-sook Lee , Byoung-jae Bae
Inventor： Moon-sook Lee , Byoung-jae Bae
IPC: C23C16/00
CPC classification number: C23C16/45565 , C23C16/4402 , C23C16/4408 , C23C16/45574
Abstract: A vapor deposition system can include a first portion of the vapor deposition system that is configured to be purged using a first material and a second portion that is configured to be purged using a second material. Related methods are also disclosed.
Abstract translation: 气相沉积系统可以包括蒸气沉积系统的第一部分，其被配置为使用第一材料进行清洗，第二部分被配置为使用第二材料进行吹扫。 还公开了相关方法。
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5.发明申请Vapor deposition systems having separate portions configured for purging using different materials and methods of operating same 审中-公开蒸气沉积系统具有被配置为使用不同材料进行吹扫的分离部分和操作相同的方法公开(公告)号：US20050011444A1
公开(公告)日：2005-01-20
申请号：US10855851
申请日：2004-05-27
Applicant: Moon-sook Lee , Byoung-jae Bae
Inventor： Moon-sook Lee , Byoung-jae Bae
IPC: H01L21/205 , C23C16/44 , C23C16/455 , C23C16/00
CPC classification number: C23C16/45565 , C23C16/4402 , C23C16/4408 , C23C16/45574
Abstract: A vapor deposition system can include a first portion of the vapor deposition system that is configured to be purged using a first material and a second portion that is configured to be purged using a second material. Related methods are also disclosed.
Abstract translation: 气相沉积系统可以包括蒸气沉积系统的第一部分，其被配置为使用第一材料进行清洗，第二部分被配置为使用第二材料进行吹扫。 还公开了相关方法。
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