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    Semiconductor laser array device
    1.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号：US4903274A

    公开(公告)日：1990-02-20

    申请号：US195742

    申请日：1988-05-18

    申请人： Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Sadayoshi Matsui ,  Hiroyuki Hosoba

    发明人： Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Sadayoshi Matsui ,  Hiroyuki Hosoba

    IPC分类号： H01S5/40

    CPC分类号： H01S5/4068

    摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.

    摘要翻译： 一种半导体激光器阵列器件，包括具有多个沟槽的衬底和设置在衬底上的有源层，从而产生与沟槽对应的有源层内的光波导，其中沟槽设置在衬底的整个区域上， 用于防止将电流注入到位于基板的中心区域外部的一些凹槽中，由此位于基板的中心区域中的其它凹槽构成半导体激光器阵列器件的激光器阵列部分。

    Semiconductor laser array device
    6.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号：US4856015A

    公开(公告)日：1989-08-08

    申请号：US203469

    申请日：1988-06-07

    申请人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba

    发明人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hiroyuki Hosoba

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/40

    CPC分类号： H01S5/02461 ,  H01L24/32 ,  H01S5/02 ,  H01S5/4068 ,  H01L2924/12042

    摘要： A semiconductor laser array device has a relatively wide light-emitting area with many semiconductor lasers and a shielding layer selectively disposed with respect to peripheral regions of the light-emitting area such that the rate of heat emission from the center part can be increased relative to that from the peripheral regions. Temperature distribution on the light-emitting area can thus be made uniform and laser light can be emitted from the entire laser emitting area under a phase-synchronized condition.

    摘要翻译： 半导体激光器阵列器件具有相当宽的发光面积，具有许多半导体激光器和相对于发光区域的周边区域选择性地布置的屏蔽层，使得来自中心部分的热发射速率可以相对于 来自周边地区。 因此，在相位同步状态下，可以使发光区域的温度分布均匀，从整个激光发射区域发射激光。

    Semiconductor laser array device
    8.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号：US4811351A

    公开(公告)日：1989-03-07

    申请号：US35477

    申请日：1987-04-07

    申请人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hidenori Kawanishi

    发明人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hidenori Kawanishi

    IPC分类号： H01S5/00 ,  G02B6/122 ,  H01S5/028 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/028 ,  G02B6/122 ,  H01S5/4068

    摘要： A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.

    摘要翻译： 一种半导体激光器阵列器件，包括衬底; 位于所述基板上的折射率波导区域; 傅里叶变换区域，其邻近所述波导区域，并且其中来自所述波导区域的同步相位发射的激光经历傅里叶变换，位于所述基板上; 以及反射镜，其与所述傅立叶变换区域相邻，并且所述经转换的0°相移模式的激光被选择性地反射以入射到所述波导区域。

    Semiconductor laser array device
    9.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号：US4742526A

    公开(公告)日：1988-05-03

    申请号：US816311

    申请日：1986-01-06

    申请人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto

    发明人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto

    IPC分类号： G02B6/28 ,  H01S5/40 ,  H01S3/19 ,  H01S3/082 ,  H01S3/13

    CPC分类号： G02B6/2804 ,  H01S5/4068

    摘要： A semiconductor laser array device comprising an optical waveguide which is in a single mode or a multiple mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form a plurality of branching waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser beams and which are parallel to each other near the facets, thereby oscillating laser beams with a 0.degree.-phase shift therebetween.

    摘要翻译： 一种半导体激光器阵列器件，包括在其中心部分处于单一模式或多模式的光波导，并且在其两端部分别处于分支模式，以形成多个分支波导，该分支波导相对于 到激光束的波导方向，并且在面附近彼此平行，从而在其间振荡激光束0°相移。

    Process for preventing melt-back in the production of aluminum-containing laser devices
    10.
    发明授权
    Process for preventing melt-back in the production of aluminum-containing laser devices 失效
    制造含铝激光装置时防止熔融回收的方法

    公开(公告)号：US4632709A

    公开(公告)日：1986-12-30

    申请号：US781707

    申请日：1985-09-30

    申请人： Mototaka Taneya ,  Sadayoshi Matsui ,  Mitsuhiro Matsumoto ,  Hiroshi Hayashi

    发明人： Mototaka Taneya ,  Sadayoshi Matsui ,  Mitsuhiro Matsumoto ,  Hiroshi Hayashi

    IPC分类号： H01L21/20 ,  H01L21/208 ,  H01S5/00

    CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

    摘要： A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.

    摘要翻译： 一种制造半导体器件的方法包括：（1）在包含铝的第一半导体层上形成不含铝的薄半导体膜，所述第一半导体层设置在基板上一个或多个（2）在所述薄半导体膜上形成沟槽， 通道或通道到达或穿过所述第一半导体层以暴露所述衬底的一部分，导致用于在其上继续晶体生长的沟道衬底，以及（3）通过使用在所述沟道衬底上的外延生长晶体层产生 具有足够高以防止所述第一半导体层经历回熔的过饱和度的晶体生长溶液。