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公开(公告)号：US5457561A
公开(公告)日：1995-10-10
申请号：US101080
申请日：1993-08-04
申请人： Mototaka Taneya , Seiki Yano , Haruhisa Takiguchi , Atsushi Shimonaka , Tatsuya Morioka , Hidenori Kawanishi
发明人： Mototaka Taneya , Seiki Yano , Haruhisa Takiguchi , Atsushi Shimonaka , Tatsuya Morioka , Hidenori Kawanishi
IPC分类号： H04B10/61 , H04B10/079 , H04B10/11 , H04B10/116 , H04B10/293 , H04B10/516 , H04B10/556 , H04B10/564 , H04B10/572 , H04B10/00
CPC分类号： H04B10/1121
摘要： A system for transmitting information with a coherent beam being propagatable in the air is arranged to include a transmitting device having a modulator and an emitting circuit and a receiving device having a generator, a mixer, a frequency discriminating circuit, and reproducing circuit. The modulator modulates a reference light frequency (wavelength) or phase of a coherent beam to be emitted from a light source according to the signal. The emitting circuit emits the modulated beam as a divergent beam having such a power density as being safe to human eyes. The generator generates a coherent locally oscillated beam. The mixer mixes the signal beam with the locally oscillated beam and photoelectric-converts the mixed beam. The frequency discriminating circuit frequency-discriminates the a.c. component of the photoelectric-converted output. The reproducing circuit reproduces a signal from the output of frequency discriminating circuit. Any one of the transmitting device and the receiving device has a function of keeping a relative light frequency difference (wavelength difference) between the signal beam and the locally oscillated beam constant.
摘要翻译： 用于在空气中传播的相干光束传输信息的系统被布置成包括具有调制器和发射电路的发射装置和具有发生器，混频器，鉴频电路和再现电路的接收装置。 调制器根据信号调制要从光源发射的相干光束的参考光频率（波长）或相位。 发射电路发射调制束作为具有对人眼安全的功率密度的发散光束。 发生器产生相干局部振荡光束。 混合器将信号光束与局部振荡光束混合，并对混合光束进行光电转换。 频率鉴别电路对a.c.进行频率鉴别。 光电转换输出的分量。 再现电路从频率鉴别电路的输出再现信号。 发送装置和接收装置中的任一个具有保持信号光束与局部振荡光束之间的相对光频差（波长差）恒定的功能。
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公开(公告)号：US4694461A
公开(公告)日：1987-09-15
申请号：US700018
申请日：1985-02-08
申请人： Seiki Yano , Saburo Yamamoto , Sadayoshi Matsui , Mototaka Taneya
发明人： Seiki Yano , Saburo Yamamoto , Sadayoshi Matsui , Mototaka Taneya
CPC分类号： H01S5/4031 , H01S5/2231
摘要： A semiconductor laser array includes a p-GaAs substrate, a p-Ga.sub.1-x Al.sub.x As cladding layer, a Ga.sub.1-y Al.sub.y As active layer, an n-Ga.sub.1-z Al.sub.z As optical guide layer, an n-Ga.sub.1-x Al.sub.x As cladding layer and an n-GaAs cap layer formed by the liquid phase epitaxial growth method. A plurality of stripe shaped grooves are formed in the surface of the n-GaAs cap layer so that the bottom of the groove reaches the intermediate of the n-Ga.sub.1-z Al.sub.z As optical guide layer. A Ga.sub.1-b Al.sub.b As high resistance layer is filled in the plurality of stripe shaped grooves so that injecting current is divided into a plurality of paths, and each laser emitting region is optically, phase coupled to each other with a phase difference of zero degree.
摘要翻译： 半导体激光器阵列包括p-GaAs衬底，p-Ga1-xAlxAs包层，Ga1-yAlyAs有源层，n-Ga1-zAlzAs光导层，n-Ga1-xAlxAs覆层和n-GaAs 盖层由液相外延生长法形成。 在n-GaAs覆盖层的表面上形成多个条状槽，使得槽的底部到达n-Ga1-zAlzAs光导层的中间。 GaI-bAlbAs高电阻层填充在多个条形槽中，使得注入电流被分成多个路径，并且每个激光发射区域以0度的相位差彼此光学地相互耦合。
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公开(公告)号：US4747109A
公开(公告)日：1988-05-24
申请号：US881096
申请日：1986-07-02
CPC分类号： H01S5/10 , H01S5/4031
摘要： The laser device has a plurality of parallel index-waveguides. The intermediate regions of the waveguides are at an angle of inclination from a line perpendicular to each of both facets of the laser device. The ends of the waveguides are oriented orthogonally to the facets of the laser device.
摘要翻译： 激光装置具有多个平行的折射率波导。 波导的中间区域与垂直于激光装置的两个面的每个面的线倾斜成一定角度。 波导的端部与激光器件的刻面正交定向。
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公开(公告)号：US4768201A
公开(公告)日：1988-08-30
申请号：US760538
申请日：1985-07-30
申请人： Mototaka Taneya , Sadayoshi Matsui , Seiki Yano , Saburo Yamamoto
发明人： Mototaka Taneya , Sadayoshi Matsui , Seiki Yano , Saburo Yamamoto
CPC分类号： H01S5/4068
摘要： A semiconductor laser array which includes a plurality of active wave guide in a substantially parallel manner disposed on first and second laser opposing laser facets so as to be optically coupled and so that adjacent wave guides converse into one or more active wave guides on an opposing laser facet. The laser array exhibits stable operations and a high output power in a single narrow beam. The active wave guides have identical vertical modes and a phase difference of zero degrees.
摘要翻译： 一种半导体激光器阵列，其包括大致平行的多个有源波导，该多个有源波导布置在第一和第二激光相对的激光刻面上，以便光学耦合，并使得相邻的波导相对于相对激光器上的一个或多个有源波导 方面 激光器阵列在单个窄光束中表现出稳定的操作和高输出功率。 有源波导具有相同的垂直模式和零度的相位差。
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公开(公告)号：US4817104A
公开(公告)日：1989-03-28
申请号：US795525
申请日：1985-11-06
CPC分类号： H01S5/4031 , H01S5/10
摘要： A semiconductor laser array device comprising a structure for minimizing the dependence of the longitudinal mode of laser oscillation upon the driving electric current, thereby facilitating laser light oscillation at a high output power with a zero degrees phase shift between adjacent lasing elements.
摘要翻译： 一种半导体激光器阵列器件，包括用于最小化激光振荡的纵向模式对驱动电流的依赖性的结构，从而促进在相邻的激光元件之间具有零度相移的高输出功率下的激光振荡。
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公开(公告)号：US4730326A
公开(公告)日：1988-03-08
申请号：US773966
申请日：1985-09-09
CPC分类号： H01S5/4031
摘要： A semiconductor laser array device comprising a plurality of index-guided lasing filaments formed in an active layer in a parallel manner, and an electrical current injection portion formed on the upper face of grown layers therefor the flat shape of the electrical current injection portion is asymmetrical with respect to any line which is parallel to the lasing filaments.
摘要翻译： 一种半导体激光器阵列器件，包括以平行方式形成在有源层中的多个折射率引导的激光长丝，以及形成在生长层的上表面上的电流注入部分，电流注入部分的平坦形状是不对称的 相对于与激光丝平行的任何线。
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7.发明授权
公开(公告)号：US4858215A
公开(公告)日：1989-08-15
申请号：US95566
申请日：1987-09-10
CPC分类号： G11B7/1384 , G11B7/0912 , G11B7/124
摘要： An integrated optical disc pickup comprising an optical waveguide in the form of a insulation layer provided on the surface of a substrate, a semiconductor laser disposed outside the waveguide, a beam splitter of the transmission type and a Luneburg lens provided on the path of propagation of a laser beam from the semiconductor laser through the waveguide and arranged in the order mentioned in a direction away from the laser, a transmission grating provided on the path through the waveguide to be followed by the laser beam upon having its direction changed by the beam splitter after emanating from the laser, passing through the beam splitter and the Luneburg lens, being reflected from an optical disc disposed outside the waveguide and passing through the Luneburg lens, and first and second photodetectors disposed on the paths of propagation through the waveguide of two portions of the laser beam divided by the diffraction grating.
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公开(公告)号：US4712219A
公开(公告)日：1987-12-08
申请号：US716222
申请日：1985-03-26
CPC分类号： H01S5/32325 , H01S5/24 , H01S5/0206
摘要： A visible double heterostructure-semiconductor laser comprising an InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer, a first cladding layer on the InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer; an active layer on the first cladding layer and a second cladding layer on the active layer, wherein a mixed crystal of, respectively InGaAs, InAlP, InAlAs, InAlSb or InGaSb is used, as a substrate crystal for growing of said InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer thereon, and the composition ratio of the substrate crystal and of each of the layers is selected so as to result in the approximate coincidence between the lattice constant of the substrate crystal and the lattice constant of each of these layers, an energy difference of 0.2 eV or more between the direct transition and the indirect transition within said active layer, and an energy difference of 0.2 eV or more between the active layer and either of the first or the second cladding layers.
摘要翻译： 包括InGaAs，InAlP，InAlAs，InAlSb或InGaSb层的可见双异质结构半导体激光器，InGaAs，InAlP，InAlAs，InAlSb或InGaSb层中的第一包层; 在第一包层上的有源层和有源层上的第二包层，其中使用分别为InGaAs，InAlP，InAlAs，InAlSb或InGaSb的混晶，作为用于生长所述InGaAs，InAlP，InAlAs的衬底晶体 ，InAlSb或InGaSb层，并且选择基板晶体和各层的组成比，从而导致基板晶体的晶格常数和这些层的晶格常数之间的近似一致， 所述有源层内的直接跃迁和间接跃迁之间的能量差为0.2eV以上，并且在有源层与第一或第二覆层中的任一层之间的能量差为0.2eV以上。
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公开(公告)号：US5345460A
公开(公告)日：1994-09-06
申请号：US939901
申请日：1992-09-04
申请人： Haruhisa Takiguchi , Seiki Yano , Kazuhiko Inoguchi , Hiroaki Kudo , Chitose Nakanishi , Toshiyuki Okumura , Satoshi Sugahara
发明人： Haruhisa Takiguchi , Seiki Yano , Kazuhiko Inoguchi , Hiroaki Kudo , Chitose Nakanishi , Toshiyuki Okumura , Satoshi Sugahara
CPC分类号： H01S5/164 , H01S5/2004
摘要： A semiconductor laser device with window regions according to the present invention is provided, in which a double hetero structure including cladding layers and an active layer sandwiched by the cladding layers is formed on a semiconductor substrate, the double hetero structure is buried in burying layers with a bandgap larger than that of the active layer, and the burying layers form window regions situated at both end facets of the double hetero structure, wherein the window regions have a waveguide structure including a plurality of semiconductor layers with different bandgaps.
摘要翻译： 提供了根据本发明的具有窗口区域的半导体激光器件，其中在半导体衬底上形成包括包层和被包覆层夹持的有源层的双异质结构，将该双异质结构埋在具有 具有比有源层大的带隙，并且掩埋层形成位于双异质结构的两端面处的窗口区域，其中窗口区域具有包括具有不同带隙的多个半导体层的波导结构。
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10.发明授权Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film 失效半导体激光装置具有设置在小面和保护膜之间的含硫膜
公开(公告)号：US5208468A
公开(公告)日：1993-05-04
申请号：US727375
申请日：1991-07-05
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译： 公开了从小面发射激光的半导体激光器件。 半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和 保护膜。
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