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公开(公告)号：US4747109A
公开(公告)日：1988-05-24
申请号：US881096
申请日：1986-07-02
CPC分类号： H01S5/10 , H01S5/4031
摘要： The laser device has a plurality of parallel index-waveguides. The intermediate regions of the waveguides are at an angle of inclination from a line perpendicular to each of both facets of the laser device. The ends of the waveguides are oriented orthogonally to the facets of the laser device.
摘要翻译： 激光装置具有多个平行的折射率波导。 波导的中间区域与垂直于激光装置的两个面的每个面的线倾斜成一定角度。 波导的端部与激光器件的刻面正交定向。
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公开(公告)号：US4817104A
公开(公告)日：1989-03-28
申请号：US795525
申请日：1985-11-06
CPC分类号： H01S5/4031 , H01S5/10
摘要： A semiconductor laser array device comprising a structure for minimizing the dependence of the longitudinal mode of laser oscillation upon the driving electric current, thereby facilitating laser light oscillation at a high output power with a zero degrees phase shift between adjacent lasing elements.
摘要翻译： 一种半导体激光器阵列器件，包括用于最小化激光振荡的纵向模式对驱动电流的依赖性的结构，从而促进在相邻的激光元件之间具有零度相移的高输出功率下的激光振荡。
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公开(公告)号：US4730326A
公开(公告)日：1988-03-08
申请号：US773966
申请日：1985-09-09
CPC分类号： H01S5/4031
摘要： A semiconductor laser array device comprising a plurality of index-guided lasing filaments formed in an active layer in a parallel manner, and an electrical current injection portion formed on the upper face of grown layers therefor the flat shape of the electrical current injection portion is asymmetrical with respect to any line which is parallel to the lasing filaments.
摘要翻译： 一种半导体激光器阵列器件，包括以平行方式形成在有源层中的多个折射率引导的激光长丝，以及形成在生长层的上表面上的电流注入部分，电流注入部分的平坦形状是不对称的 相对于与激光丝平行的任何线。
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公开(公告)号：US4694461A
公开(公告)日：1987-09-15
申请号：US700018
申请日：1985-02-08
申请人： Seiki Yano , Saburo Yamamoto , Sadayoshi Matsui , Mototaka Taneya
发明人： Seiki Yano , Saburo Yamamoto , Sadayoshi Matsui , Mototaka Taneya
CPC分类号： H01S5/4031 , H01S5/2231
摘要： A semiconductor laser array includes a p-GaAs substrate, a p-Ga.sub.1-x Al.sub.x As cladding layer, a Ga.sub.1-y Al.sub.y As active layer, an n-Ga.sub.1-z Al.sub.z As optical guide layer, an n-Ga.sub.1-x Al.sub.x As cladding layer and an n-GaAs cap layer formed by the liquid phase epitaxial growth method. A plurality of stripe shaped grooves are formed in the surface of the n-GaAs cap layer so that the bottom of the groove reaches the intermediate of the n-Ga.sub.1-z Al.sub.z As optical guide layer. A Ga.sub.1-b Al.sub.b As high resistance layer is filled in the plurality of stripe shaped grooves so that injecting current is divided into a plurality of paths, and each laser emitting region is optically, phase coupled to each other with a phase difference of zero degree.
摘要翻译： 半导体激光器阵列包括p-GaAs衬底，p-Ga1-xAlxAs包层，Ga1-yAlyAs有源层，n-Ga1-zAlzAs光导层，n-Ga1-xAlxAs覆层和n-GaAs 盖层由液相外延生长法形成。 在n-GaAs覆盖层的表面上形成多个条状槽，使得槽的底部到达n-Ga1-zAlzAs光导层的中间。 GaI-bAlbAs高电阻层填充在多个条形槽中，使得注入电流被分成多个路径，并且每个激光发射区域以0度的相位差彼此光学地相互耦合。
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公开(公告)号：US4768201A
公开(公告)日：1988-08-30
申请号：US760538
申请日：1985-07-30
申请人： Mototaka Taneya , Sadayoshi Matsui , Seiki Yano , Saburo Yamamoto
发明人： Mototaka Taneya , Sadayoshi Matsui , Seiki Yano , Saburo Yamamoto
CPC分类号： H01S5/4068
摘要： A semiconductor laser array which includes a plurality of active wave guide in a substantially parallel manner disposed on first and second laser opposing laser facets so as to be optically coupled and so that adjacent wave guides converse into one or more active wave guides on an opposing laser facet. The laser array exhibits stable operations and a high output power in a single narrow beam. The active wave guides have identical vertical modes and a phase difference of zero degrees.
摘要翻译： 一种半导体激光器阵列，其包括大致平行的多个有源波导，该多个有源波导布置在第一和第二激光相对的激光刻面上，以便光学耦合，并使得相邻的波导相对于相对激光器上的一个或多个有源波导 方面 激光器阵列在单个窄光束中表现出稳定的操作和高输出功率。 有源波导具有相同的垂直模式和零度的相位差。
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公开(公告)号：US4903274A
公开(公告)日：1990-02-20
申请号：US195742
申请日：1988-05-18
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.
摘要翻译： 一种半导体激光器阵列器件，包括具有多个沟槽的衬底和设置在衬底上的有源层，从而产生与沟槽对应的有源层内的光波导，其中沟槽设置在衬底的整个区域上， 用于防止将电流注入到位于基板的中心区域外部的一些凹槽中，由此位于基板的中心区域中的其它凹槽构成半导体激光器阵列器件的激光器阵列部分。
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公开(公告)号：US4815088A
公开(公告)日：1989-03-21
申请号：US105638
申请日：1987-10-05
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device with a waveguide structure comprising waveguides designed such that the widths thereof gradually increase from the center waveguide to the waveguides positioned at both sides of the array portions.
摘要翻译： 一种具有波导结构的半导体激光器阵列器件，其包括设计成使得其宽度从中心波导逐渐增加到位于阵列部分两侧的波导的波导。
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公开(公告)号：US4811351A
公开(公告)日：1989-03-07
申请号：US35477
申请日：1987-04-07
CPC分类号： H01S5/028 , G02B6/122 , H01S5/4068
摘要： A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.
摘要翻译： 一种半导体激光器阵列器件，包括衬底; 位于所述基板上的折射率波导区域; 傅里叶变换区域，其邻近所述波导区域，并且其中来自所述波导区域的同步相位发射的激光经历傅里叶变换，位于所述基板上; 以及反射镜，其与所述傅立叶变换区域相邻，并且所述经转换的0°相移模式的激光被选择性地反射以入射到所述波导区域。
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公开(公告)号：US4742526A
公开(公告)日：1988-05-03
申请号：US816311
申请日：1986-01-06
CPC分类号： G02B6/2804 , H01S5/4068
摘要： A semiconductor laser array device comprising an optical waveguide which is in a single mode or a multiple mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form a plurality of branching waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser beams and which are parallel to each other near the facets, thereby oscillating laser beams with a 0.degree.-phase shift therebetween.
摘要翻译： 一种半导体激光器阵列器件，包括在其中心部分处于单一模式或多模式的光波导，并且在其两端部分别处于分支模式，以形成多个分支波导，该分支波导相对于 到激光束的波导方向，并且在面附近彼此平行，从而在其间振荡激光束0°相移。
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10.发明授权Process for preventing melt-back in the production of aluminum-containing laser devices 失效制造含铝激光装置时防止熔融回收的方法
公开(公告)号：US4632709A
公开(公告)日：1986-12-30
申请号：US781707
申请日：1985-09-30
IPC分类号： H01L21/20 , H01L21/208 , H01S5/00
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02625 , H01L21/02628
摘要： A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.
摘要翻译： 一种制造半导体器件的方法包括：（1）在包含铝的第一半导体层上形成不含铝的薄半导体膜，所述第一半导体层设置在基板上一个或多个（2）在所述薄半导体膜上形成沟槽， 通道或通道到达或穿过所述第一半导体层以暴露所述衬底的一部分，导致用于在其上继续晶体生长的沟道衬底，以及（3）通过使用在所述沟道衬底上的外延生长晶体层产生 具有足够高以防止所述第一半导体层经历回熔的过饱和度的晶体生长溶液。
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