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    Semiconductor device
    2.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08618523B2

    公开(公告)日：2013-12-31

    申请号：US12302740

    申请日：2006-05-31

    申请人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

    发明人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

    IPC分类号： H01L47/00

    CPC分类号： G11C13/0004 ,  G11C8/08 ,  G11C13/0028 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.

    摘要翻译： 在嵌入作为下电极的插头（43）的绝缘膜（41）上，由氧化钽构成的绝缘膜（51）的叠层图案，由Ge-Sb-Te制成的记录层（52） 引入铟的硫属化合物和由钨或钨合金制成的上电极膜（53），从而形成相变存储器。 通过将绝缘膜（51）插入在记录层（52）和插塞（43）之间，可以实现降低相变存储器的编程电流的效果和防止记录层（52）的剥离的效果。 此外，通过使用引入了铟的Ge-Sb-Te类硫族化物作为记录层（52），绝缘膜（51）和记录层（52）之间的功函数差增大，编程 可以减小相变存储器的电压。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100096613A1

    公开(公告)日：2010-04-22

    申请号：US12522744

    申请日：2007-01-11

    申请人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

    发明人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

    IPC分类号： H01L45/00 ,  H01L21/02

    CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

    摘要： A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.

    摘要翻译： 相变存储器由形成在半导体衬底上的绝缘膜中的埋入通孔内的插塞形成，形成在绝缘膜上的界面层，其中埋入插塞，由硫化物层形成的记录层形成在 界面层和形成在记录层上的上接触电极。 根据电阻值变化存储信息的记录层由含有20原子％至38原子％的量的铟的含量为9原子％至28原子％的锗的硫属化物材料制成，3原子级的锑 ％〜18原子％，碲为42原子％〜63原子％，锗的含量大于或等于锑的含量。

    SEMICONDUCTOR DEVIC
    5.
    发明申请
    SEMICONDUCTOR DEVIC 失效
    半导体器件

    公开(公告)号：US20100012917A1

    公开(公告)日：2010-01-21

    申请号：US12302740

    申请日：2006-05-31

    申请人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

    发明人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

    IPC分类号： H01L47/00

    CPC分类号： G11C13/0004 ,  G11C8/08 ,  G11C13/0028 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.

    摘要翻译： 在嵌入作为下电极的插头（43）的绝缘膜（41）上，由氧化钽构成的绝缘膜（51）的叠层图案，由Ge-Sb-Te制成的记录层（52） 引入铟的硫属化合物和由钨或钨合金制成的上电极膜（53），从而形成相变存储器。 通过将绝缘膜（51）插入在记录层（52）和插塞（43）之间，可以实现降低相变存储器的编程电流的效果和防止记录层（52）的剥离的效果。 此外，通过使用引入了铟的Ge-Sb-Te类硫族化物作为记录层（52），绝缘膜（51）和记录层（52）之间的功函数差增大，编程 可以减小相变存储器的电压。

    SEMICONDUCTOR STORAGE DEVICE
    7.
    发明申请
    SEMICONDUCTOR STORAGE DEVICE 失效
    半导体存储设备

    公开(公告)号：US20100061132A1

    公开(公告)日：2010-03-11

    申请号：US12516690

    申请日：2006-12-07

    申请人： Yoshihisa Fujisaki ,  Satoru Hanzawa ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Norikatsu Takaura

    发明人： Yoshihisa Fujisaki ,  Satoru Hanzawa ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Norikatsu Takaura

    IPC分类号： G11C11/00 ,  H01L45/00 ,  G11C5/02 ,  G11C7/00

    CPC分类号： H01L45/144 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2213/75 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233

    摘要： In a semiconductor storage device such as a phase change memory, a technique which can realize high integration is provided. The semiconductor storage device includes a phase change thin film 101 having two stable phases of a crystal state with low electric resistance and an amorphous state with high electric resistance, upper plug electrodes 102 and 103 provided on one side of the phase change thin film 101, a lower electrode 104 provided on the other side of the phase change thin film 101, a selecting transistor 114 whose drain/source terminals are connected to the upper plug electrode 102 and the lower electrode 104, and a selecting transistor 115 whose drain/source terminals are connected to the upper plug electrode 103 and the lower electrode 104, and a first memory cell is configured with the selecting transistor 114 and a phase change region 111 in the phase change thin film 101 sandwiched between the upper plug electrode 102 and the lower electrode 104, and a second memory cell is configured with the selecting transistor 115 and a phase change region 112 in the phase change thin film 101 sandwiched between the upper plug electrode 103 and the lower electrode 104.

    摘要翻译： 在诸如相变存储器的半导体存储装置中，提供了可以实现高集成度的技术。 半导体存储装置包括：具有低电阻的晶体状态的两个稳定相和具有高电阻的非晶态的相变薄膜101，设置在相变薄膜101一侧的上部插塞电极102和103， 设置在相变薄膜101的另一侧的下部电极104，漏极/源极端子连接到上部插塞电极102和下部电极104的选择晶体管114，以及选择晶体管115，其漏极/源极端子 连接到上插头电极103和下电极104，并且第一存储单元配置有夹在上插头电极102和下电极之间的相变薄膜101中的选择晶体管114和相变区域111 104，并且第二存储单元配置有夹在b中的相变薄膜101中的选择晶体管115和相变区域112 在上塞电极103和下电极104之间。

    Semiconductor storage device
    8.
    发明授权
    Semiconductor storage device 失效
    半导体存储设备

    公开(公告)号：US07864568B2

    公开(公告)日：2011-01-04

    申请号：US12516690

    申请日：2006-12-07

    申请人： Yoshihisa Fujisaki ,  Satoru Hanzawa ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Norikatsu Takaura

    发明人： Yoshihisa Fujisaki ,  Satoru Hanzawa ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Norikatsu Takaura

    IPC分类号： G11C11/00

    CPC分类号： H01L45/144 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2213/75 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233

    摘要： In a semiconductor storage device such as a phase change memory, a technique which can realize high integration is provided. The semiconductor storage device includes a phase change thin film 101 having two stable phases of a crystal state with low electric resistance and an amorphous state with high electric resistance, upper plug electrodes 102 and 103 provided on one side of the phase change thin film 101, a lower electrode 104 provided on the other side of the phase change thin film 101, a selecting transistor 114 whose drain/source terminals are connected to the upper plug electrode 102 and the lower electrode 104, and a selecting transistor 115 whose drain/source terminals are connected to the upper plug electrode 103 and the lower electrode 104, and a first memory cell is configured with the selecting transistor 114 and a phase change region 111 in the phase change thin film 101 sandwiched between the upper plug electrode 102 and the lower electrode 104, and a second memory cell is configured with the selecting transistor 115 and a phase change region 112 in the phase change thin film 101 sandwiched between the upper plug electrode 103 and the lower electrode 104.

    摘要翻译： 在诸如相变存储器的半导体存储装置中，提供了可以实现高集成度的技术。 半导体存储装置包括：具有低电阻的晶体状态的两个稳定相和具有高电阻的非晶态的相变薄膜101，设置在相变薄膜101一侧的上部插塞电极102和103， 设置在相变薄膜101的另一侧的下部电极104，漏极/源极端子连接到上部插塞电极102和下部电极104的选择晶体管114，以及选择晶体管115，其漏极/源极端子 连接到上插头电极103和下电极104，并且第一存储单元配置有夹在上插头电极102和下电极之间的相变薄膜101中的选择晶体管114和相变区域111 104，并且第二存储单元配置有夹在b中的相变薄膜101中的选择晶体管115和相变区域112 在上塞电极103和下电极104之间。

    Semiconductor device with solid electrolyte switching
    9.
    发明授权
    Semiconductor device with solid electrolyte switching 失效
    具有固体电解质开关的半导体器件

    公开(公告)号：US07767997B2

    公开(公告)日：2010-08-03

    申请号：US12169818

    申请日：2008-07-09

    申请人： Yoshitaka Sasago ,  Motoyasu Terao ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Tomoyuki Kodama ,  Nobuyuki Arasawa

    发明人： Yoshitaka Sasago ,  Motoyasu Terao ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Tomoyuki Kodama ,  Nobuyuki Arasawa

    IPC分类号： H01L29/06 ,  H01L29/08

    CPC分类号： H01L45/1206 ,  G06N3/063 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/142 ,  H01L45/146 ,  H01L45/1675

    摘要： A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.

    摘要翻译： 具有小表面积的非易失性，复杂的半导体器件和能够切换三个或更多个电极之间的连接的简单结构。 在半导体器件中，电极中的至少一个在固体电解质中含有诸如铜或银之类的原子，能够容易地在固体电解质内移动，并且这些电极彼此面对并且施加电压通过产生或消除电压来开启和关闭电压 电极之间的导电路径。 此外，向单独的第三电极施加电压可以消除在两个电极之间形成的导电路径，而不向由导电路径连接的两个电极施加电压。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号：US20090014708A1

    公开(公告)日：2009-01-15

    申请号：US12169818

    申请日：2008-07-09

    申请人： Yoshitaka SASAGO ,  Motoyasu Terao ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Tomoyuki Kodama ,  Nobuyuki Arasawa

    发明人： Yoshitaka SASAGO ,  Motoyasu Terao ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Tomoyuki Kodama ,  Nobuyuki Arasawa

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1206 ,  G06N3/063 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/142 ,  H01L45/146 ,  H01L45/1675

    摘要： A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.

    摘要翻译： 具有小表面积的非易失性，复杂的半导体器件和能够切换三个或更多个电极之间的连接的简单结构。 在半导体器件中，电极中的至少一个在固体电解质中含有诸如铜或银之类的原子，能够容易地在固体电解质内移动，并且这些电极彼此面对并且施加电压通过产生或消除电压来开启和关闭电压 电极之间的导电路径。 此外，向单独的第三电极施加电压可以消除在两个电极之间形成的导电路径，而不向由导电路径连接的两个电极施加电压。