公开(公告)号：US20090203165A1

公开(公告)日：2009-08-13

申请号：US12233563

申请日：2008-09-18

申请人： Mustafa Pinarbasi ,  Serdar Aksu ,  Bulent M. Basol

发明人： Mustafa Pinarbasi ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： H01L31/0272 ,  H01L31/032

CPC分类号： H01L31/022425 ,  C25D3/56 ,  C25D5/50 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

摘要翻译： 提供一种薄膜太阳能电池，其包括在包括不锈钢基底的无缺陷基底上的IBIIIAVIA族吸收层。 对基体的不锈钢基材进行表面处理以去除表面粗糙度，例如引起分流的凸起。 在移除突起之前，首先将薄的保护性钌膜沉积在基底的凹入表面部分上，以在随后的突起移除期间保护这些部分。 在沉积过程中，表面上的突起很少或没有钌。 在形成钌膜之后，通过蚀刻剂蚀刻并除去突起，蚀刻剂仅侵蚀不锈钢，但对钌膜是中性的。 在钌层和基板的暴露部分之上形成接触层以完成基底。

公开(公告)号：US07824947B2

公开(公告)日：2010-11-02

申请号：US12233563

申请日：2008-09-18

申请人： Mustafa Pinarbasi ,  Serdar Aksu ,  Bulent M. Basol

发明人： Mustafa Pinarbasi ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  C25D3/56 ,  C25D5/50 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

摘要翻译： 提供一种薄膜太阳能电池，其包括在包括不锈钢基底的无缺陷基底上的IBIIIAVIA族吸收层。 对基体的不锈钢基材进行表面处理以去除表面粗糙度，例如引起分流的凸起。 在移除突起之前，首先将薄的保护性钌膜沉积在基底的凹入表面部分上，以在随后的突起移除期间保护这些部分。 在沉积过程中，表面上的突起很少或没有钌。 在形成钌膜之后，通过蚀刻剂蚀刻并除去突起，蚀刻剂仅侵蚀不锈钢，但对钌膜是中性的。 在钌层和基板的暴露部分之上形成接触层以完成基底。

公开(公告)号：US20120199490A1

公开(公告)日：2012-08-09

申请号：US13306863

申请日：2011-11-29

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D3/56

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/20 ,  Y02E10/541

摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

摘要翻译： 提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。 这样的层用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂 在导电表面上。

公开(公告)号：US20090315148A1

公开(公告)日：2009-12-24

申请号：US12143609

申请日：2008-06-20

申请人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

发明人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

IPC分类号： H01L21/20 ,  H01L29/26

CPC分类号： H01L31/0322 ,  C25D3/54 ,  C25D3/56 ,  C25D5/10 ,  C25D7/126 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

摘要翻译： 提供了一种电化学沉积方法，以形成具有可重复性的均匀且连续的IIIA族材料丰富的薄膜。 这种薄膜用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，IIIA族富含物质的薄膜沉积在包含20-90摩尔％的In和Ga中的至少一种和至少10摩尔％的包含Cu，Se，Te， Ag和S.中间层的厚度适于小于或等于IIIA族富含薄膜的厚度的约20％。

公开(公告)号：US20090283414A1

公开(公告)日：2009-11-19

申请号：US12123372

申请日：2008-05-19

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D11/32

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/20 ,  Y02E10/541

摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

摘要翻译： 提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。 这样的层用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂 在导电表面上。

公开(公告)号：US20080169025A1

公开(公告)日：2008-07-17

申请号：US11852980

申请日：2007-09-10

申请人： Bulent M. Basol ,  Serdar Aksu ,  Yuriy Matus

发明人： Bulent M. Basol ,  Serdar Aksu ,  Yuriy Matus

IPC分类号： H01L31/0272 ,  H01L31/04

CPC分类号： H01L31/0322 ,  H01L31/0323 ,  H01L31/0749 ,  Y02E10/541

摘要： A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a a metallic precursor layer with a dopant structure. The metallic precursor layer including Group IB and Group IIIA materials such as Cu, Ga and In are deposited on a base. The dopant structure is formed on the metallic precursor layer, wherein the dopant structure includes a stack of one or more Group VIA material layers such as Se layers and one or more a dopant material layers such as Na.

摘要翻译： 通过使金属前体层与掺杂剂结构反应形成用于太阳能电池的掺杂的IBIIIAVIA族吸收层的方法。 包括IB族和IIIA族材料的金属前体层如Cu，Ga和In沉积在基底上。 掺杂剂结构形成在金属前体层上，其中掺杂剂结构包括一个或多个VIA层的诸如Se层和一个或多个诸如Na的掺杂剂材料层的叠层。

公开(公告)号：US08444842B2

公开(公告)日：2013-05-21

申请号：US13306863

申请日：2011-11-29

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D3/56

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/20 ,  Y02E10/541

摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

摘要翻译： 提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。 这样的层用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂 在导电表面上。

公开(公告)号：US20120288986A1

公开(公告)日：2012-11-15

申请号：US13347540

申请日：2012-01-10

申请人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

发明人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

IPC分类号： H01L31/18

CPC分类号： H01L31/0322 ,  C25D3/54 ,  C25D3/56 ,  C25D5/10 ,  C25D7/126 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

摘要翻译： 提供了一种电化学沉积方法，以形成具有可重复性的均匀且连续的IIIA族材料丰富的薄膜。 这种薄膜用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，IIIA族富含物质的薄膜沉积在包含20-90摩尔％的In和Ga中的至少一种和至少10摩尔％的包含Cu，Se，Te， Ag和S.中间层的厚度适于小于或等于IIIA族富含薄膜的厚度的约20％。

公开(公告)号：US07897416B2

公开(公告)日：2011-03-01

申请号：US12816242

申请日：2010-06-15

申请人： Bulent M. Basol ,  Serdar Aksu

发明人： Bulent M. Basol ,  Serdar Aksu

IPC分类号： H01L21/66

CPC分类号： C25D5/10 ,  C25D5/48 ,  C25D21/12 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.

摘要翻译： 本发明涉及为辐射检测器和光伏应用的薄化合物半导体膜提供组合物控制的方法和装置。 在本发明的一个方面，提供了一种方法，其中检测多层中的元素的摩尔比，使得可以发生多元素层的调谐以获得具有预定摩尔数的多元素层 比例范围。 在本发明的另一方面，提供了一种方法，其中检测和调谐Cu，In和/或Ga之外的子层和其上的层的厚度，以便提供与预处理基本相同的调谐厚度， 确定厚度。

公开(公告)号：US20100317129A1

公开(公告)日：2010-12-16

申请号：US12816242

申请日：2010-06-15

申请人： Bulent M. Basol ,  Serdar Aksu

发明人： Bulent M. Basol ,  Serdar Aksu

IPC分类号： H01L21/66

CPC分类号： C25D5/10 ,  C25D5/48 ,  C25D21/12 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.

摘要翻译： 本发明涉及为辐射检测器和光伏应用的薄化合物半导体膜提供组合物控制的方法和装置。 在本发明的一个方面，提供了一种方法，其中检测多层中的元素的摩尔比，使得可以发生多元素层的调谐以获得具有预定摩尔数的多元素层 比例范围。 在本发明的另一方面，提供了一种方法，其中检测和调谐Cu，In和/或Ga之外的子层和其上的层的厚度，以便提供与预处理基本相同的调谐厚度， 确定厚度。