公开(公告)号：US08259529B2

公开(公告)日：2012-09-04

申请号：US12544807

申请日：2009-08-20

申请人： Myoung-Jin Lee ,  Jin-Hong An

发明人： Myoung-Jin Lee ,  Jin-Hong An

IPC分类号： G11C8/08 ,  G11C8/00

CPC分类号： G11C8/08 ,  G11C11/4076 ,  G11C11/4085

摘要： A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.

摘要翻译： 半导体存储器件包括多个字线和驱动器，其被配置为当多个字线的字线被激活命令激活时，驱动与激活的字线相邻的至少一个非激活字线和具有不同的剩余非激活字线 在激活的字线被驱动到高电压电平的时间段内的字线驱动电压电平。

公开(公告)号：US08699295B2

公开(公告)日：2014-04-15

申请号：US13564842

申请日：2012-08-02

申请人： Myoung-Jin Lee ,  Jin-Hong An

发明人： Myoung-Jin Lee ,  Jin-Hong An

IPC分类号： G11C8/08 ,  G11C8/00

CPC分类号： G11C8/08 ,  G11C11/4076 ,  G11C11/4085

摘要： A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.

摘要翻译： 半导体存储器件包括多个字线和驱动器，其被配置为当多个字线的字线被激活命令激活时，驱动与激活的字线相邻的至少一个非激活字线和具有不同的剩余非激活字线 在激活的字线被驱动到高电压电平的时间段内的字线驱动电压电平。

公开(公告)号：US08593883B2

公开(公告)日：2013-11-26

申请号：US13564864

申请日：2012-08-02

申请人： Myoung-Jin Lee ,  Jin-Hong An

发明人： Myoung-Jin Lee ,  Jin-Hong An

IPC分类号： G11C7/00

CPC分类号： G11C8/08 ,  G11C11/4076 ,  G11C11/4085

摘要： A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.

摘要翻译： 半导体存储器件包括多个字线和驱动器，其被配置为当多个字线的字线被激活命令激活时，驱动与激活的字线相邻的至少一个非激活字线和具有不同的剩余非激活字线 在激活的字线被驱动到高电压电平的时间段内的字线驱动电压电平。