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公开(公告)号：US11011678B2
公开(公告)日：2021-05-18
申请号：US16797581
申请日：2020-02-21
Applicant: NGK INSULATORS, LTD.
Inventor： Takayuki Hirao , Hirokazu Nakanishi , Mikiya Ichimura , Takanao Shimodaira , Masahiro Sakai , Takashi Yoshino
IPC: H01L33/00 , H01L33/32 , C01B21/06 , C09K11/08 , C09K11/62 , C09K11/64 , C30B29/40 , C30B29/38 , G09G3/3208 , H01L33/18
Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of the crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride.
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公开(公告)号：US10720566B2
公开(公告)日：2020-07-21
申请号：US16135577
申请日：2018-09-19
Applicant: NGK INSULATORS, LTD.
Inventor： Tomoyoshi Tai , Yuji Hori , Keiichiro Asai , Takashi Yoshino , Masashi Goto , Masahiko Namerikawa
IPC: H01L41/313 , H01L41/22 , H03H9/02 , H01L41/09 , H01L41/187 , H01L41/337 , H03H9/25 , H03H3/08 , H01L23/00 , H01L21/20
Abstract: It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.
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公开(公告)号：US10541514B2
公开(公告)日：2020-01-21
申请号：US15428236
申请日：2017-02-09
Applicant: NGK INSULATORS, LTD.
Inventor： Yoshitaka Kuraoka , Kentaro Nonaka , Tomohiko Sugiyama , Takashi Yoshino
Abstract: A vertical external-cavity surface-emitting laser (VECSEL) whose blueshift is reduced also in a high intensity range of emitted laser light is realized. A surface-emitting device for VECSEL includes a base substrate made of GaN and c-axis oriented, and an emitter structure formed of a group 13 nitride semiconductor and provided on the base substrate. The emitter structure is formed of unit deposition parts, each of which is provided on the base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light. A c-axis orientation of each of the unit deposition parts conforms to the c-axis orientation of the base substrate located directly below the unit deposition parts. Grooves are formed between the unit deposition parts.
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公开(公告)号：US09933569B2
公开(公告)日：2018-04-03
申请号：US14853144
申请日：2015-09-14
Applicant: NGK Insulators, Ltd.
Inventor： Jungo Kondo , Shoichiro Yamaguchi , Takashi Yoshino , Yukihisa Takeuchi
CPC classification number: G02B6/1228 , G02B6/124 , G02B6/4203 , G02B6/4206 , G02B2006/12059 , G02B2006/12097 , G02B2006/12107
Abstract: An evanescent light generation element for oscillating evanescent light from an optical waveguide to a clad layer, including a 0.1 μm-10 μm thin layer composed of a ferroelectric single crystal or oriented crystal having first and second principal surfaces, and incident side end and exit side end surfaces. A ridge optical waveguide is formed in the thin layer and extends between the incident and exit side end surfaces of the thin layer. At least a pair of grooves is formed on both sides of the ridge optical waveguide in the thin layer and opened at the first principal surface of the thin layer. A clad layer is provided on the first principal surface or the second principal surface. A width of the ridge optical waveguide at the exit side end surface is less than a width of the ridge optical waveguide at the incident side end surface.
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5.发明申请
公开(公告)号：US20140197420A1
公开(公告)日：2014-07-17
申请号：US14167667
申请日：2014-01-29
Applicant: NGK INSULATORS, LTD.
Inventor： Makoto Iwai , Takayuki Hirao , Takashi Yoshino
IPC: H01L33/32
CPC classification number: H01L33/32 , C30B19/02 , C30B29/38 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02625 , H01L33/007
Abstract: A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and a group 13 element under nitrogen containing atmosphere. The film 3 of a nitride of a group 13 element includes an inclusion distributed layer 3a in a region distant from an interface of the film of a nitride of group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a.
Abstract translation: 13族元素的氮化物的膜3通过在含氮气氛下含有助熔剂和13族元素的熔体的助熔剂在种子晶体基板11上生长。 13族元素的氮化物的膜3在与晶种基板11一侧的第13族元素的氮化物的界面相隔的区域中包含夹杂物分布层3a， 熔体和包含物耗尽层3b，其中包含物耗尽。 设置在层3a上。
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公开(公告)号：US20140158978A1
公开(公告)日：2014-06-12
申请号：US14175352
申请日：2014-02-07
Applicant: NGK INSULATORS, LTD.
Inventor： Makoto Iwai , Takayuki Hirao , Takashi Yoshino
CPC classification number: H01L33/0075 , C30B9/10 , C30B19/02 , C30B29/403 , C30B29/406 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/32
Abstract: A semiconductor light emitting device includes a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt including a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on the film of the nitride, a light emitting region provided on the n-type semiconductor layer, and a p-type semiconductor layer provided on the light emitting region. The film includes an inclusion distributed layer in a region distant by 50 μm or less from an interface of the film on the side of the seed crystal substrate and including inclusions derived from components of the melt, and an inclusion depleted layer with the inclusion depleted formed on the inclusion distributed layer.
Abstract translation: 半导体发光器件包括通过熔融法从在含氮气氛的熔融物和含有第13族元素的熔体中在晶种衬底上生长的第13族元素的氮化物的膜，在该氮化物气氛下设置的n型半导体层 氮化物膜，设置在n型半导体层上的发光区域和设置在发光区域上的p型半导体层。 该薄膜在距离种子晶体衬底侧的膜的界面远的区域中包含夹杂物分布层，并且包含衍生自熔体的组分的夹杂物以及包含贫化形成的夹杂物层 在包含分布层上。
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公开(公告)号：US11456720B2
公开(公告)日：2022-09-27
申请号：US16422322
申请日：2019-05-24
Applicant: NGK Insulators, Ltd.
Inventor： Masashi Goto , Tomoyoshi Tai , Takahiro Yamadera , Yuji Hori , Keiichiro Asai , Masahiko Namerikawa , Takashi Yoshino
Abstract: A piezoelectric monocrystalline substrate is composed of a material represented by LiAO3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of ExO(1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29≤x≤0.89).
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公开(公告)号：US20170211797A1
公开(公告)日：2017-07-27
申请号：US15413992
申请日：2017-01-24
Applicant: NGK INSULATORS, LTD.
Inventor： Masahiko Namerikawa , Takashi Yoshino , Katsuhiro Imai , Yoshitaka Kuraoka
IPC: F21V29/70 , F21V29/85 , F21V29/503 , F21V19/00
CPC classification number: F21V29/70 , F21V19/0015 , F21V29/503 , F21V29/85 , H01L33/642 , H01S5/02276 , H01S5/02469 , H01S5/02476 , H01S5/32341
Abstract: It is provided a heat discharge structure for a light source device emitting a semiconductor laser. The structure fixes the light source device and discharges heat. The structure includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.
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公开(公告)号：US20160268773A1
公开(公告)日：2016-09-15
申请号：US15165004
申请日：2016-05-26
Applicant: NGK INSULATORS, LTD.
Inventor： Jungo Kondo , Shoichiro Yamaguchi , Takashi Yoshino , Yukihisa Takeuchi
CPC classification number: H01S5/141 , G02B6/124 , H01S5/02252 , H01S5/0287 , H01S5/1021 , H01S5/1039 , H01S5/2202 , H01S2301/163
Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light by itself and a grating device providing an external resonator with the light source. The system performs oscillation in single mode. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (5) are satisfied.
Abstract translation: 外部谐振器型发光系统包括自身振荡半导体激光的光源和向光源提供外部谐振器的光栅装置。 系统在单模式下进行振荡。 光源包括振荡半导体激光的有源层。 光栅装置包括：光波导，其具有入射面，半导体激光入射到入射面，发射出所需波长的发射光的发射面;形成在光波导中的布拉格光栅;以及传播部，其设置在入射面 和布拉格光栅。 公式（1）〜（5）。
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公开(公告)号：US09045844B2
公开(公告)日：2015-06-02
申请号：US14167567
申请日：2014-01-29
Applicant: NGK INSULATORS, LTD.
Inventor： Makoto Iwai , Takayuki Hirao , Takashi Yoshino
CPC classification number: C30B9/10 , C30B19/02 , C30B29/403 , C30B33/06 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10T156/11
Abstract: A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3a in a region distant from an interface 11a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a. Laser light A is irradiated from the side of the back face 1b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.
Abstract translation: 第13族元素的氮化物的膜3通过助熔剂在含氮气氛的含熔剂和13族元素的熔体中在籽晶衬底11上生长。 第13族元素的氮化物的膜3在与晶种基板11一侧的第13族元素的氮化物的膜3的界面11a以外的区域中包含夹杂物分布层3a， 来自熔体的组分和包含物耗尽层3b，其中包含物耗尽。 设置在层3a上。 从晶种基板11的背面侧侧照射激光A，通过激光剥离法从晶种基板11剥离第13族元素的氮化物的单晶3。
