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公开(公告)号：US20230114358A1
公开(公告)日：2023-04-13
申请号：US17908167
申请日：2021-03-29
发明人： Yuto HASHIMOTO , Tokio NISHITA , Yuki ENDO
IPC分类号： H01L21/311 , G03F7/11 , C09D163/04 , H01L21/306 , H01L21/308
摘要： A protective film-forming composition excelling in preservation stability and having a favorable masking (protection) function against wet etching solutions when processing a semiconductor substrate, a protective film manufactured by using the composition, a substrate with a resist pattern, and a method for manufacturing a semiconductor device. The protective film-forming composition provides protection against wet etching solutions for semiconductors and contains: a polymer having a unit structure represented by Formula (1-1): Ar represents a benzene ring, a naphthalene ring, or an anthracene ring; R1 represents a hydroxy group, a mercapto group; n1 represents an integer from 0-3; n2 represents 1 or 2; L1 represents a single bond or an alkylene group that has 1-10 carbons; E represents an epoxy group; when n2=1, T1 represents an alkylene group that has 1-10 carbons; and when n2=2, T1 represents a nitrogen atom or an amide bond.
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2.发明申请公开(公告)号：US20220204686A1
公开(公告)日：2022-06-30
申请号：US17601674
申请日：2020-04-09
摘要： A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents —OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).
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公开(公告)号：US20210271168A1
公开(公告)日：2021-09-02
申请号：US17254562
申请日：2019-06-18
发明人： Takafumi ENDO , Yuichi GOTO , Masahisa ENDO , Satoshi KAMIBAYASHI , Yuki ENDO
IPC分类号： G03F7/11 , C08G59/26 , C07D405/14 , C09D163/00 , H01L21/027 , H01L21/308
摘要： A resist underlayer film having a particularly high dry etching rate; a resist underlayer film-forming composition; a resist pattern forming method; and a semiconductor device production method. The resist underlayer film-forming composition contains a solvent and an epoxy adduct obtained by reacting a compound represented by formula (1) and an epoxy adduct-forming compound. The epoxy adduct-forming compound is one or more compounds selected from the group made of carboxylic acid-containing compounds, carboxylic anhydride-containing compounds, hydroxy group-containing compounds, thiol group-containing compounds, amino group-containing compounds, and imide group-containing compounds.
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公开(公告)号：US20230103242A1
公开(公告)日：2023-03-30
申请号：US17782215
申请日：2020-11-26
发明人： Yuto HASHIMOTO , Shun KUBODERA , Shigetaka OTAGIRI , Satoshi KAMIBAYASHI , Tokio NISHITA , Yuichi GOTO , Yasunobu SOMEYA , Yuki ENDO
IPC分类号： C08G73/06 , C08G65/30 , C08G65/26 , C08G59/68 , C08G59/52 , C08G59/42 , C08G59/26 , C08G63/685
摘要： Provided is a method for producing a polymer, comprising: a first step for synthesizing a crude polymer by reacting a monomer containing a pyrimidinetrione structure, an imidazolidinedione structure, or a triazinetrione structure, in an organic solvent in the presence of a quaternary phosphonium salt or quaternary ammonium salt; and a second step for precipitating and separating a purified polymer by mixing a poor solvent with the crude polymer-containing solution obtained in the first step.
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公开(公告)号：US20220026806A1
公开(公告)日：2022-01-27
申请号：US17311965
申请日：2020-01-20
发明人： Tokio NISHITA , Takafumi ENDO , Yuki ENDO , Takahiro KISHIOKA
IPC分类号： G03F7/11 , C08F212/14 , C09D125/18 , C09D133/14 , C08F220/28 , H01L21/027
摘要： A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.
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公开(公告)号：US20220356297A1
公开(公告)日：2022-11-10
申请号：US17763253
申请日：2020-10-09
发明人： Satoshi KAMIBAYASHI , Yuki ENDO
IPC分类号： C08G59/26 , G03F7/20 , G03F7/11 , H01L21/308
摘要： A resist underlayer film having an especially high dry etching rate; a composition for forming the resist underlayer film; a method for forming a resist pattern; and a method for producing a semiconductor device. The composition for forming the resist underlayer film has a solvent and a product of reaction between an epoxidized compound and a heterocyclic compound containing at least one moiety having reactivity with an epoxy group. It is preferable that the heteroring contained in the heterocyclic compound be selected from among furan, pyrrole, pyran, imidazole, pyrazole, oxazole, thiophene, thiazole, thiadiazole, imidazolidine, thiazolidine, imidazoline, dioxane, morpholine, diazine, thiazine, triazole, tetrazole, dioxolane, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, indole, purine, quinoline, isoquinoline, quinuclidine, chromene, thianthrene, phenothiazine, phenoxazine, xanthene, acridine, phenazine, and carbazole.
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公开(公告)号：US20190292403A1
公开(公告)日：2019-09-26
申请号：US16339489
申请日：2017-10-02
IPC分类号： C09D183/06 , G03F7/40 , G03F7/16 , B05D1/32 , B05D1/36 , B05D3/10 , B05D7/04 , B05D7/24 , C08G77/38 , G03F7/11
摘要： A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1): R1aSi(R2)4-a Formula (1) and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.
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8.发明申请公开(公告)号：US20230131253A1
公开(公告)日：2023-04-27
申请号：US17911844
申请日：2021-03-30
发明人： Shun KUBODERA , Satoshi KAMIBAYASHI , Yuki ENDO
IPC分类号： G03F7/11 , C09D133/14 , C09D163/04 , H01L21/027 , H01L21/311
摘要： A resist underlayer film forming composition which has high storage stability, has a low film curing start temperature, can cause the generation of a sublimated product in a reduced amount, and enables the formation of a film that is rarely eluted into a photoresist solvent; a method for forming a resist pattern using the resist underlayer film forming composition; and a method for manufacturing a semiconductor device. The resist underlayer film forming composition includes a crosslinkable resin, a crosslinking agent, a crosslinking catalyst represented by formula (I) and a solvent. (A-SO3)−(BH)+[wherein A represents a linear, branched or cyclic saturated or unsaturated aliphatic hydrocarbon group which may be substituted, an aryl group which may be substituted by a group other than a hydroxy group, or a heteroaryl group which may be substituted; and B represents a base having a pKa value of 6.5 to 9.5.]
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公开(公告)号：US20220397828A1
公开(公告)日：2022-12-15
申请号：US17619433
申请日：2020-06-17
发明人： Takafumi ENDO , Yuki ENDO
IPC分类号： G03F7/11 , G03F7/42 , G03F7/004 , H01L21/027 , H01L21/308
摘要： A resist underlayer film that exhibits removability and preferably solubility only in wet etching reagent solutions, while exhibiting good resistance to resist developers that are resist solvents or aqueous alkali solutions. The composition for forming a resist underlayer film includes a dicyanostyryl group-bearing polymer (P) or dicyanostyryl group-bearing compound (C) and includes solvent, and does not contain a protonic acid curing catalyst and does not contain an alkylated aminoplast crosslinking agent derived from melamine, urea, benzoguanamine, or glycoluril.
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公开(公告)号：US20220319839A1
公开(公告)日：2022-10-06
申请号：US17619542
申请日：2020-06-17
发明人： Takafumi ENDO , Yuki ENDO
IPC分类号： H01L21/027 , C07D251/34
摘要： A resist underlayer film, which, while exhibiting excellent resistance to a resist developer which is a resist solvent or an alkaline aqueous solution, exhibits removability, and preferably solubility, only in wet etching chemicals. This composition for forming a resist underlayer film contains a solvent, a heterocyclic compound having a dicyanostyryl group, a cyclic compound including an amide group, for example, and the reaction product of a heterocyclic compound precursor having an epoxy group and an active proton compound, for example.
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