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    Integrated circuits separated by through-wafer trench isolation
    1.
    发明授权
    Integrated circuits separated by through-wafer trench isolation 有权
    通过晶圆沟槽隔离分离的集成电路

    公开(公告)号：US08853816B2

    公开(公告)日：2014-10-07

    申请号：US13705627

    申请日：2012-12-05

    Applicant: NXP B.V.

    Inventor： Peter Gerard Steeneken ,  Roel Daamen ,  Gerard Koops ,  Jan Sonsky ,  Evelyne Gridelet ,  Coenraad Cornelis Tak

    IPC: H01L21/70 ,  H01L21/8238 ,  H01L21/762

    CPC classification number: H01L21/76232 ,  H01L21/76224 ,  H01L21/823878

    Abstract: An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.

    Abstract translation: 一种隔离半导体电路，包括：第一子电路和第二子电路; 后端，其包括在所述第一和第二子电路之间的电隔离连接器; 在所述第一和第二子电路的半导体部分之间的横向隔离沟槽，其中所述横向隔离沟槽沿着所述第一和第二子电路的半导体部分的宽度延伸，其中所述隔离沟槽的一端与所述后端 ，并且其中所述隔离沟槽填充有电绝缘材料。

    PH SENSOR AND MANUFACTURING METHOD
    2.
    发明申请
    PH SENSOR AND MANUFACTURING METHOD 审中-公开
    PH传感器和制造方法

    公开(公告)号：US20140262781A1

    公开(公告)日：2014-09-18

    申请号：US14293677

    申请日：2014-06-02

    Applicant: NXP B.V.

    Inventor： Matthias Merz ,  Coenraad Cornelis Tak ,  Romano Hoofman

    IPC: G01N27/416

    Abstract: Disclosed is a pH sensor comprising a carrier (10) comprising a plurality of conductive tracks and an exposed conductive area (40) defining a reference electrode connected to one of said conductive tracks; a sensing device (30) mounted on the carrier and connected at least one other of said conductive tracks; an encapsulation (20) covering the carrier, said encapsulation comprising a first cavity (22) exposing a surface (32) of the sensing device and a second cavity (24) exposing the exposed conductive area, said second cavity comprising a reference electrode material (42) and an ion reservoir material (44) sharing at least one ion type with said reference electrode material, the reference electrode material being sandwiched between the exposed conductive area and the ion reservoir material. A method of manufacturing such a pH sensor is also disclosed.

    Abstract translation: 公开了一种pH传感器，其包括包括多个导电轨道的载体（10）和限定连接到所述导电轨道之一的参考电极的暴露导电区域（40） 感测装置（30），其安装在所述载体上并且连接至少另一个所述导电轨道; 覆盖所述载体的封装（20），所述封装包括暴露所述感测装置的表面（32）的第一空腔（22）和暴露所述暴露的导电区域的第二空腔（24），所述第二空腔包括参考电极材料 42）和与所述参考电极材料共享至少一种离子型离子储存器材料（44），所述参考电极材料夹在所述暴露的导电区域和所述离子储存器材料之间。 还公开了制造这种pH传感器的方法。

    Integrated circuits separated by through-wafer trench isolation
    5.
    发明授权
    Integrated circuits separated by through-wafer trench isolation 有权
    通过晶圆沟槽隔离分离的集成电路

    公开(公告)号：US09177852B2

    公开(公告)日：2015-11-03

    申请号：US14449522

    申请日：2014-08-01

    Applicant: NXP B.V.

    Inventor： Peter Gerard Steeneken ,  Roel Daamen ,  Gerard Koops ,  Jan Sonsky ,  Evelyne Gridelet ,  Coenraad Cornelis Tak

    IPC: H01L21/70 ,  H01L21/762 ,  H01L21/8238

    CPC classification number: H01L21/76232 ,  H01L21/76224 ,  H01L21/823878

    Abstract: An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.

    Abstract translation: 一种隔离半导体电路，包括：第一子电路和第二子电路; 后端，其包括在所述第一和第二子电路之间的电隔离连接器; 在所述第一和第二子电路的半导体部分之间的横向隔离沟槽，其中所述横向隔离沟槽沿着所述第一和第二子电路的半导体部分的宽度延伸，其中所述隔离沟槽的一端与所述后端 ，并且其中所述隔离沟槽填充有电绝缘材料。

    Integrated Sensor Chip Package with Directional Light Sensor, Apparatus including such a package and method of manufacturing such an Integrated Sensor Chip package
    10.
    发明申请
    Integrated Sensor Chip Package with Directional Light Sensor, Apparatus including such a package and method of manufacturing such an Integrated Sensor Chip package 有权
    具有定向光传感器的集成传感器芯片封装，包括这种封装的器件和制造这种集成传感器芯片封装的方法

    公开(公告)号：US20140361394A1

    公开(公告)日：2014-12-11

    申请号：US14299560

    申请日：2014-06-09

    Applicant: NXP B.V.

    Inventor： Zoran Zivkovic ,  Coenraad Cornelis Tak

    IPC: H01L27/146

    CPC classification number: H01L27/14687 ,  B01L3/502707 ,  G01L19/141 ,  G01S3/784 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is an integrated sensor chip package comprising an integrated sensor chip enveloped in a packaging layer (30), the integrated circuit comprising a substrate (10) having a major surface; and a light sensor comprising a plurality of photodetectors (12a-d) on a region of said major surface; the packaging layer comprising an opening (32) exposing said region, the integrated sensor chip package further comprising a light blocking member (20) over said opening, the light blocking member defining an aperture (22) exposing a first set of photodetectors to light from a first range of directions and exposing a second set of photodetectors to light from a second range of directions, wherein the first range is different to the second range. An apparatus including such an integrated sensor chip package and a method of manufacturing such an integrated sensor chip package are also disclosed.

    Abstract translation: 公开了一种集成传感器芯片封装，其包括封装在封装层（30）中的集成传感器芯片，该集成电路包括具有主表面的基板（10） 以及光传感器，包括在所述主表面的区域上的多个光电检测器（12a-d）; 所述包装层包括暴露所述区域的开口（32），所述集成传感器芯片封装还包括位于所述开口上方的遮光构件（20），所述遮光构件限定孔（22），所述遮光构件将第一组光电检测器暴露于来自 第一范围的方向并且将第二组光电检测器暴露于来自第二方向范围的光，其中所述第一范围不同于所述第二范围。 还公开了一种包括这种集成传感器芯片封装的装置和制造这种集成传感器芯片封装的方法。

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