公开(公告)号：US20090011148A1

公开(公告)日：2009-01-08

申请号：US12214393

申请日：2008-06-17

申请人： Nagarajan Rajagopalan ,  Bok Heon Kim ,  Lester A. D'Cruz ,  Zhenjiang Cui ,  Girish A. Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

发明人： Nagarajan Rajagopalan ,  Bok Heon Kim ,  Lester A. D'Cruz ,  Zhenjiang Cui ,  Girish A. Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC分类号： C23C16/22

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/42

摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

摘要翻译： 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US20080075888A1

公开(公告)日：2008-03-27

申请号：US11876680

申请日：2007-10-22

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Heon Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Heon Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H05H1/24

CPC分类号： H01L21/7684 ,  C23C16/4404 ,  C23G5/00 ,  H01L21/3212 ,  H01L21/76828 ,  H01L21/76838

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US06868856B2

公开(公告)日：2005-03-22

申请号：US09905515

申请日：2001-07-13

申请人： Thomas Nowak ,  Ian Latchford ,  Tsutomu Tanaka ,  Bok Heon Kim ,  Ping Xu ,  Jason Foster ,  Heath B. DeShong ,  Martin Seamons

发明人： Thomas Nowak ,  Ian Latchford ,  Tsutomu Tanaka ,  Bok Heon Kim ,  Ping Xu ,  Jason Foster ,  Heath B. DeShong ,  Martin Seamons

IPC分类号： B08B7/00 ,  C23C16/44 ,  C23C16/52 ,  H01J37/32 ,  B08B6/00 ,  H01L21/306

CPC分类号： H01J37/32862 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/52 ,  Y10S134/902

摘要： Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.

摘要翻译： 半导体加工设备清洗方法及装置。 该装置包括耦合到待清洁的半导体处理室的局部和远程气体离解器。 所述方法包括将前体气体引入到远离解离器中，其中气体被解离并将一部分解离的气体引入室中。 在引入室之前重新结合的解离气体的另一部分也被引入室中，在那里再次解离。 解离的气体与室内的污染物结合，并与污染物一起从室中排出。

公开(公告)号：US06436303B1

公开(公告)日：2002-08-20

申请号：US09359148

申请日：1999-07-21

申请人： Bok Heon Kim ,  Nam Le ,  Joseph V. D'Souza ,  Ashish Shrotriya

发明人： Bok Heon Kim ,  Nam Le ,  Joseph V. D'Souza ,  Ashish Shrotriya

IPC分类号： H01L2100

CPC分类号： H01L21/67069 ,  C23C16/0245 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/14 ,  C30B33/00 ,  C30B33/12 ,  H01L21/31116

摘要： A method and device for removing film from a substrate are provided that take advantage of a remote plasma source to etch away undesired portions of films, such as dielectric films formed on a substrate. To that end, the method includes forming a plasma remotely with respect to the process chamber, from which a flow is created that is directed toward the substrate. The substrate is of a type having opposed major surfaces with a peripheral surface extending therebetween. A film, such as a dielectric film, is disposed on one of the opposed major surfaces and on the peripheral surface. The opposed major surface having the film thereon is shielded from the flow of reactive radicals while the peripheral surface is left exposed. In this fashion, the flow is maintained for a sufficient amount of time to remove film present on the peripheral surface.

摘要翻译： 提供了从基板去除膜的方法和装置，其利用远程等离子体源来蚀刻诸如形成在基板上的电介质膜等不期望的部分的膜。 为此，该方法包括相对于处理室远程形成等离子体，产生朝向衬底的流动。 衬底是具有相对的主表面的类型，其周边表面在它们之间延伸。 诸如电介质膜的膜被设置在相对的主表面之一和外围表面上的一个上。 当其周围表面露出时，具有其上的膜的相对的主表面与反应性基团的流动被屏蔽。 以这种方式，保持流动足够的时间以除去存在于外围表面上的膜。

公开(公告)号：US09653327B2

公开(公告)日：2017-05-16

申请号：US13291286

申请日：2011-11-08

申请人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Chiu Chan ,  Martin J. Seamons ,  Bok Heon Kim

发明人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Chiu Chan ,  Martin J. Seamons ,  Bok Heon Kim

IPC分类号： H01L21/3065 ,  H01L21/67 ,  C23C16/02 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/6704 ,  C23C16/0245 ,  H01L21/02063 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76814

摘要： Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.

公开(公告)号：US20120285481A1

公开(公告)日：2012-11-15

申请号：US13291286

申请日：2011-11-08

申请人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Chiu Chan ,  Martin J. Seamons ,  Bok Heon Kim

发明人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Chiu Chan ,  Martin J. Seamons ,  Bok Heon Kim

IPC分类号： B08B6/00 ,  B08B7/04 ,  B08B5/00

CPC分类号： H01L21/6704 ,  C23C16/0245 ,  H01L21/02063 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76814

摘要： Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.

摘要翻译： 本发明的实施方案一般涉及使用水蒸气等离子体处理去除和/或清洁其上设置有不同材料层的衬底表面的方法。 在一个实施例中，一种用于清洁衬底的表面的方法包括将衬底定位到处理室中，所述衬底具有设置在其上的电介质层，在衬底上形成开口，将设置在衬底上的电介质层暴露于供应到衬底 在水蒸气中形成等离子体，将腔室中的处理压力保持在约1托至约120托之间，并清洁形成在基底上的接触结构。