公开(公告)号：US07723228B2

公开(公告)日：2010-05-25

申请号：US10442359

申请日：2003-05-20

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  H01L21/02074 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76828 ,  H01L21/7684

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US07371427B2

公开(公告)日：2008-05-13

申请号：US10442579

申请日：2003-05-20

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： B08B9/00 ,  B05D7/22

CPC分类号： H01L21/7684 ,  C23C16/4404 ,  C23G5/00 ,  H01L21/3212 ,  H01L21/76828 ,  H01L21/76838

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US20080075888A1

公开(公告)日：2008-03-27

申请号：US11876680

申请日：2007-10-22

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Heon Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Heon Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H05H1/24

CPC分类号： H01L21/7684 ,  C23C16/4404 ,  C23G5/00 ,  H01L21/3212 ,  H01L21/76828 ,  H01L21/76838

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US20090011148A1

公开(公告)日：2009-01-08

申请号：US12214393

申请日：2008-06-17

申请人： Nagarajan Rajagopalan ,  Bok Heon Kim ,  Lester A. D'Cruz ,  Zhenjiang Cui ,  Girish A. Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

发明人： Nagarajan Rajagopalan ,  Bok Heon Kim ,  Lester A. D'Cruz ,  Zhenjiang Cui ,  Girish A. Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC分类号： C23C16/22

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/42

摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

摘要翻译： 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US20050186339A1

公开(公告)日：2005-08-25

申请号：US10783316

申请日：2004-02-20

申请人： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

发明人： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC分类号： C23C16/02 ,  C23C16/42 ,  C23C16/52 ,  H01L21/768 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/42

摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

摘要翻译： 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US20070232082A1

公开(公告)日：2007-10-04

申请号：US11668911

申请日：2007-01-30

申请人： Mihaela Balseanu ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/469

CPC分类号： H01L21/76834 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831

摘要： A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.

摘要翻译： 提供了一种在室中的衬底上形成层的方法，其中衬底在其表面上具有至少一个形成的特征。 该方法包括在存在等离子体的情况下将衬底暴露于含硅前体以沉积一层，用等离子体处理沉积层，并重复曝光和处理，直到获得所需层厚。 等离子体可以由含氧气体产生。

公开(公告)号：US07601651B2

公开(公告)日：2009-10-13

申请号：US11668911

申请日：2007-01-30

申请人： Mihaela Balseanu ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/76834 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831

摘要： A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.

摘要翻译： 提供了一种在室中的衬底上形成层的方法，其中衬底在其表面上具有至少一个形成的特征。 该方法包括在存在等离子体的情况下将衬底暴露于含硅前体以沉积一层，用等离子体处理沉积层，并重复曝光和处理，直到获得所需层厚。 等离子体可以由含氧气体产生。

公开(公告)号：US07718548B2

公开(公告)日：2010-05-18

申请号：US11950691

申请日：2007-12-05

申请人： Sang M. Lee ,  Vladimir Zubkov ,  Zhenijiang Cui ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sang M. Lee ,  Vladimir Zubkov ,  Zhenijiang Cui ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/469

CPC分类号： H01L21/76856 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867

摘要： A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

摘要翻译： 描述了在半导体晶片上的铜表面上形成铜 - 氮化硅层的工艺。 该方法可以包括将晶片暴露于由氦制成的第一等离子体的步骤。 该方法还可以包括将晶片暴露于由还原气体制成的第二等离子体，其中第二等离子体从铜表面去除氧化铜，并将晶片暴露于硅烷，硅烷与铜表面反应以选择性地形成硅化铜 。 该方法还可以包括将晶片暴露于由氨和分子氮制成的第三等离子体，以形成铜氮化硅层。

公开(公告)号：US20100048030A1

公开(公告)日：2010-02-25

申请号：US12560941

申请日：2009-09-16

申请人： MIHAELA BALSEANU ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： MIHAELA BALSEANU ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/76834 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831

摘要： A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.

摘要翻译： 提供了一种在室中的衬底上形成层的方法，其中衬底在其表面上具有至少一个形成的特征。 该方法包括在存在等离子体的情况下将衬底暴露于含硅前体以沉积一层，用等离子体处理沉积层，并重复曝光和处理，直到获得所需层厚。 等离子体可以由含氧气体产生。

公开(公告)号：US20080213997A1

公开(公告)日：2008-09-04

申请号：US11950691

申请日：2007-12-05

申请人： Sang M. Lee ,  Vladimir Zubkov ,  Zhenijiang Cui ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sang M. Lee ,  Vladimir Zubkov ,  Zhenijiang Cui ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/768

CPC分类号： H01L21/76856 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867

摘要： A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

摘要翻译： 描述了在半导体晶片上的铜表面上形成铜 - 氮化硅层的工艺。 该方法可以包括将晶片暴露于由氦制成的第一等离子体的步骤。 该方法还可以包括将晶片暴露于由还原气体制成的第二等离子体，其中第二等离子体从铜表面去除氧化铜，并将晶片暴露于硅烷，硅烷与铜表面反应以选择性地形成硅化铜 。 该方法还可以包括将晶片暴露于由氨和分子氮制成的第三等离子体，以形成铜氮化硅层。