摘要:
A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.
摘要:
Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
摘要:
Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
摘要:
A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.
摘要:
A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.
摘要:
A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.
摘要:
A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.
摘要:
A method and apparatus for depositing organosilicate dielectric layers having good adhesion properties and low dielectric constant. Embodiments are described in which layers are deposited at low temperature and at high temperature. The low temperature layers are generally post-treated, whereas the high temperature layers need no post treating. Adhesion of the layers is promoted by use of an initiation layer.
摘要:
Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.
摘要:
Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.