Substrate conditioning for corona charge control
    1.
    发明授权
    Substrate conditioning for corona charge control 有权
    基底调理电晕充电控制

    公开(公告)号:US07724003B1

    公开(公告)日:2010-05-25

    申请号:US11938355

    申请日:2007-11-12

    IPC分类号: G01R31/26

    CPC分类号: H01L22/14

    摘要: A measurement system for taking a reading in a test zone on a surface of a substrate. A chamber forms an environment, a surface treatment station dispenses a stabilizing chemical in the test zone, a charge deposition station deposits a charge in the test zone, and a QV measurement station takes a QV based measurement in the test zone. Where the surface treatment station, the charge deposition station, and the QV measurement station all interact with the substrate within the chamber. In this manner, reliable QV measurements are taken on the substrate by controlling charge spreading with the stabilizing chemical. QV measurement stability is also improved by reducing the influence of the time trending on substrates with reactive dielectrics, such as on silicon oxynitride and high-k surfaces.

    摘要翻译: 用于在基板表面上的测试区域读取的测量系统。 室形成环境,表面处理站在测试区域中分配稳定化学品,电荷沉积站在测试区域中沉积电荷,QV测量站在测试区域进行基于QV的测量。 表面处理站,电荷沉积站和QV测量站都与室内的基板相互作用。 以这种方式,通过用稳定化学品控制电荷扩散,在衬底上进行可靠的QV测量。 通过减少时间趋势对具有反应性电介质的衬底(例如氮氧化硅和高k表面)的影响也可改善QV测量稳定性。

    Vapor deposition of thin films
    4.
    发明授权
    Vapor deposition of thin films 失效
    薄膜的蒸镀

    公开(公告)号:US5149596A

    公开(公告)日:1992-09-22

    申请号:US593839

    申请日:1990-10-05

    摘要: A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

    摘要翻译: 具有纳米晶体结构的高纯度金属薄膜和通过例如铑等离子体辅助化学气相沉积制备例如铑,铱,钼,钨,铼,铂或钯的高纯度薄金属薄膜的方法 (烯丙基)3,铱(烯丙基)3,钼(烯丙基)4,钨(烯丙基)4,铼(烯丙基)4,铂(烯丙基)2或钯(烯丙基)2)。 另外,公开了通过等离子体辅助化学气相沉积来降低由一种或多种有机金属前体化合物制备的金属膜的碳含量的一般方法。