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    Process to open carbon based hardmask overlying a dielectric layer
    2.
    发明申请
    Process to open carbon based hardmask overlying a dielectric layer 审中-公开
    打开覆盖介质层的碳基硬掩模的工艺

    公开(公告)号：US20080286977A1

    公开(公告)日：2008-11-20

    申请号：US12220233

    申请日：2008-07-22

    申请人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

    发明人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/31122

    摘要： A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead.

    摘要翻译： 一种由优选含有至少60％的碳和10至40％氢气的无定形碳组成的碳基硬掩模层的方法。 使用由H 2 N 2 N 2 N 2和CO组成的蚀刻气体通过等离子体蚀刻来打开硬掩模。蚀刻优选在具有HF偏置的等离子体蚀刻反应器中进行 基座电极和电容VHF偏置花洒。

    METHOD FOR ETCHING USING ADVANCED PATTERNING FILM IN CAPACITIVE COUPLING HIGH FREQUENCY PLASMA DIELECTRIC ETCH CHAMBER
    4.
    发明申请
    METHOD FOR ETCHING USING ADVANCED PATTERNING FILM IN CAPACITIVE COUPLING HIGH FREQUENCY PLASMA DIELECTRIC ETCH CHAMBER 审中-公开
    电容耦合高频等离子体电介质隔室中使用高级图案薄膜的蚀刻方法

    公开(公告)号：US20090023294A1

    公开(公告)日：2009-01-22

    申请号：US11778239

    申请日：2007-07-16

    申请人： JUDY WANG ,  Shing-Li Sung ,  Shawming Ma

    发明人： JUDY WANG ,  Shing-Li Sung ,  Shawming Ma

    IPC分类号： H01L21/461

    CPC分类号： H01L21/31122 ,  H01L21/31116 ,  H01L21/31144

    摘要： A method for etching wafers using advanced patterning film (APF) to reduce bowing and improve bottom-to-top ratios includes providing a wafer having an APF layer into a processing chamber, wherein the processing chamber is configured with a power source operating at about 162 MHz, supplying a process gas into the chamber, applying a source power using the 162 MHz power source, and applying a bias power to the wafer. The process gas comprises hydrogen gas (H2), nitrogen gas (N2), and carbon monoxide gas (CO). The ratio of H2:N2 is about 1:1. Additionally, the wafer temperature is adjusted to improve the etching characteristics.

    摘要翻译： 使用先进的图案形成薄膜（APF）来蚀刻晶片以减少弯曲并改善底部对顶部比率的方法包括将具有APF层的晶片提供到处理室中，其中处理室配置有操作大约162的电源 将工艺气体供应到腔室中，使用162MHz的电源施加源电力，并向晶片施加偏置功率。 工艺气体包括氢气（H 2），氮气（N 2）和一氧化碳气体（CO）。 H2：N2的比例约为1:1。 此外，调整晶片温度以改善蚀刻特性。

    Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
    6.
    发明申请
    Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity 失效
    介质等离子体蚀刻工艺，具有改进的临界尺寸和蚀刻选择性的原位无定形碳掩模

    公开(公告)号：US20070249171A1

    公开(公告)日：2007-10-25

    申请号：US11434951

    申请日：2006-05-16

    申请人： Shing-Li Sung ,  Wonseok Lee ,  Judy Wang ,  Shawming Ma

    发明人： Shing-Li Sung ,  Wonseok Lee ,  Judy Wang ,  Shawming Ma

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/76802 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76814

    摘要： A plasma-enhanced process is performed in a single plasma reactor chamber for etching a thin film layer on a workpiece, using a hard mask layer including an amorphous carbon layer (ACL) overlying the thin film layer and an anti-reflection coating (ARC) overlying the ACL. The process includes etching a pattern in the ARC in accordance with a photoresist mask overlying the ARC, using a plasma produced from a fluorine-containing process gas, and then removing fluorine-containing residue from the reactor chamber and/or workpiece by performing a first transition step by replacing the fluorine-containing process gas with an inert species process gas and maintaining a plasma in the reactor chamber. A pattern is then etched in the ACL using the ARC as an etch mask by replacing the argon process gas with a process gas containing hydrogen while maintaining a plasma in the chamber. Thereafter, hydrogen-containing residue is removed from the reactor and/or from the chamber by performing a flush step by replacing the hydrogen-containing process gas with argon gas and maintaining a plasma in the chamber. The process continues with etching a pattern in the thin film layer using the ACL as a hard mask by replacing the argon gas in the chamber with a species capable of etching the thin film layer.

    摘要翻译： 使用包括覆盖在薄膜层上的无定形碳层（ACL）和抗反射涂层（ARC）的硬掩模层，在单个等离子体反应器室中进行等离子体增强处理，以蚀刻工件上的薄膜层， 覆盖ACL。 该方法包括使用由含氟工艺气体产生的等离子体，根据覆盖在ARC上的光致抗蚀剂掩模蚀刻ARC中的图案，然后通过执行第一步骤从反应器室和/或工件中除去含氟残留物 通过用惰性物质处理气体代替含氟工艺气体并在反应器室中维持等离子体来实现。 然后使用ARC作为蚀刻掩模在ACL中蚀刻图案，通过用含有氢气的工艺气体代替氩气工艺气体，同时保持室内的等离子体。 此后，通过用氩气代替含氢处理气体并在室内维持等离子体，通过进行冲洗步骤从反应器和/或从室除去含氢残留物。 该过程继续以使用ACL作为硬掩模在薄膜层中蚀刻图案，通过用能够蚀刻薄膜层的种类替换室内的氩气。

    Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
    7.
    发明授权
    Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity 失效
    介质等离子体蚀刻工艺，具有改进的临界尺寸和蚀刻选择性的原位无定形碳掩模

    公开(公告)号：US07510976B2

    公开(公告)日：2009-03-31

    申请号：US11434951

    申请日：2006-05-16

    申请人： Shing-Li Sung ,  Wonseok Lee ,  Judy Wang ,  Shawming Ma

    发明人： Shing-Li Sung ,  Wonseok Lee ,  Judy Wang ,  Shawming Ma

    IPC分类号： H01L21/00 ,  B44C1/22

    CPC分类号： H01L21/76802 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76814

    摘要： A plasma etch process for successively different layers, including an anti-reflection coating (ARC), an amorphous carbon layer (ACL) and a dielectric layer, with successively different etch chemistries is performed in a single plasma reactor chamber. A first transition step is performed after etching the ARC by replacing the fluorine-containing process gas used in the ARC etch step with an inert species process gas. A flush step is performed after etching the ACL by replacing the hydrogen-containing process gas used in the ACL etch step with argon gas.

    摘要翻译： 在单个等离子体反应器室中执行用于连续不同层的等离子体蚀刻工艺，包括抗反射涂层（ARC），无定形碳层（ACL）和介电层以及连续不同的蚀刻化学性质。 在ARC蚀刻步骤中使用的含氟处理气体用惰性物质处理气体蚀刻ARC之后，进行第一转变步骤。 在蚀刻ACL之后，用氩气代替ACL蚀刻步骤中使用的含氢处理气体，进行冲洗步骤。

    Process to open carbon based hardmask
    8.
    发明授权
    Process to open carbon based hardmask 失效
    开放碳基硬掩模的工艺

    公开(公告)号：US07432210B2

    公开(公告)日：2008-10-07

    申请号：US11244422

    申请日：2005-10-05

    申请人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

    发明人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31144 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/31122

    摘要： A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead.

    摘要翻译： 一种由优选含有至少60％的碳和10至40％氢气的无定形碳组成的碳基硬掩模层的方法。 使用由H 2 N 2 N 2 N 2和CO组成的蚀刻气体通过等离子体蚀刻来打开硬掩模。蚀刻优选在具有HF偏置的等离子体蚀刻反应器中进行 基座电极和电容VHF偏置花洒。