摘要:
A semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a high concentration-high dielectric constant film 108b formed on the silicon substrate 102 and a polycrystalline silicon film 114, and a P-type MOSFET 120 including a low concentration-high dielectric constant film 108a and a polycrystalline silicon film 114 formed on the semiconductor substrate 102 to be juxtaposed to the N-type MOSFET 118. The low concentration-high dielectric constant film 108a and the high concentration-high dielectric constant film 108b are composed of a material containing one or more element (s) selected from a group consisting of Hf and Zr. The concentration of the above-described metallic element contained in the low concentration-high dielectric constant film 108a is lower than that contained in the high concentration-high dielectric constant film 108b.
摘要:
A semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a high concentration-high dielectric constant film 108b formed on the silicon substrate 102 and a polycrystalline silicon film 114, and a P-type MOSFET 120 including a low concentration-high dielectric constant film 108a and a polycrystalline silicon film 114 formed on the semiconductor substrate 102 to be juxtaposed to the N-type MOSFET 118. The low concentration-high dielectric constant film 108a and the high concentration-high dielectric constant film 108b are composed of a material containing one or more element (s) selected from a group consisting of Hf and Zr. The concentration of the above-described metallic element contained in the low concentration-high dielectric constant film 108a is lower than that contained in the high concentration-high dielectric constant film 108b.
摘要:
A semiconductor device 100 includes a silicon substrate 102, an N-type MOSFET 118 including a first high dielectric constant film 111 and a polycrystalline silicon film 114 on the silicon substrate 102, and a P-type MOSFET 120 including a second high dielectric constant film 12 and a polycrystalline silicon film 114 juxtaposed to N-type MOSFET 118 on the silicon substrate 102. The second high dielectric constant film 112 is formed to have the film thickness thinner than the film thickness of the first high dielectric constant film 111. The first high dielectric constant film 111 and the second high dielectric constant film 112 contains one or more element(s) selected from Hf and Zr.
摘要:
The semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a first high dielectric constant film 111 and a polycrystalline silicon film 114 formed on the silicon substrate 102, and a P-type MOSFET 120 including a second high dielectric constant film 112 and a polycrystalline silicon film 114 juxtaposed to N-type MOSFET 118 on the silicon substrate 102. The second high dielectric constant film 112 is formed to have the film thickness thinner than the film thickness of the first high dielectric constant film 111. The first high dielectric constant film 111 and the second high dielectric constant film 112 contains one or more element(s) selected from a group consisting of Hf and Zr.
摘要:
Threshold voltage of a field effect transistor is successfully adjusted with a smaller dose of an impurity, as compared with a conventional adjustment of the threshold voltage only by doping an impurity into the channel region. A semiconductor device 100 has a silicon substrate 101 and a P-type MOSFET 103 comprising a SiON film 113 formed on the silicon substrate 101, and a polycrystalline silicon film 106. Any one of, or two or more of metals selected from the group consisting of Hf, Zr, Al, La, Pr, Y, Ti, Ta and W are allowed to reside at the interface 115 between the polycrystalline silicon film 106 and the SiON film 113, and concentration of the metal(s) at the interface 115 is adjusted to 5×1013 atoms/cm2 or more and less than 1.4×1015 atoms/cm2.
摘要翻译:与仅通过将杂质掺杂到沟道区域中的阈值电压的常规调节相比,场效应晶体管的阈值电压被成功地用较小剂量的杂质调节。 半导体器件100具有硅衬底101和包括形成在硅衬底101上的SiON膜113的P型MOSFET 103和多晶硅膜106.选自以下的金属中的任何一种或两种以上选自 的Hf,Zr,Al,La,Pr,Y,Ti,Ta和W被放置在多晶硅膜106和SiON膜113之间的界面115处,并且界面115处的金属的浓度 被调整到5×10 13原子/ cm 2以上且小于1.4×10 15原子/ cm 2以上。
摘要:
Threshold voltage of a field effect transistor is successfully adjusted with a smaller dose of an impurity, as compared with a conventional adjustment of the threshold voltage only by doping an impurity into the channel region. A semiconductor device 100 has a silicon substrate 101 and a P-type MOSFET 103 comprising a SiON film 113 formed on the silicon substrate 101, and a polycrystalline silicon film 106. Any one of, or two or more of metals selected from the group consisting of Hf, Zr, Al, La, Pr, Y, Ti, Ta and W are allowed to reside at the interface 115 between the polycrystalline silicon film 106 and the SiON film 113, and concentration of the metal(s) at the interface 115 is adjusted to 5×1013 atoms/cm2 or more and less than 1.4×1015 atoms/cm2.
摘要翻译:与仅通过将杂质掺杂到沟道区域中的阈值电压的常规调节相比,场效应晶体管的阈值电压被成功地用较小剂量的杂质调节。 半导体器件100具有硅衬底101和包括形成在硅衬底101上的SiON膜113的P型MOSFET 103和多晶硅膜106.选自以下的金属中的任何一种或两种以上选自 的Hf,Zr,Al,La,Pr,Y,Ti,Ta和W被放置在多晶硅膜106和SiON膜113之间的界面115处,并且界面115处的金属的浓度 调整为5×1013原子/ cm 2以上且小于1.4×1015原子/ cm 2。
摘要:
While forming an N-type MOSFET 118 and a P-type MOSFET 120 within regions operating using the same power supply voltage, thickness of a gate insulating film 106a of an N-type MOSFET 118 is made to be thicker than thickness of a gate insulating film 106b of a P-type MOSFET 120.
摘要:
A semiconductor device provided with a MIS type field effect transistor comprising a silicon substrate, a gate insulating film having a high-dielectric-constant metal oxide film which is formed on the silicon substrate via a silicon containing insulating film, a silicon-containing gate electrode formed on the gate insulating film, and a sidewall including, as a constituting material, silicon oxide on a lateral face side of the gate electrode, wherein a silicon nitride film is interposed between the sidewall and at least the lateral face of the gate electrode. This semiconductor device, although having a fine structure with a small gate length, is capable of low power consumption and fast operation.
摘要:
A semiconductor device provided with a MIS type field effect transistor comprising a silicon substrate, a gate insulating film having a high-dielectric-constant metal oxide film which is formed on the silicon substrate via a silicon containing insulating film, a silicon-containing gate electrode formed on the gate insulating film, and a sidewall including, as a constituting material, silicon oxide on a lateral face side of the gate electrode, wherein a silicon nitride film is interposed between the sidewall and at least the lateral face of the gate electrode. This semiconductor device, although having a fine structure with a small gate length, is capable of low power consumption and fast operation.
摘要:
A method of manufacturing a semiconductor device includes forming a first region including a FinFET (Fin Field Effect Transistor), forming a second region including a PlanarFET (Planar Field Effect Transistor), forming first extension regions in the plurality of fins in the first region, forming second extension regions in the second region using the second gate electrode as a mask, forming first side walls and second side walls on side surfaces of the first gate electrode and on side surfaces of the second gate electrode, respectively, and forming a source and a drain of the FinFET in the first region using the first gate electrode and first side walls as masks and forming a source and a drain of the PlanarFET in the second region by an ion implantation method using the second gate electrode and second side walls as masks, at the same time.