公开(公告)号：US20110291110A1

公开(公告)日：2011-12-01

申请号：US13117575

申请日：2011-05-27

申请人： Naohiro SUZUKI ,  Hideo MATSUKI ,  Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Narumasa SOEJIMA ,  Yukihiko WATANABE

发明人： Naohiro SUZUKI ,  Hideo MATSUKI ,  Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Narumasa SOEJIMA ,  Yukihiko WATANABE

IPC分类号： H01L29/12 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068

摘要： The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.

摘要翻译： 碳化硅半导体器件包括衬底，漂移层，基极区域，源极区域，沟槽，栅极绝缘层，栅极电极，源极电极，漏极电极和深层。 深层设置在基底区域下方并且位于比沟槽更深的深度。 深层在与沟槽的纵向方向交叉的方向上分成多个部分。 这些部分包括设置在与沟槽相对应的位置处的一组部分，其在沟槽的纵向方向上以相等的间隔布置。 该组部分围绕沟槽的底部的角落。

公开(公告)号：US20170084735A1

公开(公告)日：2017-03-23

申请号：US15365150

申请日：2016-11-30

申请人： Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Akitaka SOENO ,  Jun MORIMOTO ,  DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi TAKEUCHI ,  Naohiro SUZUKI ,  Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Akitaka SOENO ,  Jun MORIMOTO ,  Narumasa SOEJIMA ,  Yukihiko WATANABE

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L21/04 ,  H01L29/66 ,  H01L29/417 ,  H01L29/872 ,  H01L29/15 ,  H01L21/761

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

公开(公告)号：US20120052642A1

公开(公告)日：2012-03-01

申请号：US13220756

申请日：2011-08-30

申请人： Takeshi ENDO ,  Shinichiro MIYAHARA ,  Tomoo MORINO ,  Masaki KONISHI ,  Hirokazu FUJIWARA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Takashi KATSUNO ,  Yukihiko WATANABE

发明人： Takeshi ENDO ,  Shinichiro MIYAHARA ,  Tomoo MORINO ,  Masaki KONISHI ,  Hirokazu FUJIWARA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Takashi KATSUNO ,  Yukihiko WATANABE

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

摘要： A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

摘要翻译： 制造半导体器件的方法包括在衬底上形成漂移层; 在漂移层上形成基层; 形成沟槽以穿透基层并到达漂移层; 将沟槽的一部分肩部角落和底角的一部分倒圆; 用有机膜覆盖沟槽的内壁; 将杂质注入基层的表面部分; 通过激活注入的杂质形成源区; 在形成源极区域之后除去有机膜，其中基板，漂移层，基极层和源极区域由碳化硅构成，并且杂质的注入和活化在 沟槽被有机膜覆盖。

公开(公告)号：US20090194326A1

公开(公告)日：2009-08-06

申请号：US12361617

申请日：2009-01-29

申请人： Jun MORIMOTO

发明人： Jun MORIMOTO

IPC分类号： H05K7/14 ,  B23P17/00

CPC分类号： H04M1/026 ,  H04M1/0266 ,  Y10T29/49002

摘要： An electronic device includes: a housing; an electronic component provided inside the housing; and a holding member provided between an inner wall of the housing and the electronic component and configured to hold the electronic component. The holding member is configured to hold a first region of a major surface of the electronic component located on a first end surface side, and the holding member is configured not to hold a second region of the major surface of the electronic component located on a second end surface side opposed to the first end surface side.

摘要翻译： 电子设备包括：壳体; 设置在所述壳体内的电子部件; 以及设置在所述壳体的内壁和所述电子部件之间并被配置为保持所述电子部件的保持构件。 保持构件被构造成保持位于第一端面侧的电子部件的主表面的第一区域，并且保持构件被构造成不将电子部件的主表面的第二区域保持在第二区域的第二区域 端面侧与第一端面侧相对。

公开(公告)号：US20090141509A1

公开(公告)日：2009-06-04

申请号：US12270639

申请日：2008-11-13

申请人： Koshi HAYAKAWA ,  Mutsumi KATAYAMA ,  Jun MORIMOTO

发明人： Koshi HAYAKAWA ,  Mutsumi KATAYAMA ,  Jun MORIMOTO

IPC分类号： B62J6/00

CPC分类号： B62J6/02 ,  B62J11/00

摘要： A lighting apparatus has a housing and is disposed at a lower end of a front fork of a motorcycle. The housing includes a front opening disposed on a side of a radiation direction of a lighting body and a side opening disposed on a center side in a width direction of a motorcycle. The side opening in the housing, covered by a lid, is wide enough for the lighting body to pass through. The housing includes a wire guide for withdrawing an electric wire and a drain hole formed in a bottom portion of the housing. The lighting body is fixed on a board. The housing includes rails disposed on an upper wall portion and a lower wall portion thereof, into which an upper end and a lower end of the board are to be fitted so as to position the lighting body in a longitudinal direction.

摘要翻译： 照明装置具有壳体，并且设置在摩托车的前叉的下端。 壳体包括设置在照明体的辐射方向侧的前开口和设置在摩托车的宽度方向上的中心侧的侧开口。 由盖子覆盖的外壳中的侧面开口足够宽，以使照明体通过。 壳体包括用于取出电线的线引导件和形成在壳体的底部中的排水孔。 照明体固定在电路板上。 壳体包括设置在其上壁部分和下壁部分上的轨道，其中板的上端和下端将被配合到其中以沿着纵向方向定位照明体。

公开(公告)号：US20100230782A1

公开(公告)日：2010-09-16

申请号：US12721151

申请日：2010-03-10

申请人： Shinichi UCHIDA ,  Masayuki FURUMIYA ,  Hiroshi SAKAKIBARA ,  Takashi IWADARE ,  Yoshiyuki SATO ,  Makoto EGUCHI ,  Masato TAKI ,  Hidetoshi MORISHITA ,  Kozo KATO ,  Jun MORIMOTO

发明人： Shinichi UCHIDA ,  Masayuki FURUMIYA ,  Hiroshi SAKAKIBARA ,  Takashi IWADARE ,  Yoshiyuki SATO ,  Makoto EGUCHI ,  Masato TAKI ,  Hidetoshi MORISHITA ,  Kozo KATO ,  Jun MORIMOTO

IPC分类号： H01L23/522 ,  H01L29/86

CPC分类号： H01L23/5227 ,  H01L23/48 ,  H01L23/49822 ,  H01L23/645 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/49052 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/19042 ,  H01L2924/30107 ,  H04L25/0266 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A first semiconductor chip includes a first inductor and a second inductor, and a second semiconductor chip includes a third inductor and a fourth inductor. The first inductor is connected to a first receiving circuit of the first semiconductor chip, and the second inductor is connected to a second transmitting circuit of the second semiconductor chip through a first bonding wire. The third inductor is connected to a second receiving circuit of the second semiconductor chip, and the fourth inductor is connected to a first transmitting circuit of the first semiconductor chip through a second bonding wire.

摘要翻译： 第一半导体芯片包括第一电感器和第二电感器，第二半导体芯片包括第三电感器和第四电感器。 第一电感器连接到第一半导体芯片的第一接收电路，第二电感器通过第一接合线连接到第二半导体芯片的第二发送电路。 第三电感器连接到第二半导体芯片的第二接收电路，第四电感器通过第二接合线连接到第一半导体芯片的第一发送电路。

公开(公告)号：US20080236924A1

公开(公告)日：2008-10-02

申请号：US12047153

申请日：2008-03-12

申请人： Yoshiyuki HORII ,  Masamoto ITO ,  Yohei MAKUTA ,  Jun MORIMOTO

发明人： Yoshiyuki HORII ,  Masamoto ITO ,  Yohei MAKUTA ,  Jun MORIMOTO

IPC分类号： B62K11/00

CPC分类号： B60K11/085 ,  B60K1/04 ,  B60K11/04 ,  B60K2001/005 ,  B60Y2200/126 ,  B62J33/00 ,  B62K2202/00 ,  B62K2204/00 ,  Y02T10/88

摘要： A fuel cell powered vehicle includes radiators disposed on left and right sides on the skew rear side of a front wheel in relation to the vehicle body front-rear direction. A secondary battery is disposed between the left and right radiators. A thin plate-shaped inner cowl is disposed between the secondary battery and the front wheel. Duct mechanisms surrounding the radiators are provided on the left and right sides of the inner cowl and inside a cowling. Each duct mechanism includes introduction ports for a running airflow, and a discharge port that is fitted with variable-type louvers. A voltage converter unit is accommodated in a straddled part of the vehicle. Radiating fins of the voltage converter include plate-like members erected in the vehicle body front-rear direction that are directed toward the upper side of the vehicle body and are exposed to the exterior of the vehicle body.

摘要翻译： 燃料电池动力车辆包括相对于车身前后方向设置在前轮的歪斜后侧的左侧和右侧的散热器。 二次电池设置在左右散热器之间。 在二次电池和前轮之间设置薄板状的内罩。 围绕散热器的管道机构设置在内罩的左侧和右侧以及整流罩内。 每个管道机构包括用于运行气流的引入口和装有可变式百叶窗的排出口。 电压转换器单元容纳在车辆的跨接部分中。 电压转换器的散热片包括竖立在车体前后方向上的朝向车体上侧的露出于车体外部的板状部件。