-
公开(公告)号：US06905928B2
公开(公告)日：2005-06-14
申请号：US10143192
申请日：2002-05-09
申请人： Naoki Kanda , Arito Ogawa , Eisuke Nishitani , Miwako Nakahara , Tadanori Yoshida , Kiyoshi Ogata
发明人： Naoki Kanda , Arito Ogawa , Eisuke Nishitani , Miwako Nakahara , Tadanori Yoshida , Kiyoshi Ogata
IPC分类号： H01L21/285 , H01L21/28 , H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L21/336
CPC分类号： H01L21/823828 , H01L21/2807 , H01L21/823857
摘要： When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.
-
公开(公告)号：US06870224B2
公开(公告)日：2005-03-22
申请号：US10641908
申请日：2003-08-15
申请人： Naoki Kanda , Arito Ogawa , Eisuke Nishitani , Miwako Nakahara , Tadanori Yoshida , Kiyoshi Ogata
发明人： Naoki Kanda , Arito Ogawa , Eisuke Nishitani , Miwako Nakahara , Tadanori Yoshida , Kiyoshi Ogata
IPC分类号： H01L21/285 , H01L21/28 , H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/94
CPC分类号： H01L21/823828 , H01L21/2807 , H01L21/823857
摘要： When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine particles of particle size 10 nm or less on an oxide film. As a result, it is possible to achieve a high-speed MOS transistor apparatus using an ultra-thin oxide film having a film thickness of 1.5 nm or less, wherein the Ge concentration of the polycrystalline silicon germanium at its interface with the oxide film is uniform, thereby reducing the stress in the film, and improving the reliability of the gate electrode.
摘要翻译： 在多晶硅锗膜用于MOS晶体管装置中的栅电极时，由于硅锗颗粒中的应力，存在栅极绝缘膜的可靠性降低的问题。 因此，在氧化膜上形成粒径为10nm以下的硅微粒之后，形成多晶硅锗膜。 结果，可以实现使用膜厚度为1.5nm以下的超薄氧化膜的高速MOS晶体管装置，其中与氧化膜界面的多晶硅锗的Ge浓度为 均匀，从而降低膜中的应力，并提高栅电极的可靠性。
-
公开(公告)号：US06767760B2
公开(公告)日：2004-07-27
申请号：US10166311
申请日：2002-06-11
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2100
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.
摘要翻译： 通过用激光照射结晶的多晶硅层，在500℃以下的加工温度下进料由臭氧气体和H 2 O或N 2 O气体构成的混合气体，或者多晶硅层预先用溶液 作为臭氧水或NH 3 /过氧化氢水溶液，随后用臭氧进行氧化处理，在多晶硅层的表面形成厚度为4nm以上的氧化硅层，以形成具有较小变化的薄膜晶体管 未退火玻璃基板上的特性。
-
公开(公告)号：US06815717B2
公开(公告)日：2004-11-09
申请号：US09988585
申请日：2001-11-20
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2904
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.
-
公开(公告)号：US07264677B2
公开(公告)日：2007-09-04
申请号：US11252786
申请日：2005-10-19
申请人： Miwako Nakahara , Toshiyuki Arai , Shigeru Ohno , Takashi Yunogami , Sukeyoshi Tsunekawa , Kazuto Watanabe
发明人： Miwako Nakahara , Toshiyuki Arai , Shigeru Ohno , Takashi Yunogami , Sukeyoshi Tsunekawa , Kazuto Watanabe
IPC分类号： C23G1/00
CPC分类号： C23G5/00 , C23C16/4405 , C23F1/12 , H01L21/32135 , H01L21/32136 , H01L28/65 , Y10S438/905
摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.
摘要翻译： 钌，锇及其氧化物可以通过向金属及其氧化物之间的金属及其氧化物之间的催化提供原子供氧气体（通常为臭氧），并且通过臭氧对晶片和反应器没有任何损害来简单而快速地进行蚀刻 并且催化剂不仅用于蚀刻而且还用于室清洁，确保反应堆的稳定运行和高品质装置的生产。
-
公开(公告)号：US20080095935A1
公开(公告)日：2008-04-24
申请号：US11860592
申请日：2007-09-25
CPC分类号： C12Q1/6825 , Y10T29/49826 , Y10T436/143333 , C12Q2565/107 , C12Q2563/137 , C12Q2523/313
摘要： A biosensor is formed by immobilizing metal particles immobilized on a surface of a carrier and immobilizing probe molecules which are modified with fluorescent molecules on the metal particles. A biomolecule is detected at high sensitivity by use of this biosensor and utilizing fluorescence-quenching and fluorescence-enhancement effects attributable to the metal particle. In this way, it is possible to omit amplification of the biomolecule in a specimen and fluorescence-labeling on the biomolecule when detecting the biomolecule with the biosensor. It is also possible to improve quantitative reliability and repeatability of the biosensor.
-
公开(公告)号：US20070004027A1
公开(公告)日：2007-01-04
申请号：US11270456
申请日：2005-11-10
申请人： Miwako Nakahara , Takashi Inoue , Tomonori Saeki , Osamu Kogi , Noriko Ban
发明人： Miwako Nakahara , Takashi Inoue , Tomonori Saeki , Osamu Kogi , Noriko Ban
IPC分类号： C12M1/34
CPC分类号： G01N33/54393 , G01N33/54353
摘要： When probe biomolecules are immobilized on a substrate surface, a surfactant (phase transfer catalyst) is added for reaction, whereby immobilization efficiency of the probe biomolecules and coating uniformity thereof are improved. Consequently, it is possible to dramatically improve quantitativity and reproducibility of the biosensor element.
摘要翻译： 当将探针生物分子固定在基材表面上时，加入表面活性剂（相转移催化剂）进行反应，从而提高了探针生物分子的固定效率和涂层均匀性。 因此，可以显着提高生物传感器元件的定量性和再现性。
-
公开(公告)号：US06607988B2
公开(公告)日：2003-08-19
申请号：US09749554
申请日：2000-12-28
申请人： Takashi Yunogami , Yoshitaka Nakamura , Kazuo Nojiri , Sukeyoshi Tsunekawa , Toshiyuki Arai , Miwako Nakahara , Shigeru Ohno , Tomonori Saeki , Masaru Izawa
发明人： Takashi Yunogami , Yoshitaka Nakamura , Kazuo Nojiri , Sukeyoshi Tsunekawa , Toshiyuki Arai , Miwako Nakahara , Shigeru Ohno , Tomonori Saeki , Masaru Izawa
IPC分类号： H01L21302
CPC分类号： H01L28/65 , C23F4/00 , H01L21/32136 , H01L27/10814 , H01L27/10852 , H01L28/91
摘要： With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.
摘要翻译： 为了提供使用光致抗蚀剂作为蚀刻掩模对Ru（钌）进行高选择性蚀刻的技术，覆盖沉积在孔的侧壁和底表面上的下电极材料的Ru膜被覆盖 与光致抗蚀剂膜接触，然后在含有臭氧气体的气体气氛中进行各向同性的干法蚀刻，由此除去孔外部的Ru膜的一部分。
-
公开(公告)号：US20080014581A1
公开(公告)日：2008-01-17
申请号：US11670501
申请日：2007-02-02
CPC分类号： C12Q1/6825 , Y10T29/49826 , Y10T436/143333 , C12Q2565/107 , C12Q2563/137 , C12Q2523/313
摘要： A biosensor is formed by immobilizing metal particles immobilized on a surface of a carrier and immobilizing probe molecules which are modified with fluorescent molecules on the metal particles. A biomolecule is detected at high sensitivity by use of this biosensor and utilizing fluorescence-quenching and fluorescence-enhancement effects attributable to the metal particle. In this way, it is possible to omit amplification of the biomolecule in a specimen and fluorescence-labeling on the biomolecule when detecting the biomolecule with the biosensor. It is also possible to improve quantitative reliability and repeatability of the biosensor.
摘要翻译： 通过固定固定在载体表面上的金属颗粒并将在荧光分子上修饰的探针分子固定在金属颗粒上而形成生物传感器。 通过使用该生物传感器以高灵敏度检测生物分子，并利用归因于金属颗粒的荧光猝灭和荧光增强效应。 以这种方式，当用生物传感器检测生物分子时，可以省略样品中的生物分子的扩增和生物分子上的荧光标记。 也可以提高生物传感器的定量可靠性和重复性。
-
10.发明申请公开(公告)号：US20070003945A1
公开(公告)日：2007-01-04
申请号：US11270612
申请日：2005-11-10
申请人： Miwako Nakahara , Takashi Inoue , Tomonori Saeki , Osamu Kogi , Noriko Ban
发明人： Miwako Nakahara , Takashi Inoue , Tomonori Saeki , Osamu Kogi , Noriko Ban
CPC分类号： G01B11/2441 , G01B11/0675
摘要： When a biomolecule and a biochemical reactant are detected, a white interference method is used to conduct a noncontact and nondestructive detection, and further to conduct efficient and accurate detection. This method is applied to a biosensor element, whereby non-labeled and noncontact quality control can be achieved.
摘要翻译： 当检测到生物分子和生物化学反应物时，使用白色干涉法进行非接触和非破坏性检测，并进一步进行有效和准确的检测。 该方法应用于生物传感器元件，由此可以实现非标记和非接触质量控制。
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.033 秒)