公开(公告)号：US08901650B2

公开(公告)日：2014-12-02

申请号：US13575959

申请日：2011-02-01

申请人： Naoki Makita ,  Hiroki Mori ,  Masaki Saitoh

发明人： Naoki Makita ,  Hiroki Mori ,  Masaki Saitoh

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L27/1214 ,  H01L27/092 ,  H01L27/1108 ,  H01L27/1222 ,  H01L27/1277 ,  H01L27/1288 ,  H01L29/045 ,  H01L29/78696

摘要： A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer. Accordingly, a driving voltage of the semiconductor device provided with the n-type TFT and the p-type TFT can be reduced.

摘要翻译： 本发明的半导体器件在同一衬底上包括n沟道第一薄膜晶体管和p沟道第二薄膜晶体管。 第一薄膜晶体管具有第一半导体层（27），第二薄膜晶体管具有第二半导体层（22）。 第一半导体层（27）和第二半导体层（22）由同一膜形成。 第一半导体层（27）和第二半导体层（22）中的每一个具有位于周边的倾斜部分（27e，22e）和除斜坡部分之外的部分的主要部分（27m，22m）。 仅在第一半导体层的倾斜部分（27e）的一部分中，比第一半导体层的主要部分（27m）更高的密度，将第二半导体层的主要部分（22m）引入p型杂质 ，和第二半导体层的倾斜部分（22e）。 因此，可以减小设置有n型TFT和p型TFT的半导体器件的驱动电压。

公开(公告)号：US20120305930A1

公开(公告)日：2012-12-06

申请号：US13575959

申请日：2011-02-01

申请人： Naoki Makita ,  Hiroki Mori ,  Masaki Saitoh

发明人： Naoki Makita ,  Hiroki Mori ,  Masaki Saitoh

IPC分类号： H01L29/786 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L27/1214 ,  H01L27/092 ,  H01L27/1108 ,  H01L27/1222 ,  H01L27/1277 ,  H01L27/1288 ,  H01L29/045 ,  H01L29/78696

摘要： A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer. Accordingly, a driving voltage of the semiconductor device provided with the n-type TFT and the p-type TFT can be reduced.

摘要翻译： 本发明的半导体器件在同一衬底上包括n沟道第一薄膜晶体管和p沟道第二薄膜晶体管。 第一薄膜晶体管具有第一半导体层（27），第二薄膜晶体管具有第二半导体层（22）。 第一半导体层（27）和第二半导体层（22）由同一膜形成。 第一半导体层（27）和第二半导体层（22）中的每一个具有位于周边的倾斜部分（27e，22e）和除斜坡部分之外的部分的主要部分（27m，22m）。 仅在第一半导体层的倾斜部分（27e）的一部分中，比第一半导体层的主要部分（27m）更高的密度，将第二半导体层的主要部分（22m）引入p型杂质 ，和第二半导体层的倾斜部分（22e）。 因此，可以减小设置有n型TFT和p型TFT的半导体器件的驱动电压。

公开(公告)号：US20120282741A1

公开(公告)日：2012-11-08

申请号：US13515683

申请日：2010-12-13

申请人： Hiroki Mori ,  Masaki Saitoh ,  Takumi Tomita

发明人： Hiroki Mori ,  Masaki Saitoh ,  Takumi Tomita

IPC分类号： H01L21/336

CPC分类号： H01L27/127 ,  H01L27/1222

摘要： Disclosed is a method of manufacturing a thin film transistor device that includes the following steps: forming slanted portions 51 in edges of crystalline semiconductor films 13 (13a and 13b); forming a resist film 15 on the crystalline semiconductor film 13a so as to expose the slanted portions 51 and so as to cover the entire crystalline semiconductor film 13b; performing half exposure of the resist film 15 that is formed on the crystalline semiconductor film 13a; injecting a p-type impurity only into the slanted portions 51 of the crystalline semiconductor film 13a; removing the resist film 15 that is formed on the crystalline semiconductor film 13a by ashing; and injecting the p-type impurity into the entire crystalline semiconductor film 13a.

摘要翻译： 公开了一种制造薄膜晶体管器件的方法，包括以下步骤：在结晶半导体膜13（13a和13b）的边缘形成倾斜部分51; 在结晶半导体膜13a上形成抗蚀剂膜15，以露出倾斜部分51并覆盖整个结晶半导体膜13b; 对形成在结晶半导体膜13a上的抗蚀剂膜15进行半曝光; 将p型杂质仅注入到晶体半导体膜13a的倾斜部分51中; 通过灰化除去在结晶半导体膜13a上形成的抗蚀剂膜15; 并将p型杂质注入到整个晶体半导体膜13a中。

公开(公告)号：US08759166B2

公开(公告)日：2014-06-24

申请号：US13515683

申请日：2010-12-13

申请人： Hiroki Mori ,  Masaki Saitoh ,  Takumi Tomita

发明人： Hiroki Mori ,  Masaki Saitoh ,  Takumi Tomita

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/127 ,  H01L27/1222

摘要： Disclosed is a method of manufacturing a thin film transistor device that includes the following steps: forming slanted portions 51 in edges of crystalline semiconductor films 13 (13a and 13b); forming a resist film 15 on the crystalline semiconductor film 13a so as to expose the slanted portions 51 and so as to cover the entire crystalline semiconductor film 13b; performing half exposure of the resist film 15 that is formed on the crystalline semiconductor film 13a; injecting a p-type impurity only into the slanted portions 51 of the crystalline semiconductor film 13a; removing the resist film 15 that is formed on the crystalline semiconductor film 13a by ashing; and injecting the p-type impurity into the entire crystalline semiconductor film 13a.

摘要翻译： 公开了一种制造薄膜晶体管器件的方法，包括以下步骤：在结晶半导体膜13（13a和13b）的边缘形成倾斜部分51; 在结晶半导体膜13a上形成抗蚀剂膜15，以露出倾斜部分51并覆盖整个结晶半导体膜13b; 对形成在结晶半导体膜13a上的抗蚀剂膜15进行半曝光; 将p型杂质仅注入到晶体半导体膜13a的倾斜部分51中; 通过灰化除去在结晶半导体膜13a上形成的抗蚀剂膜15; 并将p型杂质注入到整个晶体半导体膜13a中。

公开(公告)号：US09240429B2

公开(公告)日：2016-01-19

申请号：US14363723

申请日：2012-07-06

申请人： Hiroki Mori ,  Masaki Migita ,  Youichi Nagai

发明人： Hiroki Mori ,  Masaki Migita ,  Youichi Nagai

IPC分类号： H01L27/146 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L27/14636 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L25/50 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/11826 ,  H01L2224/11903 ,  H01L2224/1308 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/7525 ,  H01L2224/75753 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/35121 ,  H01L2924/00014 ,  H01L2924/0103 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/00

摘要： An image pickup device includes a light-receiving device unit, a processing portion, a first connection body, and a second connection body. The first connection body electrically connects a first electrode of the light-receiving device unit to a corresponding second electrode of the processing portion. The first connection body includes an indium-containing solder portion disposed between the first electrode and the second electrode, and a barrier layer for suppressing alloying of the solder portion with the first electrode and the second electrode. The second connection body includes an alloy portion formed by alloying with a solder containing a material having a melting point equal to or higher than a melting point of the first connection body and a hardness higher than that of the first connection body.

摘要翻译： 图像拾取装置包括光接收装置单元，处理部分，第一连接体和第二连接体。 第一连接体将光接收装置单元的第一电极与处理部的相应的第二电极电连接。 第一连接体包括设置在第一电极和第二电极之间的含铟焊料部分和用于抑制焊料部分与第一电极和第二电极的合金化的阻挡层。 第二连接体包括通过与含有熔点等于或高于第一连接体的熔点的材料并且硬度高于第一连接体的硬度的焊料合金形成的合金部分。

公开(公告)号：US09042776B2

公开(公告)日：2015-05-26

申请号：US14094216

申请日：2013-12-02

申请人： Masatoshi Shiraki ,  Hiroki Mori

发明人： Masatoshi Shiraki ,  Hiroki Mori

IPC分类号： G03G21/18

CPC分类号： G03G21/1817 ,  G03G21/1821 ,  G03G21/1825 ,  G03G21/1857 ,  G03G21/1864 ,  G03G2221/1687

摘要： A process unit includes a drum frame supporting a photoconductor drum and a development frame supporting a development roller. The development cartridge is swingably supported by the drum frame at a coupling joint provided at a first side of the development frame and a support portion provided at a second side of the development frame. A center of rotation of the development roller is located in a position shifted from a line segment connecting a center of rotation of the coupling joint and a center of rotation of the photoconductor drum to an upstream side with respect to a direction of rotation of the coupling joint as viewed in an axial direction of the development roller, such that the development roller is pressed against the photoconductor drum by the action of the rotatory force received by the coupling joint.

摘要翻译： 处理单元包括支撑感光鼓的鼓框架和支撑显影辊的显影框架。 显影盒由设置在显影框架的第一侧处的联接接头处的鼓框架可摆动地支撑，以及设置在显影框架的第二侧的支撑部分。 显影辊的旋转中心位于从耦合接头的旋转中心和感光鼓的旋转中心相对于联接器的旋转方向的上游侧的线段偏移的位置 在显影辊的轴向观察时，通过由联接接头接受的转动力使显影辊压靠在感光鼓上。

公开(公告)号：US09028940B2

公开(公告)日：2015-05-12

申请号：US13182613

申请日：2011-07-14

申请人： Yoshinori Hasegawa ,  Hiroshi Adachi ,  Hiroki Mori ,  Kaoru Mitsugi ,  Naohiro Ikai

发明人： Yoshinori Hasegawa ,  Hiroshi Adachi ,  Hiroki Mori ,  Kaoru Mitsugi ,  Naohiro Ikai

IPC分类号： B32B3/00 ,  B32B3/06 ,  B32B3/08 ,  F16B5/00 ,  B65H21/00

CPC分类号： B65H21/00 ,  B65H2301/46325 ,  Y10T403/76 ,  Y10T428/19 ,  Y10T428/192 ,  Y10T428/197

摘要： A sheet roll comprises two glass films and a coupling portion, wherein end portions of the glass films are coupled together via the coupling portion and the coupled glass films are rolled into a roll shape. The coupling portion is a sheet-like coupling member formed of a resin film and placed on the end portions of the two glass films in a rolling direction so as to span therebetween. The sheet-like coupling member includes wide joint portions joined respectively to the end portions of the two glass films, and a necked portion which is narrower than the wide joint portions and is formed at a middle portion of the sheet-like coupling member in the rolling direction.

摘要翻译： 片卷包括两个玻璃膜和耦合部分，其中玻璃膜的端部通过联接部分耦合在一起，并且将耦合的玻璃膜卷成卷状。 联接部是由树脂膜形成的片状的连结部件，在两个玻璃膜的滚动方向的端部配置，以便在两者之间跨过。 片状连接部件包括分别连接到两个玻璃膜的端部的宽接合部分和比宽接合部分窄的颈部，并且形成在片状连接部件的中间部分 滚动方向。

公开(公告)号：US20150110991A1

公开(公告)日：2015-04-23

申请号：US14117127

申请日：2012-05-14

申请人： Yoshiharu Miwa ,  Yoshinori Hasegawa ,  Takayuki Noda ,  Hiroki Mori ,  Michiharu Eta

发明人： Yoshiharu Miwa ,  Yoshinori Hasegawa ,  Takayuki Noda ,  Hiroki Mori ,  Michiharu Eta

IPC分类号： B32B17/10 ,  B23K26/08 ,  B32B7/12 ,  B32B3/02 ,  B32B3/30 ,  B23K26/40 ,  C03B21/02

CPC分类号： B32B17/10155 ,  B23K26/083 ,  B23K26/40 ,  B23K2103/16 ,  B23K2103/172 ,  B23K2103/50 ,  B28D1/221 ,  B29C67/0044 ,  B32B17/10036 ,  B32B17/10293 ,  B32B17/10706 ,  B32B17/10743 ,  B32B17/1099 ,  B32B37/14 ,  B32B2250/40 ,  B32B2315/08 ,  B32B2457/12 ,  B32B2457/20 ,  B32B2457/208 ,  C03B33/04 ,  C03B33/074 ,  C03B33/076 ,  C03B33/091 ,  G02F1/133351 ,  Y10T156/1052 ,  Y10T156/1082 ,  Y10T428/24322 ,  Y10T428/24488 ,  B32B17/10 ,  B32B2369/00

摘要： Provided is a laminate (1) obtained by integrally laminating glass sheets (4) on both surfaces of a resin sheet (2). The glass sheets (4) have a thickness of 300 μm or less and end surfaces (4a) of the glass sheets (4) are chamfered.

摘要翻译： 提供了通过在树脂片（2）的两个表面上整合玻璃板（4）而获得的层压体（1）。 玻璃板（4）的厚度为300μm以下，玻璃板（4）的端面（4a）被倒角。

公开(公告)号：US08843027B2

公开(公告)日：2014-09-23

申请号：US13361593

申请日：2012-01-30

申请人： Hiroki Mori ,  Yasumasa Fujii

发明人： Hiroki Mori ,  Yasumasa Fujii

IPC分类号： G03G21/18 ,  G03G15/02

CPC分类号： G03G21/1814 ,  G03G15/0258

摘要： A photosensitive cartridge includes: a photosensitive member mounted to the photosensitive cartridge such that a surface thereof is movable in a first direction; an electric discharge electrode that extends in a second direction at an interval with the surface of the photosensitive member, the second direction being orthogonal to the first direction and parallel with the surface of the photosensitive member; a frame holding the photosensitive member and the electric discharge electrode and including an opening at an opposite side of the photosensitive member across the electric discharge electrode, the opening extending in the second direction; a cleaner movable along the opening so as to clean the electric discharge electrode; and a reinforcement member, which is a separate member from the cleaner, and which is contactable with the frame to reinforce a surrounding part of the opening.

摘要翻译： 感光盒包括：安装到感光盒的感光件，使得其表面可在第一方向上移动; 放电电极，其在与感光构件的表面间隔开的第二方向上延伸，第二方向与第一方向正交并与感光构件的表面平行; 保持感光构件和放电电极并且在感光构件的相对侧的开口，横跨放电电极的框架，该开口沿第二方向延伸; 可沿着开口移动的清洁剂，以清洁放电电极; 以及加强构件，其是与清洁器分离的构件，并且可与框架接触以加强开口的周围部分。

公开(公告)号：US08769989B2

公开(公告)日：2014-07-08

申请号：US13296583

申请日：2011-11-15

申请人： Kaoru Mitsugi ,  Naohiro Ikai ,  Hiroshi Adachi ,  Hiroki Mori

发明人： Kaoru Mitsugi ,  Naohiro Ikai ,  Hiroshi Adachi ,  Hiroki Mori

IPC分类号： C03B21/02

CPC分类号： C03B21/02 ,  B65H2301/4127 ,  C03B33/0235 ,  C03B33/033 ,  C03B33/091

摘要： A cleaving apparatus holds at least one surface (effective surface) of a band-like glass film in a non-contact state to suppress a situation that wavy portions reach a region in which the band-like glass film is to be cleaved. The cleaving apparatus cleaves the band-like glass film, which is being conveyed in a longitudinal direction thereof, along a conveyance direction thereof using a thermal stress generated through localized heating and cooling of a heated region. The localized heating and the cooling is performed on a preset cleaving line extending along the conveyance direction of the band-like glass film. The cleaving apparatus includes an air knife for supplying air to a front surface of the band-like glass film to retain the film on a conveyor at a position on an upstream side of a cleaving region in the conveyance direction.

摘要翻译： 切断装置在非接触状态下保持带状玻璃膜的至少一个表面（有效面），以抑制波状部到达将被剥离的带状玻璃膜的区域的情况。 裂开装置利用通过加热区域的局部加热和冷却产生的热应力沿着其沿其输送方向切割沿其纵向方向被输送的带状玻璃膜。 在沿着带状玻璃膜的输送方向延伸的预定的分割线上进行局部加热和冷却。 劈裂装置包括用于向带状玻璃膜的前表面供给空气的气刀，以将膜保持在传送方向上在劈开区域的上游侧的位置。