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公开(公告)号：US5730162A
公开(公告)日：1998-03-24
申请号：US583979
申请日：1996-01-11
IPC分类号： H01L21/00 , H01L21/306 , H01L21/677 , B08B13/00
CPC分类号： H01L21/67057 , H01L21/02052 , H01L21/67051 , H01L21/67781 , Y10S134/902 , Y10S414/137
摘要： A substrate washing apparatus includes a bath, a washing solution supply source, a first path for allowing the washing solution overflowing from the bath, a rinse solution supply source, a second path for passing the rinse solution, a common path communicating with the first and second paths and also with a bottom of the bath, a first valve, a second valve, a discharge path branched from the first path, and a control section, wherein the first valve includes a first body for opening/closing the first path, a third path arranged parallel to the first path and having a diameter smaller than a diameter of the first path, and a second body for opening/closing the third path, so that the first body is opened and the second body is closed, to allow the washing solution to flow into the bath, and on the other hand, the first body is closed, the second body is opened, to allow the rinse solution to flow into the bath, and the washing solution remaining in the first and third paths is discharged together with the rinse solution through the discharge path.
摘要翻译： 底物洗涤装置包括洗涤液，洗涤液供应源，用于使洗涤液从浴中溢出的第一路径，漂洗溶液供应源，用于通过冲洗溶液的第二路径，与第一和第二通道连通的共同路径 第二路径以及底部的第一阀，第一阀，第二阀，从第一路径分支的排出路径和控制部，其中第一阀包括用于打开/关闭第一路径的第一主体， 第三路径，其平行于第一路径布置并且具有小于第一路径的直径的直径;以及用于打开/关闭第三路径的第二主体，使得第一主体被打开并且第二主体被关闭，以允许 洗涤液流入浴中，另一方面关闭第一体，打开第二体，使冲洗液流入浴中，残留在第一和第三路径中的洗涤液排出 d与冲洗溶液一起通过排放路径。
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公开(公告)号：US5817185A
公开(公告)日：1998-10-06
申请号：US976262
申请日：1997-11-21
IPC分类号： H01L21/00 , H01L21/306 , H01L21/677 , B08B13/00
CPC分类号： H01L21/67057 , H01L21/02052 , H01L21/67051 , H01L21/67781 , Y10S134/902 , Y10S414/137
摘要： A method of washing substrates arranged at a substantially equal pitch internal in a cassette which includes steps of (a) transferring the substrates to a holder a pitch interval narrower than the arrangement pitch interval in said cassette; (b) supplying a washing solution into a processing bath; (c) conveying the holder holding the substrates into the processing bath; (d) dipping the substrates in the washing solution in the processing bath to wash the substrates; and (e) supplying a rinse solution into the processing bath to substitute the washing solution with the rinse solution to rinse the substrates in the processing bath.
摘要翻译： 一种洗涤在盒子内部以基本相同的间距排列的衬底的方法，包括以下步骤：（a）将衬底转移到保持器，该间距间隔窄于所述盒中的布置间距间隔; （b）将洗涤溶液供应到处理槽中; （c）将保持基板的支架输送到处理槽中; （d）将基材浸入处理槽中的洗涤溶液中以洗涤基材; 和（e）将冲洗溶液供应到处理槽中以用冲洗溶液替换洗涤溶液以冲洗处理槽中的基底。
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公开(公告)号：US6158447A
公开(公告)日：2000-12-12
申请号：US149852
申请日：1998-09-08
IPC分类号： B08B3/08 , H01L21/00 , H01L21/306 , H01L21/66 , B08B3/02
CPC分类号： H01L21/02052 , B08B3/08 , B24B37/013 , H01L21/67057 , H01L22/26 , Y10S134/902
摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.
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公开(公告)号：US06293288B2
公开(公告)日：2001-09-25
申请号：US09783956
申请日：2001-02-16
IPC分类号： B08B304
CPC分类号： H01L21/67248 , B08B3/044 , H01L21/67057
摘要： Cleaning liquid supply nozzles 32 are provided within a processing tank 30 for cleaning semiconductor wafers W. A distilled water source 31 and the cleaning liquid supply nozzles 32 are connected via a distilled water supply pipeline 33 and a chemical supply tank 36 and the cleaning liquid supply nozzles 32 are connected via a chemical supply pipeline 35. A flow-rate adjustment valve 37 is provided in the distilled water supply pipeline 33, and the supply of distilled water from the distilled water supply pipeline 33 to the processing tank 30 and the supply of a chemical from the chemical supply pipeline 35 to the processing tank 30 are switched by a switching valve 34. A temperature sensor 39 is disposed within the processing tank 30 for detecting the temperature of a processing liquid (the chemical or rinse liquid) therein and a CPU 40 controls the flow-rate adjustment valve 37 and the switching valve 34 on the basis of a temperature signal from the temperature sensor 39, so that the time required for the processing can be determined from the temperature of the cleaning liquid, thus improving the cleaning capability and cleaning precision.
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公开(公告)号：US06203627B1
公开(公告)日：2001-03-20
申请号：US09291970
申请日：1999-04-15
IPC分类号： B08B304
CPC分类号： H01L21/67248 , B08B3/044 , H01L21/67057
摘要： A cleaning method for cleaning, an object to be, processed. The object is cleaned by immersing the object into a cleaning liquid within a processing tank. The cleaning method includes the steps of: detecting the temperature of the cleaning liquid in which the object to be processed is immersed or to be immersed, and generating a corresponding temperature signal; determining an immersion time for the immersion of the object in the cleaning liquid, based on the temperature signal; and immersing the object to be processed in the cleaning liquid, for the immersion time.
摘要翻译： 一种清洁方法，一种待处理的物体。 通过将物体浸入处理槽内的清洁液中来清洁物体。 清洗方法包括以下步骤：检测被处理物体浸入或浸没的清洗液的温度，并产生相应的温度信号; 基于所述温度信号确定用于将所述物体浸入所述清洁液体中的浸渍时间; 并将待处理物体浸渍在清洗液中浸渍时间。
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公开(公告)号：US06082381A
公开(公告)日：2000-07-04
申请号：US156754
申请日：1998-09-16
申请人： Yuji Kamikawa , Naoki Shindo , Shigenori Kitahara
发明人： Yuji Kamikawa , Naoki Shindo , Shigenori Kitahara
IPC分类号： H01L21/304 , B08B3/10 , F04B43/04 , F04B43/073 , H01L21/00 , B08B3/04
CPC分类号： H01L21/67028 , B08B3/10 , F04B43/04 , F04B43/0736 , F04B2205/063 , Y10S134/902
摘要： A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.
摘要翻译： 清洗槽30储存清洗液体以清洁浸在清洗液中的半导体晶片W的表面。 清洗液供给管33将清洗槽30连接到纯水供给源31.药液容器34储存药液，药液供给管36将清洗液供给管33与药液容器34连接，经由 输液开闭切换阀35以及化学液体供给装置插入化学液体供给管36中。药液供给装置是隔膜泵37等往复泵。因此，预定量的药液 可以输入纯水或干燥气体发生器，以确保预定浓度的化学液体可用于洗涤或干燥处理，而与纯水或干燥气体载体气体的流量或压力的波动无关。
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公开(公告)号：US06869499B2
公开(公告)日：2005-03-22
申请号：US10157445
申请日：2002-05-28
申请人： Takayuki Toshima , Naoki Shindo , Tadashi Iino
发明人： Takayuki Toshima , Naoki Shindo , Tadashi Iino
IPC分类号： G03F7/42 , B08B7/00 , B08B9/08 , C23C16/00 , C23F1/00 , H01L21/027 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065
摘要： After semiconductor wafers W have been processed with ozone gas and steam fed into a processing vessel 10, air is fed into the processing vessel 10 from an air supply source connected to an ozone gas supply pipe 42 for feeding ozone gas into the processing vessel 10, whereby an atmosphere of the ozone gas in the processing vessel 10 is replaced with an atmosphere of the air.
摘要翻译： 半导体晶片W已经用臭氧气体和蒸汽进料到加工容器10中后，空气从连接到臭氧气体供应管42的空气供应源送入处理容器10，用于将臭氧气体输送到处理容器10中， 由此处理容器10中的臭氧气体的气氛被空气的气氛所代替。
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公开(公告)号：US06592678B1
公开(公告)日：2003-07-15
申请号：US09689408
申请日：2000-10-12
IPC分类号： B08B304
CPC分类号： H01L21/02052 , B08B3/08 , B24B37/013 , H01L21/67057 , H01L22/26 , Y10S134/902
摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.
摘要翻译： 清洁设备通常包括：清洗槽30，用于在其中存储清洁溶液以允许将半导体晶片W浸入清洁溶液中以清洁晶片W的表面; 用于将清洗槽30连接到纯水供给源31的清洗液供给管33; 用于在其中存储化学品的化学品储存容器34; 用于经由注入截止阀35将清洗液供给管33与药剂收容容器34连接的化学品供给管36; 以及用于将预定量的化学品从化学物质储存容器34注入到通过清洁溶液供应管33的纯水的隔膜泵37.清洗槽30中的清洁溶液的温度例如由温度传感器 基于从温度传感器44输出的检测信号，控制由隔膜泵37喷射的化学物质的量，使得化学品的浓度为预定浓度。 因此，可以注入预定量的化学品以便以预定浓度的化学品清洁晶片W.
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公开(公告)号：US06318386B1
公开(公告)日：2001-11-20
申请号：US09546291
申请日：2000-04-10
申请人： Yuji Kamikawa , Naoki Shindo , Shigenori Kitahara
发明人： Yuji Kamikawa , Naoki Shindo , Shigenori Kitahara
IPC分类号： B08B1300
CPC分类号： H01L21/67028 , B08B3/10 , F04B43/04 , F04B43/0736 , F04B2205/063 , Y10S134/902
摘要： A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.
摘要翻译： 清洗槽30储存清洗液体以清洁浸在清洗液中的半导体晶片W的表面。 清洗液供给管33将清洗槽30连接到纯水供给源31.化学液容器34储存药液，药液供给管36将清洗液供给管33与药液容器34连接，经由 输液开闭切换阀35以及化学液体供给装置插入化学液体供给管36中。药液供给装置是隔膜泵37等往复泵。因此，预定量的药液 可以输入纯水或干燥气体发生器，以确保预定浓度的化学液体可用于洗涤或干燥处理，而与纯水或干燥气体载体气体的流量或压力的波动无关。
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10.发明申请SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, RECORDING MEDIUM AND SOFTWARE 审中-公开基板处理系统，基板处理方法，记录介质和软件公开(公告)号：US20110011425A1
公开(公告)日：2011-01-20
申请号：US12885279
申请日：2010-09-17
申请人： Takayuki TOSHIMA , Naoki Shindo , Hiroshi Yano , Kotaro Tsurusaki
发明人： Takayuki TOSHIMA , Naoki Shindo , Hiroshi Yano , Kotaro Tsurusaki
IPC分类号： B08B3/00
CPC分类号： H01L21/67034 , H01L21/67028 , H01L21/67757 , Y10S134/902
摘要： A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.
摘要翻译： 基板处理系统1包括：用处理液处理基板W的处理槽3; 设置在处理罐3上方的干燥单元6; 以及用于在处理罐3和干燥单元6之间承载基板W的承载机构8.用于向干燥单元6供应处理气体的处理气体供应管线21和用于供应惰性气体的惰性气体供应管线24和25 干燥单元6连接到干燥单元6.用于排出从干燥单元6吹扫的气氛的第一排出管线和用于强制排出干燥单元6的第二排出管线27连接到干燥单元6。
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