公开(公告)号：US07842583B2

公开(公告)日：2010-11-30

申请号：US12333650

申请日：2008-12-12

申请人： Naoki Tsukamoto ,  Akihisa Shimomura

发明人： Naoki Tsukamoto ,  Akihisa Shimomura

IPC分类号： H01L21/30

CPC分类号： H01L21/76251 ,  B23K26/3576 ,  C30B33/04 ,  H01L21/02686 ,  H01L21/84 ,  H01L29/66772

摘要： A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.

摘要翻译： 制造半导体衬底，其中多个单晶半导体层被固定到具有低耐热性的基底衬底，例如玻璃衬底，其间插入有缓冲层。 制备多个单晶半导体衬底，每个单晶半导体衬底包括缓冲层和通过向每个半导体衬底添加氢离子并含有大量氢而形成的损伤区域。 将这些单晶半导体基板中的一个或多个固定到基底基板上并用频率为300MHz至300GHz的电磁波照射，从而沿着损伤区域分割。 重复单晶半导体衬底的夹持和电磁波照射，制造半导体衬底，其中所需数量的单晶半导体衬底被固定到基底衬底上。

公开(公告)号：US20090181552A1

公开(公告)日：2009-07-16

申请号：US12353384

申请日：2009-01-14

申请人： Akihisa Shimomura ,  Naoki Tsukamoto

发明人： Akihisa Shimomura ,  Naoki Tsukamoto

IPC分类号： H01L21/263 ,  H01L21/67

CPC分类号： H01L21/268 ,  B23K26/08 ,  B23K26/123 ,  B23K26/14 ,  B23K26/702 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/84 ,  H01L29/66772 ,  H01L29/78621

摘要： An SOI substrate having a single crystal semiconductor layer the surface of which has high planarity is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged region containing a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated to separate the single crystal semiconductor substrate in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation surface of a single crystal semiconductor layer which is separated from the single crystal semiconductor substrate and irradiation with a microwave is performed from the back side of the supporting substrate, the separation surface is irradiated with a laser beam. The single crystal semiconductor layer is melted by irradiation with the laser beam, so that the surface of the single crystal semiconductor layer is planarized and re-single-crystallization thereof is performed. In addition, the length of the melting time is increased by irradiation with the nitrogen gas and the microwave; thus, the re-single-crystallization is performed more efficiently.

摘要翻译： 制造具有表面具有高平坦度的单晶半导体层的SOI衬底。 掺杂氢的半导体衬底形成含有大量氢的损伤区域。 在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底以在损坏区域中分离单晶半导体衬底。 在从单晶半导体基板分离的单晶半导体层的分离面上喷射加热的高纯度氮气，从支撑基板的背面进行微波照射，分离面被照射 用激光束。 通过用激光束照射使单晶半导体层熔融，从而使单晶半导体层的表面平坦化并进行其单结晶化。 另外，通过用氮气和微波的照射来提高熔融时间的长度; 因此，更有效地进行再单晶化。

公开(公告)号：US08324086B2

公开(公告)日：2012-12-04

申请号：US12353384

申请日：2009-01-14

申请人： Akihisa Shimomura ,  Naoki Tsukamoto

发明人： Akihisa Shimomura ,  Naoki Tsukamoto

IPC分类号： H01L21/20

CPC分类号： H01L21/268 ,  B23K26/08 ,  B23K26/123 ,  B23K26/14 ,  B23K26/702 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/84 ,  H01L29/66772 ,  H01L29/78621

摘要： An SOI substrate having a single crystal semiconductor layer the surface of which has high planarity is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged region containing a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated to separate the single crystal semiconductor substrate in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation surface of a single crystal semiconductor layer which is separated from the single crystal semiconductor substrate and irradiation with a microwave is performed from the back side of the supporting substrate, the separation surface is irradiated with a laser beam. The single crystal semiconductor layer is melted by irradiation with the laser beam, so that the surface of the single crystal semiconductor layer is planarized and re-single-crystallization thereof is performed. In addition, the length of the melting time is increased by irradiation with the nitrogen gas and the microwave; thus, the re-single-crystallization is performed more efficiently.

摘要翻译： 制造具有表面具有高平坦度的单晶半导体层的SOI衬底。 掺杂氢的半导体衬底形成含有大量氢的损伤区域。 在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底以在损坏区域中分离单晶半导体衬底。 在从单晶半导体基板分离的单晶半导体层的分离面上喷射加热的高纯度氮气，从支撑基板的背面进行微波照射，分离面被照射 用激光束。 通过用激光束照射使单晶半导体层熔融，从而使单晶半导体层的表面平坦化并进行其单结晶化。 另外，通过用氮气和微波的照射来提高熔融时间的长度; 因此，更有效地进行再单晶化。

公开(公告)号：US09112067B2

公开(公告)日：2015-08-18

申请号：US12766389

申请日：2010-04-23

申请人： Teruyuki Fujii ,  Kohei Ohshima ,  Junya Maruyama ,  Akihisa Shimomura

发明人： Teruyuki Fujii ,  Kohei Ohshima ,  Junya Maruyama ,  Akihisa Shimomura

IPC分类号： H01L31/0224 ,  H01L31/0296 ,  H01L31/02 ,  H01L31/028 ,  H01L31/068 ,  H01L31/075

CPC分类号： H01L31/022425 ,  H01L31/02008 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/068 ,  H01L31/075 ,  Y02E10/50

摘要： An object relates to an electrode of a semiconductor device or a method for manufacturing a semiconductor device, which includes a bonding step, and problems are: (1) high resistance of a semiconductor device due to the use of an Al electrode, (2) formation of an alloy by Al and Si, (3) high resistance of a film formed by a sputtering method, and (4) defective bonding in a bonding step which is caused if a bonding surface has a large unevenness. A semiconductor device includes a metal substrate or a substrate provided with a metal film, a copper (Cu) plating film over and bonded to the metal substrate or the metal film by employing a thermocompression bonding method, a barrier film over the Cu plating film, a single crystal silicon film over the barrier film, and an electrode layer over the single crystal silicon film.

摘要翻译： 本发明涉及一种半导体器件的电极或半导体器件的制造方法，其包括接合工序，其问题是：（1）由于使用Al电极而导致的半导体器件的高电阻，（2） 通过Al和Si形成合金，（3）通过溅射法形成的膜的高电阻，以及（4）如果接合表面具有大的不平坦度时引起的接合步骤中的不良接合。 半导体装置包括金属基板或具有金属膜的金属基板，通过使用热压接法在金属基板或金属膜上结合的铜（Cu）电镀膜，在Cu镀膜上的阻挡膜， 阻挡膜上的单晶硅膜，以及单晶硅膜上的电极层。

公开(公告)号：US08895407B2

公开(公告)日：2014-11-25

申请号：US12891271

申请日：2010-09-27

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tatsuya Mizoi ,  Eiji Higa ,  Yoji Nagano

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tatsuya Mizoi ,  Eiji Higa ,  Yoji Nagano

IPC分类号： H01L21/46 ,  H01L21/762 ,  H01L27/12 ,  H01L51/00 ,  H01L29/786

CPC分类号： H01L27/1203 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654 ,  H01L51/0027 ,  H01L2224/03552

摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

摘要翻译： 证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。 该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。 该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

公开(公告)号：US08872021B2

公开(公告)日：2014-10-28

申请号：US12564991

申请日：2009-09-23

申请人： Sho Kato ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

发明人： Sho Kato ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

IPC分类号： H01L31/20 ,  H01L31/18 ,  H01L31/0256 ,  H01L31/0236 ,  H01L21/02 ,  H01L31/075 ,  H01L31/036

CPC分类号： H01L31/077 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

摘要翻译： 目的在于提高光电转换装置的转换效率，而不增加制造步骤。 光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层 和非晶区域，并且设置在所述缓冲层上，以及设置在所述第二半导体层上的具有与所述一种导电类型相反的导电类型的第三半导体层。 单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。

公开(公告)号：US08828844B2

公开(公告)日：2014-09-09

申请号：US12247487

申请日：2008-10-08

申请人： Hideto Ohnuma ,  Tetsuya Kakehata ,  Akihisa Shimomura ,  Shinya Sasagawa ,  Motomu Kurata

发明人： Hideto Ohnuma ,  Tetsuya Kakehata ,  Akihisa Shimomura ,  Shinya Sasagawa ,  Motomu Kurata

IPC分类号： H01L21/46 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/84 ,  H01L21/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/84

摘要： A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.

摘要翻译： 通过源气体的激发产生等离子体并通过从单晶半导体衬底的表面之一添加包含在等离子体中的离子种类而形成损伤区域; 在单晶半导体衬底的另一个表面上形成绝缘层; 支撑衬底牢固地附接到单晶半导体衬底，以便在其间插入绝缘层的单晶半导体衬底; 通过加热单晶半导体衬底，在损伤区域处分离成与单晶半导体层相连的支撑衬底和部分单晶半导体衬底; 在附着于支撑基板的单晶半导体层的表面进行干蚀刻， 通过用激光束照射单晶半导体层来使单晶半导体层重结晶，从而熔化至少一部分单晶半导体层。

公开(公告)号：US08772129B2

公开(公告)日：2014-07-08

申请号：US12891271

申请日：2010-09-27

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tatsuya Mizoi ,  Eiji Higa ,  Yoji Nagano

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tatsuya Mizoi ,  Eiji Higa ,  Yoji Nagano

IPC分类号： H01L21/46 ,  H01L21/762 ,  H01L27/12 ,  H01L51/00 ,  H01L29/786

摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

公开(公告)号：US08383487B2

公开(公告)日：2013-02-26

申请号：US13198171

申请日：2011-08-04

申请人： Hideomi Suzawa ,  Shinya Sasagawa ,  Akihisa Shimomura ,  Junpei Momo ,  Motomu Kurata ,  Taiga Muraoka ,  Kosei Nei

发明人： Hideomi Suzawa ,  Shinya Sasagawa ,  Akihisa Shimomura ,  Junpei Momo ,  Motomu Kurata ,  Taiga Muraoka ,  Kosei Nei

IPC分类号： H01L21/76

CPC分类号： H01L21/76254

摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.

摘要翻译： 在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层， 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层， 所述支撑基板对残留在所述单晶半导体层上的所述易碎区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理， 具有激光的晶体半导体层。

公开(公告)号：US08349705B2

公开(公告)日：2013-01-08

申请号：US13187754

申请日：2011-07-21

申请人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

发明人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

IPC分类号： H01L21/76

CPC分类号： H01L27/1266 ,  H01L21/02002 ,  H01L21/02038 ,  H01L21/3043 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L51/5206 ,  H01L2251/554

摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.