公开(公告)号：US08124457B2

公开(公告)日：2012-02-28

申请号：US12634350

申请日：2009-12-09

申请人： Takashi Oda ,  Shigenori Morita ,  Naoko Yoshida

发明人： Takashi Oda ,  Shigenori Morita ,  Naoko Yoshida

IPC分类号： H01L21/00

CPC分类号： H01L24/03 ,  H01L21/6835 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/04042 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： A wiring circuit layer 2 having a connecting conductor part 21 that can be connected to an electrode 31 of a semiconductor element 3 is formed on a metal support substrate 1 in a way such that the wiring circuit layer can be separated from the substrate 1, and that the connecting conductor part 21 is exposed on the upper face of the wiring circuit layer. The wiring circuit layer 2 is laminated on the element 3 while in a wafer state, and the connecting conductor part 21 and the electrode 31 are connected. Subsequently, the support substrate 1 is peeled from the wiring circuit layer 2, and the wafer is diced, whereby individual semiconductor devices are obtained.

摘要翻译： 在金属支撑基板1上形成具有能够与半导体元件3的电极31连接的连接导体部21的布线电路层2，使得布线电路层能够与基板1分离，并且 连接导体部21露出在布线电路层的上表面。 布线电路层2在晶片状态下层叠在元件3上，连接导体部21和电极31连接。 随后，将支撑基板1从布线电路层2剥离，并对晶片进行切割，从而获得各个半导体器件。

公开(公告)号：US08183093B2

公开(公告)日：2012-05-22

申请号：US12732767

申请日：2010-03-26

申请人： Naoko Yoshida ,  Takashi Oda ,  Shigenori Morita

发明人： Naoko Yoshida ,  Takashi Oda ,  Shigenori Morita

IPC分类号： H01L21/00

CPC分类号： H01L24/03 ,  H01L21/6835 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： A wiring circuit layer 2 having at least a wiring part and an insulating part, whose top and bottom surfaces (20A, 20B) is adhesive surfaces, is formed on a metal support substrate 1 in a way such that the layer 2 can be peeled from the substrate 1. Exposed in the first adhesive surface 20A of the wiring circuit layer 2 is a first connecting conductor part 21, which is connectable with an electrode 31 of a first semiconductor element 3 in a wafer state. After the wiring circuit layer 2 is laminated on and connected to the element 3, the metal support substrate 1 is peeled from the wiring circuit layer 2 to yield a semiconductor device 4. Another element may be connected to the other adhesive surface 20B exposed upon the peeling.

摘要翻译： 具有至少布线部分和绝缘部分的布线电路层2，其顶表面和底表面（20A，20B）是粘合表面，以使得层2可以从金属支撑基板1上剥离的方式形成在金属支撑基板1上 基板1.暴露在布线电路层2的第一粘合面20A中的是第一连接导体部21，其与晶片状态的第一半导体元件3的电极31连接。 在将电路层2层压并连接到元件3之后，金属支撑基板1从布线电路层2剥离，得到半导体器件4.另一个元件可以连接到暴露在元件3上的另一个粘合表面20B 剥皮

公开(公告)号：US08247890B2

公开(公告)日：2012-08-21

申请号：US12952404

申请日：2010-11-23

申请人： Takashi Oda ,  Shigenori Morita

发明人： Takashi Oda ,  Shigenori Morita

IPC分类号： H01L23/495

CPC分类号： H01L24/81 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/16 ,  H01L2221/68345 ,  H01L2224/10165 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16227 ,  H01L2224/29015 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A conductor layer 2 is formed as a circuit pattern on a base insulating layer 1, a terminal 3 is formed thereon, and a supporting column 4 is formed in the vicinity of the terminal on the upper face of the base insulating layer 1. Here, supposing the protrusion height B of the bump from the element to be connected is B, the height of the supporting column is H, the height of the terminal is h, and the layer thickness of the terminal is t, as measured from the upper face of the base insulating layer as the reference surface, the height H of the supporting column is determined to satisfy B

摘要翻译： 在基底绝缘层1上形成导体层2作为电路图案，在其上形成端子3，并且在基底绝缘层1的上表面上的端子附近形成支撑柱4.这里， 假设凸起的突出高度B与要连接的元件的B高度一致，支柱的高度为H，端子的高度为h，端子的层厚为t，从上表面 作为基准面的基底绝缘层的高度H被确定为满足B

公开(公告)号：US09636490B2

公开(公告)日：2017-05-02

申请号：US13881322

申请日：2011-10-24

申请人： Koichi Masaoka ,  Keizo Ikari ,  Takashi Oda ,  Katsunori Kobayashi ,  Hidetoshi Hamamoto ,  Masaki Ishibashi ,  Kiyotsuna Toyohara

发明人： Koichi Masaoka ,  Keizo Ikari ,  Takashi Oda ,  Katsunori Kobayashi ,  Hidetoshi Hamamoto ,  Masaki Ishibashi ,  Kiyotsuna Toyohara

IPC分类号： A61M5/00 ,  A61M37/00

CPC分类号： A61M37/0015 ,  A61M2037/0023 ,  A61M2037/0053 ,  A61M2037/0061

摘要： A microneedle and a microneedle array, which have both aspects of safety and easiness to use and can administer a predetermined dose of a medical agent without causing a pain by smoothly running into the skin surface layer of a patient, includes a frustum and a forward end portion thereon, the forward end portion having a forward end apex angle in the range of 15 to 60° and a forward end diameter in the range of 1 to 20 μm and satisfying the expression H/D≧5, where H is a total height of the microneedle, and D is a diameter of a bottom surface of the frustum).

公开(公告)号：US08722765B2

公开(公告)日：2014-05-13

申请号：US13469302

申请日：2012-05-11

申请人： Takashi Oda ,  Yasuaki Kai ,  Tomohiro Ito ,  Takashi Seino ,  Hironobu Muramatsu

发明人： Takashi Oda ,  Yasuaki Kai ,  Tomohiro Ito ,  Takashi Seino ,  Hironobu Muramatsu

IPC分类号： C08K9/10 ,  C08K3/18 ,  C01F7/02

CPC分类号： C01F7/02 ,  B82Y30/00 ,  C01F7/021 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/22 ,  C08K9/04 ,  C09C1/407

摘要： An alumina particle composite (1) includes an alumina particle (2) and an organic acid (3) chemically bonded to a surface of the alumina particle (2). Further, the alumina particle (2) has a short axis length of 1 to 10 nm, a long axis length of 20 to 400 nm, and an aspect ratio of 5 to 80, and is represented by Formula I, Al2O3·nH2O  Formula I where n is 0 or more.

摘要翻译： 氧化铝颗粒复合材料（1）包括氧化铝颗粒（2）和与氧化铝颗粒（2）的表面化学键合的有机酸（3）。 此外，氧化铝颗粒（2）的短轴长度为1〜10nm，长轴长度为20〜400nm，纵横比为5〜80，由式I表示，Al 2 O 3·nH 2 O式I 其中n为0以上。

公开(公告)号：US08420510B2

公开(公告)日：2013-04-16

申请号：US13530037

申请日：2012-06-21

申请人： Takashi Oda ,  Naohide Takamoto ,  Hiroyuki Senzai

发明人： Takashi Oda ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC分类号： H01L21/00

CPC分类号： H01L24/27 ,  H01L23/3114 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/27334 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/8191 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01029 ,  H01L2924/15787 ,  H01L2924/3512 ,  H01L2924/00

摘要： Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element.

摘要翻译： 提供一种制造半导体器件的方法，其中可以容易且可靠地填充三维安装的半导体元件之间的空间。 本发明的半导体器件的制造方法包括：在第一和第二表面上制备具有多个用于连接的构件的半导体晶片; 制备包括层压在基材上的压敏粘合剂层的切割片的层压膜和层压在压敏粘合剂层上的厚度等于或大于该部件的高度的固化膜 第一面上的连接; 将所述层叠膜的固化膜粘贴到所述半导体晶片，同时将所述固化膜面向所述第一表面，使得所述连接构件不暴露于所述压敏粘合剂层; 并切割半导体晶片以形成半导体元件。

公开(公告)号：US20130054040A1

公开(公告)日：2013-02-28

申请号：US13588080

申请日：2012-08-17

申请人： Hirotaka Takahashi ,  Yasushi Tomita ,  Takashi Oda ,  Eri Isozaki ,  Tsukasa Onishi ,  Kazuhiro Horikoshi ,  Katsuhiro Matsuda

发明人： Hirotaka Takahashi ,  Yasushi Tomita ,  Takashi Oda ,  Eri Isozaki ,  Tsukasa Onishi ,  Kazuhiro Horikoshi ,  Katsuhiro Matsuda

IPC分类号： G06F1/26

CPC分类号： H02J3/14 ,  H02J2003/003 ,  Y02B70/3225 ,  Y04S10/54 ,  Y04S20/222

摘要： It is an object of the present invention to provide a load leveling system of a power system capable of attaining load leveling in a distribution substation unit and a method thereof. Disclosed is a load leveling system of a power system with a controller having a major customer and lower transforming apparatus, and with a customer connected to the lower transforming apparatus via a low-voltage line. The system also has a communication unit between the customer and its own system, and control use time zones of devices within the customer; an electric demand prediction unit, and a first load leveling processing unit. By employing such an arranged system, it becomes possible to provide a load leveling system of a power system capable of realizing load leveling of both a distribution substation unit and a pole transformer unit.

摘要翻译： 本发明的目的是提供一种能够实现配电站单元中的负载调平的电力系统的负载均衡系统及其方法。 公开了一种具有控制器的电力系统的负载均衡系统，该控制器具有主要客户和较低转换装置，并且客户经由低压线连接到下变换装置。 该系统还具有客户与其自身系统之间的通信单元，并控制客户内设备的使用时区; 电力需求预测单元和第一负载均衡处理单元。 通过采用这种布置的系统，可以提供能够实现配电站单元和极点变压器单元的负载均衡的电力系统的负载均衡系统。

公开(公告)号：US20120326280A1

公开(公告)日：2012-12-27

申请号：US13530068

申请日：2012-06-21

申请人： Takashi Oda ,  Naohide Takamoto ,  Hiroyuki Senzai

发明人： Takashi Oda ,  Naohide Takamoto ,  Hiroyuki Senzai

IPC分类号： H01L23/544 ,  B32B7/12 ,  C09J7/02 ,  H01L21/78

CPC分类号： H01L24/27 ,  C09J7/22 ,  C09J7/30 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L23/29 ,  H01L23/3114 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/27334 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/8191 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/01029 ,  H01L2924/15787 ,  Y10T428/2826 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/3512 ,  H01L2924/00

摘要： Provided is a laminated film wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The laminated film of the present invention is a laminated film for filling the space between semiconductor elements that are electrically connected through a member or connection, the film including a dicing sheet in which a pressure-sensitive adhesive layer is laminated on a base material and a curable film that is laminated on the pressure-sensitive adhesive layer, wherein the curable film has a lowest melt viscosity at 50 to 200° C. of 1×102 Pa·s or more and 1×104 Pa·s or less.

摘要翻译： 提供一种层叠膜，其中可以容易且可靠地填充三维安装的半导体元件之间的空间。 本发明的层压膜是用于填充通过构件或连接电连接的半导体元件之间的空间的层压膜，该膜包括其中压敏粘合剂层层压在基材上的切割片和 层压在粘合剂层上的固化膜，其中固化膜在50〜200℃下的熔融粘度最低为1×102Pa·s以上且1×104Pa·s以下。

公开(公告)号：US20120289653A1

公开(公告)日：2012-11-15

申请号：US13469302

申请日：2012-05-11

申请人： Takashi Oda ,  Yasuaki Kai ,  Tomohiro Itou ,  Takashi Seino ,  Hironobu Muramatsu

发明人： Takashi Oda ,  Yasuaki Kai ,  Tomohiro Itou ,  Takashi Seino ,  Hironobu Muramatsu

IPC分类号： C08K3/22 ,  C08L33/12 ,  C08L69/00

CPC分类号： C01F7/02 ,  B82Y30/00 ,  C01F7/021 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/22 ,  C08K9/04 ,  C09C1/407

摘要： An alumina particle composite (1) includes an alumina particle (2) and an organic acid (3) chemically bonded to a surface of the alumina particle (2). Further, the alumina particle (2) has a short axis length of 1 to 10 nm, a long axis length of 20 to 400 nm, and an aspect ratio of 5 to 80, and is represented by Formula I, Al2O3.nH2O  Formula I where n is 0 or more.

摘要翻译： 氧化铝颗粒复合材料（1）包括氧化铝颗粒（2）和与氧化铝颗粒（2）的表面化学键合的有机酸（3）。 此外，氧化铝颗粒（2）的短轴长度为1〜10nm，长轴长度为20〜400nm，纵横比为5〜80，由式I表示，Al 2 O 3·nH 2 O式I 其中n为0以上。

公开(公告)号：US20120205820A1

公开(公告)日：2012-08-16

申请号：US13364592

申请日：2012-02-02

申请人： Takashi Oda ,  Kosuke Morita ,  Hiroyuki Senzai

发明人： Takashi Oda ,  Kosuke Morita ,  Hiroyuki Senzai

IPC分类号： H01L23/522 ,  B32B7/02 ,  B32B27/38 ,  H01L21/56

CPC分类号： H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L2224/29082 ,  H01L2224/73104 ,  H01L2224/83191 ,  Y10T428/24942 ,  Y10T428/2495

摘要： Provided are an encapsulating resin sheet having improved a connection reliability by improving a connection failure, and by suppressing intrusion of an inorganic filler between terminals of the semiconductor element and the interconnection circuit substrate, a semiconductor device using the same, and a fabricating method for the semiconductor device. The encapsulating resin sheet is an epoxy resin composition sheet having a two-layer structure of an inorganic filler containing layer and an inorganic filler non-containing layer, in which a melt viscosity of the inorganic filler containing layer is 1.0×102 to 2.0×104 Pa·s, a melt viscosity of the inorganic filler non-containing layer is 1.0×103 to 2.0×105 Pa·s, a viscosity difference between both layers is 1.5×104 Pa·s or more; and a thickness of the inorganic filler non-containing layer is ⅓ to ⅘ of a height of the connecting electrode portion formed in the semiconductor element.

摘要翻译： 提供一种封装树脂片，其通过改善连接故障而提高连接可靠性，并且通过抑制半导体元件和互连电路基板的端子之间的无机填料的侵入，使用该封装树脂片的半导体器件及其制造方法 半导体器件。 封装树脂片是具有无机填料含有层和无机填料不含层的两层结构的无机填料含有层的熔融粘度为1.0×10 2〜2.0×10 4的环氧树脂组合物片 Pa·s时，无机填料无含水层的熔融粘度为1.0×10 3〜2.0×10 5 Pa·s，两层之间的粘度差为1.5×10 4 Pa·s以上; 无机填料不含有层的厚度为半导体元件中形成的连接电极部的高度的1/3〜。。