公开(公告)号：US07945410B2

公开(公告)日：2011-05-17

申请号：US11836199

申请日：2007-08-09

申请人： Natsuyo Morioka ,  Seiji Ishikawa ,  Katsumi Ikegaya ,  Yasunori Yamaguchi ,  Kazuo Ito ,  Yuichi Hamamura

发明人： Natsuyo Morioka ,  Seiji Ishikawa ,  Katsumi Ikegaya ,  Yasunori Yamaguchi ,  Kazuo Ito ,  Yuichi Hamamura

IPC分类号： G01N37/00 ,  G06F19/00

CPC分类号： G05B15/02 ,  G05B17/02

摘要： An average fault ratio is calculated from product characteristics of a product as a target of yield prediction, in order to predict yield accurately in the course of manufacturing the prediction target product.With respect to a reference product, whose wiring pattern is different from the prediction target product but manufactured by the same manufacturing process, a monthly electric fault density is calculated from actually measured data. Respective average fault ratios are obtained from product characteristics of the prediction target product and the reference product. A monthly electric fault density of the prediction target product is obtained by multiplying the monthly electric fault density of the reference product by the ratio of the average fault ratios. The yield is calculated by using the monthly electric fault density of the month in which a yield prediction target lot of the prediction target product was processed.

摘要翻译： 从作为产量预测目标的产品的产品特性计算平均故障率，以便在制造预测目标产品的过程中准确地预测产量。 对于其参考产品，其布线图案与预测目标产品不同但通过相同的制造工艺制造，每月电故障密度由实际测量数据计算。 相应的平均故障率是从预测目标产品和参考产品的产品特性获得的。 通过将参考产品的每月电气故障密度乘以平均故障率的比率来获得预测目标乘积的每月电气故障密度。 通过使用处理预测目标产品的产量预测目标批次的月份的每月电气故障密度来计算产量。

公开(公告)号：US20080140330A1

公开(公告)日：2008-06-12

申请号：US11836199

申请日：2007-08-09

申请人： Natsuyo Morioka ,  Seiji Ishikawa ,  Katsumi Ikegaya ,  Yasunori Yamaguchi ,  Kazuo Ito ,  Yuichi Hamamura

发明人： Natsuyo Morioka ,  Seiji Ishikawa ,  Katsumi Ikegaya ,  Yasunori Yamaguchi ,  Kazuo Ito ,  Yuichi Hamamura

IPC分类号： G06F17/18 ,  G06F19/00

CPC分类号： G05B15/02 ,  G05B17/02

摘要： An average fault ratio is calculated from product characteristics of a product as a target of yield prediction, in order to predict yield accurately in the course of manufacturing the prediction target product.With respect to a reference product, whose wiring pattern is different from the prediction target product but manufactured by the same manufacturing process, a monthly electric fault density is calculated from actually measured data. Respective average fault ratios are obtained from product characteristics of the prediction target product and the reference product. A monthly electric fault density of the prediction target product is obtained by multiplying the monthly electric fault density of the reference product by the ratio of the average fault ratios. The yield is calculated by using the monthly electric fault density of the month in which a yield prediction target lot of the prediction target product was processed.

摘要翻译： 从作为产量预测目标的产品的产品特性计算平均故障率，以便在制造预测目标产品的过程中准确地预测产量。 对于其参考产品，其布线图案与预测目标产品不同但通过相同的制造工艺制造，每月电故障密度由实际测量数据计算。 相应的平均故障率是从预测目标产品和参考产品的产品特性获得的。 通过将参考产品的每月电气故障密度乘以平均故障率的比率来获得预测目标乘积的每月电气故障密度。 通过使用处理预测目标产品的产量预测目标批次的月份的每月电气故障密度来计算产量。

公开(公告)号：US06881352B2

公开(公告)日：2005-04-19

申请号：US10350061

申请日：2003-01-24

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： H05H1/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/00

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

摘要翻译： 一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。 控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型 传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果 成为目标值。 基于由最佳配方计算模型生成的配方来控制等离子体处理器。

公开(公告)号：US06733618B2

公开(公告)日：2004-05-11

申请号：US09946503

申请日：2001-09-06

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： C23F100

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

摘要翻译： 一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。 控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型 传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果 成为目标值。 基于由最佳配方计算模型生成的配方来控制等离子体处理器。

公开(公告)号：US06916396B2

公开(公告)日：2005-07-12

申请号：US10224652

申请日：2002-08-21

申请人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

发明人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/66 ,  H05H1/00

CPC分类号： H01L21/67253 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/32137 ,  H01L22/20

摘要： An etching system for subjecting a single film to be etched to etching involves a plurality of etching steps in which respective different recipes are applied. The etching system employs recipe generating means which fixes the recipe to be applied to the final etching step, affecting an underlying film making contact with the film to be etched, of the etching steps, to a preset recipe, and which generates a recipe to be applied to the residual etching step on the basis of the results of processing. Etching processing is conducted according to the recipes generated by the recipe generating means.

摘要翻译： 用于对单个膜进行蚀刻的蚀刻系统涉及多个蚀刻步骤，其中应用各自不同的配方。 蚀刻系统使用配方生成装置，其将要应用于最终蚀刻步骤的配方固定到蚀刻步骤的下一个膜，以将蚀刻步骤的蚀刻膜与下一个膜接触到预设配方，并且生成配方 基于处理结果应用于残留蚀刻步骤。 根据食谱产生装置产生的配方进行蚀刻处理。

公开(公告)号：US06611728B1

公开(公告)日：2003-08-26

申请号：US09389230

申请日：1999-09-03

申请人： Natsuyo Morioka ,  Hisafumi Iwata ,  Junko Konishi ,  Yoko Ikeda ,  Kazunori Nemoto ,  Makoto Ono ,  Yasuhiro Yoshitake

发明人： Natsuyo Morioka ,  Hisafumi Iwata ,  Junko Konishi ,  Yoko Ikeda ,  Kazunori Nemoto ,  Makoto Ono ,  Yasuhiro Yoshitake

IPC分类号： G06F1900

CPC分类号： G01N21/9501 ,  H01L22/12 ,  H01L22/20

摘要： An inspection system comprises an inspection machine for inspecting a work which is processed in one of the manufacturing processes of a manufacturing line and an analysis system for outputting an inspection history list obtained by making calculations from the inspected result. The inspection history list shows a matrix of first information as the inspection processes in which the work is inspected or the manufacturing processes corresponding to the inspection processes in which the work is inspected and second information as to the works inspected by the inspection machine.

摘要翻译： 检查系统包括检查机器，用于检查在生产线的一个制造过程中处理的工件和用于输出通过从检查结果进行计算而获得的检查履历表的分析系统。 检查历史列表显示作为检查工作的检查过程的第一信息矩阵或与检查工作相关的检查过程对应的制造过程以及由检查机检查的工件的第二信息。

公开(公告)号：US20060124243A1

公开(公告)日：2006-06-15

申请号：US11346298

申请日：2006-02-03

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

公开(公告)号：US20050236364A1

公开(公告)日：2005-10-27

申请号：US11154698

申请日：2005-06-17

申请人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

发明人： Akira Kagoshima ,  Motohiko Yoshigai ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Junichi Tanaka ,  Kenji Tamaki ,  Natsuyo Morioka

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/66 ,  H01L21/302

CPC分类号： H01L21/67253 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/32137 ,  H01L22/20

摘要： An etching method for subjecting a single film to be etched to etching comprised of a plurality of etching steps based on respectively different recipes, includes steps of generating and fixing a recipe which is a preset recipe to be applied to an etching step of the plurality of etching steps which affects an underlying film making contact with the single film to be etched, generating different recipes other than the preset recipe to be applied to other etching steps of the plurality of etching steps, wherein at least one of the different recipes for the other etching steps is generated on the basis of processed results, and conducting etching of the single film according to the recipes generated.

摘要翻译： 一种蚀刻方法，用于对单个膜进行蚀刻以基于各自不同的配方的多个蚀刻步骤进行的蚀刻，包括以下步骤：产生和固定作为要应用于多个蚀刻步骤的蚀刻步骤的预设配方的配方 蚀刻步骤，其影响与待蚀刻的单个膜接触的底层膜，产生除了应用于多个蚀刻步骤的其它蚀刻步骤的预设配方之外的不同配方，其中至少一个不同的配方用于另一个 基于处理结果产生蚀刻步骤，并根据生成的配方对单个膜进行蚀刻。

公开(公告)号：US20050022932A1

公开(公告)日：2005-02-03

申请号：US10933413

申请日：2004-09-03

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： H05H1/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  C23F1/00

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing control system for a plasma processing apparatus having a plasma processor for performing a plasma processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during the processing operation, a unit for providing a processed-result estimation model which estimates a processed result on the basis of a monitored output from the sensor and a preset processed-result estimation equation, a unit for providing an optimum recipe calculation model which calculates corrections to the processing conditions so that the processed result becomes a target value on the basis of the estimated result of the processed-result estimation model, and a unit for causing the processing apparatus to process the sample under the optimum processing conditions in the next processing step on the basis of a recipe generated from the optimum recipe calculation model.

摘要翻译： 一种用于等离子体处理装置的等离子体处理控制系统，其具有用于对容纳在真空处理室内的样品进行等离子体处理操作的等离子体处理装置，用于在处理操作期间监视处理参数的传感器，用于提供处理结果估计的单元 模型，其基于来自传感器的监视输出和预设处理结果估计方程来估计处理结果;单元，用于提供最佳配方计算模型，其计算对处理条件的校正，使得处理结果变为目标值 基于处理结果估计模型的估计结果，以及用于使处理装置根据从最佳配方计算模型生成的配方在下一个处理步骤中的最佳处理条件下处理样本的单元 。

公开(公告)号：US07601240B2

公开(公告)日：2009-10-13

申请号：US11346298

申请日：2006-02-03

申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

摘要： A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

摘要翻译： 等离子体处理系统包括：基于等离子体处理的配方对样品进行等离子体处理的第一单元;以及用于根据在第一单元中的样品的等离子体处理期间获得的监视值修改配方的第二单元。 基于改进的配方，下一个样品在第一单元中进行等离子体处理。