Diamond coated parts in a plasma reactor
    6.
    发明授权
    Diamond coated parts in a plasma reactor 失效
    在等离子体反应器中的金刚石涂层部件

    公开(公告)号:US06508911B1

    公开(公告)日:2003-01-21

    申请号:US09375243

    申请日:1999-08-16

    IPC分类号: H05H100

    摘要: A diamond coating formed on a bulk member used in a plasma processing chamber for processing a substrate such as a semiconductor wafer. The coating is particularly useful in a plasma etching chamber using a chlorine-based chemistry to etch metal. One class of such parts includes a dielectric chamber wall, in particular, a chamber wall through which RF or microwave energy is coupled into the chamber to support the plasma. For example, an RF inductive coil is positioned outside the chamber wall and inductively couples energy into the chamber. Exemplary substrates for the diamond coating include alumina, silicon nitride, silicon carbide, polysilicon, and a SiC/Si composite. Amorphous carbon may be substituted for diamond.

    摘要翻译: 在用于处理诸如半导体晶片的基板的等离子体处理室中的主体部件上形成的金刚石涂层。 该涂层在使用氯基化学蚀刻金属的等离子体蚀刻室中特别有用。 一类这样的部件包括电介质室壁,特别是室壁,RF或微波能量通过室壁耦合到室中以支撑等离子体。 例如,RF感应线圈定位在室壁外部并且将能量感应地耦合到腔室中。 用于金刚石涂层的示例性基底包括氧化铝,氮化硅,碳化硅,多晶硅和SiC / Si复合材料。 无定形碳可以代替金刚石。

    Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
    7.
    发明授权
    Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating 有权
    耐侵蚀等离子体室部件包括具有上覆热氧化涂层的金属基底结构

    公开(公告)号:US08129029B2

    公开(公告)日:2012-03-06

    申请号:US12004907

    申请日:2007-12-21

    IPC分类号: B32B9/00

    摘要: An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.

    摘要翻译: 描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。 该制品由金属或金属合金基材组成,其表面上具有金属或金属合金的氧化物的涂层。 氧化物涂层的结构本质上是柱状的。 构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大,并且其中氧化物涂层在氧化物之间的界面处被压缩 涂层和金属或金属合金基材。 通常,金属选自钇,钕,钐,铽,镝,铒,镱,钪,铪,铌或其组合。

    Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
    8.
    发明授权
    Clean, dense yttrium oxide coating protecting semiconductor processing apparatus 有权
    清洁,致密的氧化钇涂层保护半导体加工设备

    公开(公告)号:US08067067B2

    公开(公告)日:2011-11-29

    申请号:US10898113

    申请日:2004-07-22

    摘要: Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.

    摘要翻译: 本文公开了一种用于施加用于半导体处理装置的耐等离子体涂层的方法。 将涂层施加在通常包括2000系列或5000至7000系列的铝合金的基底上。 涂层通常包含Y,Sc,La,Ce,Eu,Dy等的氧化物或氟化物,或钇 - 铝 - 石榴石(YAG)。 涂层可以进一步包含约20体积%或更少的Al 2 O 3。 涂层通常使用选自热/火焰喷涂,等离子喷涂,溅射和化学气相沉积(CVD)的技术施加到铝合金基板或阳极氧化铝合金基板的表面上。 为了提供所需的耐腐蚀性,必须将涂层置于压缩状态。 这是通过在施加涂层期间控制沉积条件来实现的。

    Solid yttrium oxide-containing substrate which has been cleaned to remove impurities
    9.
    发明申请
    Solid yttrium oxide-containing substrate which has been cleaned to remove impurities 审中-公开
    固体含氧化钇基质已被清洗除去杂质

    公开(公告)号:US20110036874A1

    公开(公告)日:2011-02-17

    申请号:US12925271

    申请日:2010-10-18

    IPC分类号: B05B1/14

    摘要: Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

    摘要翻译: 本文公开了一种用于处理室的气体分配组件中的气体分配板,其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。 气体分配板包括通常为月牙形的多个通孔。 通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。 固体含氧化钇的基材通常包含至少99.9%的氧化钇,并且具有至少4.92g / cm 3的密度,约0.02%或更低的吸水率,以及在约10μm的范围内的平均晶粒尺寸 至约25μm。 本文还公开了用于制造和清洁含氧化钇气体分配板的方法。