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    Flat-panel type picture display device with insulating electron-propagation ducts
    2.
    发明授权
    Flat-panel type picture display device with insulating electron-propagation ducts 失效
    具有绝缘电子传播导管的平板式图像显示装置

    公开(公告)号：US5557296A

    公开(公告)日：1996-09-17

    申请号：US60330

    申请日：1993-05-11

    申请人： Nicolaas Lambert ,  Gerardus G. P. van Gorkom ,  Petrus H. F. Trompenaars ,  Siebe T. de Zwart

    发明人： Nicolaas Lambert ,  Gerardus G. P. van Gorkom ,  Petrus H. F. Trompenaars ,  Siebe T. de Zwart

    IPC分类号： G09G1/20 ,  H01J29/08 ,  H01J31/12 ,  H04N5/70 ,  H04N9/12 ,  G09G3/22

    CPC分类号： H01J29/085 ,  G09G1/20 ,  H01J31/124 ,  H01J31/126 ,  H04N5/70 ,  H04N9/12 ,  H01J2329/30 ,  H01J2329/8625

    摘要： Flat-panel type picture display device having a luminescent screen and a large number of electron propagation ducts operating by means of electron wall interaction. At a given resolution, hexagonal phosphor dot patterns in which dots are horizontally staggered generally produce fewer artefacts than in a 90.degree. tilted orientation. An addressing system for withdrawing electrons from the propagation ducts and for directing them towards the luminescent screen is preferably formed as a multistepped structure with a preselection structure of rows of preselection electrodes and a fine-selection structure of rows of fine-selection electrodes. To interconnect the fine-selection electrodes in parallel in a minimal number of groups, it is advantageous when the fine-selection electrodes are arranged parallel to the preselection electrodes.

    摘要翻译： 具有通过电子壁相互作用操作的荧光屏和大量电子传播导管的平板型图像显示装置。 在给定的分辨率下，点水平交错的六边形荧光点图案通常比90度倾斜方向产生较少的伪像。 优选地，用于从传播管道中取出电子并将它们引导到发光屏幕的寻址系统作为具有预选电极行的预选结构和精细选择电极行的精细选择结构的多步骤结构形成。 为了以最小数量的组并联连接精选电极，当精选电极平行于预选电极时是有利的。

    Method of semiconductor device for generating electron beams
    3.
    发明授权
    Method of semiconductor device for generating electron beams 失效
    用于产生电子束的半导体器件的方法

    公开(公告)号：US4370797A

    公开(公告)日：1983-02-01

    申请号：US268209

    申请日：1981-05-29

    申请人： Gerardus G. P. van Gorkom ,  Arthur M. E. Hoeberechts

    发明人： Gerardus G. P. van Gorkom ,  Arthur M. E. Hoeberechts

    IPC分类号： B01J23/86 ,  C07B61/00 ,  C07C1/00 ,  C07C1/04 ,  C07C67/00 ,  H01J1/308 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J31/38 ,  H01L21/223 ,  H01L21/26

    CPC分类号： H01J9/022 ,  H01J1/308

    摘要： The invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.

    摘要翻译： 本发明涉及分别具有这样的阴极的半导体阴极和相机管和显示管，其基于平行于半导体本体的表面延伸的p-n结中的雪崩击穿。 释放的电子通过设置在器件上的加速电极获得额外的能量。 所产生的效率提高使得平面硅技术中的这种阴极的制造成为可能。 由于在雪崩击穿时p-n结的耗尽区不延伸到表面，所释放的电子显示出尖锐的能量分布。 这使得这种阴极特别适用于照相机管。 此外，他们还可以应用于显示管和平板显示器。

    Electron-beam device and semiconductor device for use in such an electron-beam device
    4.
    发明授权
    Electron-beam device and semiconductor device for use in such an electron-beam device 失效
    用于这种电子束装置的电子束装置和半导体装置

    公开(公告)号：US4682074A

    公开(公告)日：1987-07-21

    申请号：US793883

    申请日：1985-11-01

    申请人： Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

    发明人： Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

    IPC分类号： H01J29/04 ,  H01J1/308 ,  H01J3/02 ,  H01J3/18 ,  H01J29/48

    CPC分类号： H01J29/481 ,  H01J3/021

    摘要： A device for recording or displaying images or for electron lithographic or electron microscopic uses, comprising in an evacuated envelope (1) a target (7) on which at least one electron beam (6) is focussed. This beam is generated by means of a semiconductor device (10) which comprises an electrically insulating layer (42) having an aperture (38) through which the beam passes. The layer carries at least four beam-forming electrodes (43 through 50) which are situated at regular intervals around the aperture (38). Each of the electrodes has such a potential that an n-pole field or a combination of n-pole fields is generated, where n is an even integer from 4 through 16. A suitable choice of the n-pole field will make it possible to impart substantially any desired shape to the beam (6) and thus the focus on the target.

    摘要翻译： 一种用于记录或显示图像或电子光刻或电子显微镜用途的装置，包括在真空的外壳（1）中聚焦有至少一个电子束（6）的靶（7）。 该光束通过半导体器件（10）产生，该半导体器件（10）包括具有光束通过的孔（38）的电绝缘层（42）。 该层承载至少四个波束形成电极（43至50），其围绕孔（38）以规则的间隔设置。 每个电极具有产生n极场或n极场的组合的电位，其中n是从4到16的偶数整数.n极场的适当选择将使得可以 将基本上任何期望的形状赋予梁（6），从而将焦点赋予目标。

    Cathode-ray tube and semiconductor device for use in such a cathode-ray tube
    7.
    发明授权
    Cathode-ray tube and semiconductor device for use in such a cathode-ray tube 失效
    用于这种阴极射线管的阴极射线管和半导体器件

    公开(公告)号：US4574216A

    公开(公告)日：1986-03-04

    申请号：US713584

    申请日：1985-03-19

    申请人： Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

    发明人： Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

    IPC分类号： H01J37/22 ,  B41J2/44 ,  H01J1/308 ,  H01J29/04 ,  H01J29/48 ,  H01J29/84 ,  H01J31/38

    CPC分类号： H01J1/308 ,  H01J23/065 ,  H01J29/84

    摘要： A semiconductor cathode is provided with deflection electrodes, with which a dipole field can be generated. As a result of this, electrons released at the surface of the semiconductor cathode leave the surface at a certain angle. For use inter alia in camera tubes, display tubes, such an inclined beam can be aligned without any problems. Positive ions which are released inter alia from residual gases and are accelerated in the direction of the cathode impinge on the cathode at an acute angle. As a result of this, the active part of the cathode is substantially not attacked by said positive ions, so that degradation is prevented.

    摘要翻译： 半导体阴极设置有偏转电极，可以产生偶极场。 结果，在半导体阴极表面放出的电子离开表面一定角度。 为了特别用于照相机管，显示管，这样的倾斜光束可以没有任何问题地对准。 由残留气体释放并在阴极方向加速的正离子以锐角撞击在阴极上。 结果，阴极的活性部分基本上不被所述正离子侵蚀，从而防止了劣化。

    Semiconductor device having a cold cathode
    9.
    发明授权
    Semiconductor device having a cold cathode 失效
    具有冷阴极的半导体器件

    公开(公告)号：US4766340A

    公开(公告)日：1988-08-23

    申请号：US21564

    申请日：1987-03-02

    申请人： Karel D. van der Mast ,  Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

    发明人： Karel D. van der Mast ,  Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

    IPC分类号： H01J29/04 ,  H01J1/308 ,  H01J31/12 ,  H01J31/38 ,  H01J37/073 ,  H01L31/00

    CPC分类号： H01J1/308

    摘要： In a semiconductor cathode, the electron-emitting part of a pn junction is provided in the tip of a projecting portion of the semiconductor surface which is situated within an opening in an insulating layer on which an acceleration electrode is disposed. Due to the increased electric field near the tip, a reduction of the work function (Schottky effect) is obtained. As a result, cathodes can be realized in which a material reducing the work function, such as caesium, may be either dispensed with or replaced, if required, by another material, which causes lower work function, but is less volatile. The field strength remains so low that no field emission occurs and serarate cathodes can be driven individually, which is favorable for applications in electron microscopy and electron lithography.

    摘要翻译： 在半导体阴极中，pn结的电子发射部分设置在半导体表面的突出部分的尖端中，半导体表面的突出部分位于设置有加速电极的绝缘层中的开口内。 由于尖端附近的电场增加，可以获得功函数（肖特基效应）的降低。 结果，可以实现阴极，其中如果需要，可以通过另一种材料来省去或替换诸如铯的功能降低功函数，这导致较低的功函数，但是较不易挥发。 场强保持如此之低，不会发生场发射，可以单独驱动平均阴极，这有利于电子显微镜和电子光刻中的应用。