-
公开(公告)号：US09859457B2
公开(公告)日：2018-01-02
申请号：US14715177
申请日：2015-05-18
Applicant: Nitek, Inc.
Inventor： Vinod Adivarahan , Asif Khan , Iftikhar Ahmad , Bin Zhang , Alexander Lunev
CPC classification number: H01L33/0075 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/22 , H01L33/32
Abstract: A template for a semiconductor device is made by providing an AGN substrate, growing a first layer of Group III nitrides on the substrate, depositing a thin metal layer on the first layer, annealing the metal such as gold so that it agglomerates to form a pattern of islands on the first layer; transferring the pattern into the first layer by etching then removing excess metal; and then depositing a second Group III nitride layer on the first layer. The second layer, through lateral overgrowth, coalesces over the gaps in the island pattern leaving a smooth surface with low defect density. A Group III semiconductor device may then be grown on the template, which may then be removed. Chlorine gas may be used for etching the pattern in the first layer and the remaining gold removed with aqua regia.
-
公开(公告)号：US20150263221A1
公开(公告)日：2015-09-17
申请号：US14715177
申请日：2015-05-18
Applicant: Nitek, Inc.
Inventor： Vinod Adivarahan , Asif KHAN , Iftikhar Ahmad , Bin Zhang , Alexander Lunev
CPC classification number: H01L33/0075 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/22 , H01L33/32
Abstract: A template for a semiconductor device is made by providing an AGN substrate, growing a first layer of Group III nitrides on the substrate, depositing a thin metal layer on the first layer, annealing the metal such as gold so that it agglomerates to form a pattern of islands on the first layer; transferring the pattern into the first layer by etching then removing excess metal; and then depositing a second Group III nitride layer on the first layer. The second layer, through lateral overgrowth, coalesces over the gaps in the island pattern leaving a smooth surface with low defect density. A Group III semiconductor device may then be grown on the template, which may then be removed. Chlorine gas may be used for etching the pattern in the first layer and the remaining gold removed with aqua regia.
Abstract translation: 半导体器件的模板通过提供AGN衬底，在衬底上生长第三层氮化物的第一层，在第一层上沉积薄金属层，使金属如金退火，使其聚集形成图案 岛上的第一层; 通过蚀刻将图案转移到第一层中，然后除去多余的金属; 然后在第一层上沉积第二III族氮化物层。 第二层通过横向过度生长，在岛状图案的间隙上聚结，留下了具有低缺陷密度的光滑表面。 然后可以在模板上生长III族半导体器件，然后可以将其去除。 氯气可以用于蚀刻第一层中的图案，剩余的黄金用王水去除。
-
公开(公告)号：US08698191B2
公开(公告)日：2014-04-15
申请号：US13897877
申请日：2013-05-20
Applicant: Nitek, Inc.
Inventor： Asif Khan , Vinod Adivarahan , Qhalid Fareed
IPC: H01L33/00
CPC classification number: H01L33/32 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs.
Abstract translation: 紫外线发光照明器及其制造方法包括紫外发光二极管阵列和第一和第二终端。 当跨越第一和第二端子以及因此施加到每个二极管的交流电时，照明器以与交流电流相对应的频率发射紫外光。 照明器包括具有紫外发光量子阱的模板，具有第一导电类型的第一缓冲层和具有第二导电类型的第二缓冲层，所有沉积物优选沉积在应变消除层上。 将第一和第二金属接触分别施加到具有第一和第二导电类型的半导体层以完成LED。 发射光谱范围为190nm至369nm。 照明器可以被配置成各种材料，几何形状，尺寸和设计。
