公开(公告)号：US20110024732A1

公开(公告)日：2011-02-03

申请号：US12899975

申请日：2010-10-07

申请人： Nobuharu OHSAWA ,  Hiroko ABE ,  Hideko INOUE ,  Satoko SHITAGAKI ,  Satoshi SEO

发明人： Nobuharu OHSAWA ,  Hiroko ABE ,  Hideko INOUE ,  Satoko SHITAGAKI ,  Satoshi SEO

IPC分类号： H01L51/30

CPC分类号： C09K11/06 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L27/3244 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5278 ,  H05B33/14 ,  Y10S428/917

摘要： It is an object of the present invention to obtain an organometallic complex that is capable of converting an excited triplet state into luminescence, a light-emitting element that can be driven for a long time, is high in luminous efficiency, and has a favorable long lifetime, and a light-emitting device using the light-emitting element. The present invention provides a light-emitting element that has a pair of electrodes (an anode and a cathode) and a light-emitting layer between a pair of electrodes, where the light-emitting layer includes an organometallic complex represented by the following general formula (5) and one of a compound that has a larger energy gap than the organometallic complex and a compound that has a larger ionization potential and a smaller electron affinity than the organometallic complex, and provides a light-emitting device using the light-emitting device.

摘要翻译： 本发明的目的是获得能够将激发的三线态转化为发光的有机金属络合物，长时间驱动的发光元件的发光效率高，并且具有良好的长 寿命和使用发光元件的发光器件。 本发明提供一种在一对电极之间具有一对电极（阳极和阴极）和发光层的发光元件，其中发光层包括由以下通式表示的有机金属络合物 （5）和具有比有机金属络合物更大的能隙的化合物和具有比有机金属络合物更大的电离电位和更小的电子亲和性的化合物之一，并且提供使用该发光器件的发光器件 。

公开(公告)号：US20130001473A1

公开(公告)日：2013-01-03

申请号：US13609970

申请日：2012-09-11

申请人： Hideko INOUE ,  Satoshi SEO ,  Satoko SHITAGAKI ,  Hiroko ABE

发明人： Hideko INOUE ,  Satoshi SEO ,  Satoko SHITAGAKI ,  Hiroko ABE

IPC分类号： C07F15/00 ,  C09K11/06

CPC分类号： H01L51/0085 ,  C07F15/0033 ,  C09K11/06 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/5016 ,  H05B33/14

摘要： An organometallic complex according to the present invention comprises a structure represented by the following general formula (1). In the formula, R1 to R5 are any one selected from the group consisting of hydrogen, a halogen element, an acyl group, an alkyl group, an alkoxy group, an aryl group, a cyano group, and a heterocyclic group, Ar is an aryl group having an electron-withdrawing group or a heterocyclic group having electron-drawing group, and M is an element of Group 9 or an element of Group 10.

摘要翻译： 根据本发明的有机金属络合物包含由以下通式（1）表示的结构。 在该式中，R 1至R 5为选自氢，卤素元素，酰基，烷基，烷氧基，芳基，氰基和杂环基中的任何一个，Ar为 具有吸电子基团的芳基或具有电子吸引基团的杂环基，M是第9族元素或第10族元素。

公开(公告)号：US20110163665A1

公开(公告)日：2011-07-07

申请号：US13048980

申请日：2011-03-16

申请人： Hideko INOUE ,  Satoshi SEO ,  Satoko SHITAGAKI ,  Hiroko ABE

发明人： Hideko INOUE ,  Satoshi SEO ,  Satoko SHITAGAKI ,  Hiroko ABE

IPC分类号： H01J1/62 ,  C07F15/00

CPC分类号： H01L51/0085 ,  C07F15/0033 ,  C09K11/06 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/5016 ,  H05B33/14

摘要： An organometallic complex according to the present invention comprises a structure represented by the following general formula (1). In the formula, R1 to R5 are any one selected from the group consisting of hydrogen, a halogen element, an acyl group, an alkyl group, an alkoxy group, an aryl group, a cyano group, and a heterocyclic group, Ar is an aryl group having an electron-withdrawing group or a heterocyclic group having electron-drawing group, and M is an element of Group 9 or an element of Group 10.

摘要翻译： 根据本发明的有机金属络合物包含由以下通式（1）表示的结构。 在该式中，R 1至R 5为选自氢，卤素元素，酰基，烷基，烷氧基，芳基，氰基和杂环基中的任何一个，Ar为 具有吸电子基团的芳基或具有电子吸引基团的杂环基，M是第9族元素或第10族元素。

公开(公告)号：US20120286257A1

公开(公告)日：2012-11-15

申请号：US13557884

申请日：2012-07-25

申请人： Satoko SHITAGAKI ,  Atsushi TOKUDA ,  Hiroko ABE ,  Ryoji NOMURA ,  Satoshi SEO

发明人： Satoko SHITAGAKI ,  Atsushi TOKUDA ,  Hiroko ABE ,  Ryoji NOMURA ,  Satoshi SEO

IPC分类号： H01L51/54

CPC分类号： C07D403/14 ,  C07D241/42 ,  C07D401/10 ,  C07D401/14 ,  C09K11/06 ,  C09K2211/1044 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/5012 ,  H01L51/5016 ,  H05B33/14 ,  Y10S428/917

摘要： Target is to provide an organic compound material having a bipolar character.A quinoxaline derivative represented by a general formula (1) is provided. In the formula, R1-R12 each independently represents a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an amino group, a dialkylamino group, a diarylamino group, a vinyl group, an aryl group, or a heterocyclic residue group. R9 and R10, R10 and R11, and R11 and R12 are each independent or respectively mutually bonded to form an aromatic ring. Ar1-Ar4 each independently represents an aryl group or a heterocyclic residue group. Ar1, Ar2, Ar3 and Ar4 are each independent or Ar1 and Ar2, and Ar3 and Ar4 are respectively mutually bonded directly, or Ar1 and Ar3, and Ar3 and Ar4 are bonded via oxygen (O), sulfur (S) or a carbonyl group.

摘要翻译： 目标是提供具有双极性的有机化合物。 提供由通式（1）表示的喹喔啉衍生物。 式中，R 1 -R 12各自独立地表示氢原子，卤素原子，低级烷基，烷氧基，酰基，硝基，氰基，氨基，二烷基氨基，二芳基氨基 ，乙烯基，芳基或杂环残基。 R9和R10，R10和R11，以及R11和R12各自独立地或分别相互结合形成芳香环。 Ar1-Ar4各自独立地表示芳基或杂环残基。 Ar1，Ar2，Ar3和Ar4各自独立，Ar1和Ar2，Ar3和Ar4分别直接相互键合，或Ar1和Ar3，Ar3和Ar4通过氧（O），硫（S）或羰基 。

公开(公告)号：US20100055896A1

公开(公告)日：2010-03-04

申请号：US12618161

申请日：2009-11-13

申请人： Hiroko ABE ,  Mikio YUKAWA ,  Tamae TAKANO ,  Yoshinobu ASAMI ,  Kiyoshi KATO ,  Ryoji NOMURA ,  Yoshitaka MORIYA

发明人： Hiroko ABE ,  Mikio YUKAWA ,  Tamae TAKANO ,  Yoshinobu ASAMI ,  Kiyoshi KATO ,  Ryoji NOMURA ,  Yoshitaka MORIYA

IPC分类号： H01L21/3205

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L27/283 ,  H01L51/0059

摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

摘要翻译： 本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。 本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

公开(公告)号：US20100295034A1

公开(公告)日：2010-11-25

申请号：US12847352

申请日：2010-07-30

申请人： Hiroko ABE ,  Yuji IWAKI ,  Mikio YUKAWA ,  Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Yasuko WATANABE ,  Yoshitaka MORIYA

发明人： Hiroko ABE ,  Yuji IWAKI ,  Mikio YUKAWA ,  Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Yasuko WATANABE ,  Yoshitaka MORIYA

IPC分类号： H01L51/00 ,  H01L23/52 ,  H01L45/00

CPC分类号： H01L51/0579 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/112 ,  H01L27/115 ,  H01L51/0051 ,  H01L51/0059

摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

摘要翻译： 本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。 此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。 半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层， 并且存储元件包括第一导电层，有机化合物和第二导电层。 根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

公开(公告)号：US20110227137A1

公开(公告)日：2011-09-22

申请号：US13151299

申请日：2011-06-02

申请人： Ryoji NOMURA ,  Hiroko ABE ,  Yuji IWAKI ,  Shunpei YAMAZAKI

发明人： Ryoji NOMURA ,  Hiroko ABE ,  Yuji IWAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L31/09 ,  H01L31/0352 ,  B82Y99/00

CPC分类号： G11C16/22 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0059 ,  G11C13/04 ,  G11C17/16 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0051 ,  H01L51/0059

摘要： The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.

摘要翻译： 本发明提供了一种半导体器件，其包括具有包括多个存储单元的存储单元阵列的存储器，控制存储器的控制电路和天线，其中存储单元阵列具有在第一 方向和沿与第一方向不同的第二方向延伸的多个字线，并且多个存储单元中的每一个具有设置在位线和字线之间的有机化合物层。 通过向有机化合物层施加光学或电动作来写入数据。

公开(公告)号：US20110031469A1

公开(公告)日：2011-02-10

申请号：US12904313

申请日：2010-10-14

申请人： Shunpei YAMAZAKI ,  Hiroko ABE ,  Yukie NEMOTO ,  Ryoji NOMURA ,  Mikio YUKAWA

发明人： Shunpei YAMAZAKI ,  Hiroko ABE ,  Yukie NEMOTO ,  Ryoji NOMURA ,  Mikio YUKAWA

IPC分类号： H01L45/00 ,  H01L29/786

CPC分类号： H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

摘要翻译： 本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。 本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作 天线。 存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。 用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

公开(公告)号：US20090121874A1

公开(公告)日：2009-05-14

申请号：US12349650

申请日：2009-01-07

申请人： Ryoji NOMURA ,  Hiroko ABE ,  Yuji IWAKI ,  Shunpei YAMAZAKI

发明人： Ryoji NOMURA ,  Hiroko ABE ,  Yuji IWAKI ,  Shunpei YAMAZAKI

IPC分类号： G08B13/14

CPC分类号： G11C16/22 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0059 ,  G11C13/04 ,  G11C17/16 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0051 ,  H01L51/0059

摘要： The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.

摘要翻译： 本发明提供了一种半导体器件，其包括具有包括多个存储单元的存储单元阵列的存储器，控制存储器的控制电路和天线，其中存储单元阵列具有在第一 方向和沿与第一方向不同的第二方向延伸的多个字线，并且多个存储单元中的每一个具有设置在位线和字线之间的有机化合物层。 通过向有机化合物层施加光学或电动作来写入数据。