Method and apparatus for inspecting reticle
    1.
    发明授权
    Method and apparatus for inspecting reticle 有权
    检查掩模版的方法和装置

    公开(公告)号:US08064681B2

    公开(公告)日:2011-11-22

    申请号:US12292660

    申请日:2008-11-24

    IPC分类号: G06K9/00

    摘要: The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.

    摘要翻译: 本发明提供了一种掩模版检查技术,其能够在同一层上的双重图案化技术中,使图案之间的相对位置能够在暴露于样品(例如晶片)时成为缺陷的图案被评估。 用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有:用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元,用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元,用于找到两个标线之间的图案之间的相对位置; 评估单元,用于基于所述相对位置分配所述重叠精度的指标,并评估所述两个标线是否需要修理; 以及评价结果输出单元,用于输出评估结果。

    Method and apparatus for inspecting reticle
    2.
    发明申请
    Method and apparatus for inspecting reticle 有权
    检查掩模版的方法和装置

    公开(公告)号:US20090136116A1

    公开(公告)日:2009-05-28

    申请号:US12292660

    申请日:2008-11-24

    IPC分类号: G06K9/00

    摘要: The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.

    摘要翻译: 本发明提供了一种掩模版检查技术,其能够在同一层上的双重图案化技术中,使图案之间的相对位置能够在暴露于样品(例如晶片)时成为缺陷的图案被评估。 用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有:用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元,用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元,用于找到两个标线之间的图案之间的相对位置; 评估单元,用于基于所述相对位置分配所述重叠精度的指标,并评估所述两个标线是否需要修理; 以及评价结果输出单元,用于输出评估结果。

    Defect inspection method and its system
    3.
    发明申请
    Defect inspection method and its system 有权
    缺陷检查方法及其系统

    公开(公告)号:US20090206252A1

    公开(公告)日:2009-08-20

    申请号:US12320574

    申请日:2009-01-29

    IPC分类号: G01N23/00

    摘要: A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.

    摘要翻译: 一种能够容易地管理半导体集成图案的致命缺陷的方法,该方法能够存储由半导体集成电路设计者设计的每个图案的设计数据,以及存储具有根据其设计意图排列的图案重要性级别的设计意图数据 分别。 该方法还可以预测由于目标曝光系统等的特性而系统地产生的缺陷,同时在预先进行的模拟中将每个设计的电路图案暴露并描绘到晶片上,并将这些缺陷存储为热点信息。 此外,该方法还能够将设计意图数据与热点信息组合,以限制可能包括关于对象半导体集成电路的特性的高可能性的系统缺陷的检查点,并显着缩短缺陷检查时间。

    Defect inspection method and its system
    4.
    发明授权
    Defect inspection method and its system 有权
    缺陷检查方法及其系统

    公开(公告)号:US07943903B2

    公开(公告)日:2011-05-17

    申请号:US12320574

    申请日:2009-01-29

    IPC分类号: H01J37/153 G01N23/00

    摘要: A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.

    摘要翻译: 一种能够容易地管理半导体集成图案的致命缺陷的方法,该方法能够存储由半导体集成电路设计者设计的每个图案的设计数据,以及存储具有根据其设计意图排列的图案重要性级别的设计意图数据 分别。 该方法还可以预测由于目标曝光系统等的特性而系统地产生的缺陷,同时在预先进行的模拟中将每个设计的电路图案暴露并描绘到晶片上,并将这些缺陷存储为热点信息。 此外,该方法还能够将设计意图数据与热点信息组合,以限制可能包括关于对象半导体集成电路的特性的高可能性的系统缺陷的检查点,并显着缩短缺陷检查时间。

    Charged Particle Beam Microscope
    6.
    发明申请
    Charged Particle Beam Microscope 有权
    带电粒子束显微镜

    公开(公告)号:US20120327213A1

    公开(公告)日:2012-12-27

    申请号:US13580875

    申请日:2011-02-22

    IPC分类号: H04N7/18

    摘要: Disclosed is a charged particle beam microscope which can obtain information about pattern materials and stereostructure without lowering throughput of pattern dimension measurement. To achieve this, the charged particle beam microscope acquires a plurality of frame images by scanning the field of view of the sample (S304, 305), adds the images together (S307), computes the dimensions of the pattern formed on the sample (308) and at the same time acquires pattern information (314) using components of a frame image, such as a single frame image or subframe image, as a separated image (309, 310).

    摘要翻译: 公开了一种带电粒子束显微镜,其可以获得关于图案材料和立体结构的信息,而不降低图案尺寸测量的生产率。 为了实现这一点,带电粒子束显微镜通过扫描样本的视场来获取多个帧图像(S304,305),将图像相加在一起(S307),计算在样本(308)上形成的图案的尺寸 ),并且同时使用诸如单帧图像或子帧图像的帧图像的分量作为分离图像(309,310)获取图案信息(314)。

    Electron microscope
    7.
    发明授权
    Electron microscope 有权
    电子显微镜

    公开(公告)号:US08742342B2

    公开(公告)日:2014-06-03

    申请号:US13505951

    申请日:2010-11-01

    摘要: A scanning electron microscope suppresses a beam drift by reducing charging on a sample surface while suppressing resolution degradation upon observation of an insulator sample. An electron microscope includes an electron source and an objective lens that focuses an electron beam emitted from the electron source, which provides an image using a secondary signal generated from the sample irradiated with the electron beam. A magnetic body with a continuous structure and an inside diameter larger than an inside diameter of an upper pole piece that forms the objective lens is provided between the objective lens and the sample.

    摘要翻译: 扫描电子显微镜通过减少对样品表面的充电而抑制光束偏移,同时在观察绝缘体样品时抑制分辨率劣化。 电子显微镜包括电子源和物镜,其聚焦从电子源发射的电子束,其使用从照射电子束的样品产生的二次信号来提供图像。 在物镜和样品之间设置具有连续结构且内径大于形成物镜的上极片的内径的磁体。

    Scanning electron microscope
    8.
    发明授权
    Scanning electron microscope 有权
    扫描电子显微镜

    公开(公告)号:US08125518B2

    公开(公告)日:2012-02-28

    申请号:US13139315

    申请日:2009-11-24

    IPC分类号: H04N9/47

    摘要: Provided is a scanning electron microscope including: an image recording unit (112) which stores a plurality of acquired frame images; a correction analyzing handling unit (113) which calculates a drift amount between frame images and a drift amount between a plurality of field images constituting a frame image; and a data handling unit (111) which corrects positions of respective field images constituting the plurality of fields images according to the drift amount between the field images and superimposes the field images on one another so as to create a new frame image. This provides a scanning electron microscope which can obtain a clear frame image even if an image drift is caused during observation of a pattern on a semiconductor substrate or an insulating object.

    摘要翻译: 提供一种扫描电子显微镜,包括:图像记录单元,其存储多个获取的帧图像; 校正分析处理单元,其计算帧图像之间的漂移量和构成帧图像的多个场图像之间的漂移量; 以及数据处理单元(111),其根据场图像之间的漂移量校正构成多个场图像的各个场图像的位置,并将场图像彼此叠加,从而创建新的帧图像。 这提供了即使在观察半导体衬底或绝缘物体上的图案时引起图像漂移,也可以获得清晰的帧图像的扫描电子显微镜。

    Charged particle beam microscope
    9.
    发明授权
    Charged particle beam microscope 有权
    带电粒子束显微镜

    公开(公告)号:US09261360B2

    公开(公告)日:2016-02-16

    申请号:US13580875

    申请日:2011-02-22

    摘要: Disclosed is a charged particle beam microscope which can obtain information about pattern materials and stereostructure without lowering throughput of pattern dimension measurement. To achieve this, the charged particle beam microscope acquires a plurality of frame images by scanning the field of view of the sample (S304, 305), adds the images together (S307), computes the dimensions of the pattern formed on the sample (308) and at the same time acquires pattern information (314) using components of a frame image, such as a single frame image or subframe image, as a separated image (309, 310).

    摘要翻译: 公开了一种带电粒子束显微镜,其可以获得关于图案材料和立体结构的信息,而不降低图案尺寸测量的生产率。 为了实现这一点,带电粒子束显微镜通过扫描样本的视场来获取多个帧图像(S304,305),将图像相加在一起(S307),计算在样本(308)上形成的图案的尺寸 ),并且同时使用诸如单帧图像或子帧图像的帧图像的分量作为分离图像(309,310)获取图案信息(314)。

    Electron Microscope
    10.
    发明申请
    Electron Microscope 有权
    电子显微镜

    公开(公告)号:US20120217393A1

    公开(公告)日:2012-08-30

    申请号:US13505951

    申请日:2010-11-01

    IPC分类号: H01J37/26

    摘要: A scanning electron microscope suppresses a beam drift by reducing charging on a sample surface while suppressing resolution degradation upon observation of an insulator sample. An electron microscope includes an electron source and an objective lens that focuses an electron beam emitted from the electron source, which provides an image using a secondary signal generated from the sample irradiated with the electron beam. A magnetic body with a continuous structure and an inside diameter larger than an inside diameter of an upper pole piece that forms the objective lens is provided between the objective lens and the sample.

    摘要翻译: 扫描电子显微镜通过减少对样品表面的充电而抑制光束偏移,同时在观察绝缘体样品时抑制分辨率劣化。 电子显微镜包括电子源和物镜,其聚焦从电子源发射的电子束,其使用从照射电子束的样品产生的二次信号来提供图像。 在物镜和样品之间设置具有连续结构且内径大于形成物镜的上极片的内径的磁体。