公开(公告)号：US07767582B2

公开(公告)日：2010-08-03

申请号：US11525179

申请日：2006-09-22

申请人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

发明人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

IPC分类号： H01L21/311

CPC分类号： H01L21/32136 ,  H01L21/311 ,  H01L21/32139 ,  H01L28/55 ,  H01L28/65 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.

摘要翻译： 一种制造半导体器件的方法，包括在蚀刻靶膜上形成牺牲膜，在牺牲膜上形成蚀刻掩模，使用蚀刻掩模作为掩模蚀刻蚀刻目标膜，除去牺牲膜以允许蚀刻掩模 粘附到蚀刻目标膜上，并除去蚀刻掩模。

公开(公告)号：US20070082493A1

公开(公告)日：2007-04-12

申请号：US11525179

申请日：2006-09-22

申请人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

发明人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

IPC分类号： H01L21/311

CPC分类号： H01L21/32136 ,  H01L21/311 ,  H01L21/32139 ,  H01L28/55 ,  H01L28/65 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.

摘要翻译： 一种制造半导体器件的方法，包括在蚀刻靶膜上形成牺牲膜，在牺牲膜上形成蚀刻掩模，使用蚀刻掩模作为掩模蚀刻蚀刻目标膜，除去牺牲膜以允许蚀刻掩模 粘附到蚀刻目标膜上，并除去蚀刻掩模。

公开(公告)号：US06780278B2

公开(公告)日：2004-08-24

申请号：US09892481

申请日：2001-06-28

申请人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

发明人： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01J37/32532

摘要： A plasma processing apparatus comprises a grounded housing, a thin RF plate electrode, an opposite electrode facing the RF plate electrode, and a RF power source for applying a radio frequency to either the RF plate electrode or the opposite electrode to produce plasma between the two electrodes. If the radio frequency applied to the electrode is f (MHz), the parasitic capacity C (pF) between the grounded portion of the housing and a conductive portion through which the radio frequency propagates is less than 1210*f−0.9. The thickness of the RF plate electrode is 1 mm to 6 mm, and it is supported by a heat sink. The heat sink has a coolant passage in the proximity to the RF plate electrode. The heat sink also has a groove or a cavity in addition to the coolant passage, thereby reducing the value of the dielectric constant of the heat sink as a whole.

摘要翻译： 等离子体处理装置包括接地壳体，薄RF板电极，面对RF板电极的相对电极和用于将射频施加到RF板电极或相对电极的RF电源，以在两者之间产生等离子体 电极。 如果施加到电极的射频为f（MHz），则壳体的接地部分与射频传播的导电部分之间的寄生电容C（pF）小于1210×f <-0.9>。 RF板电极的厚度为1mm〜6mm，由散热片支撑。 散热器在RF板电极附近具有冷却剂通道。 除了冷却剂通道之外，散热器还具有凹槽或空腔，从而整体上降低了散热器的介电常数值。

公开(公告)号：US07400005B2

公开(公告)日：2008-07-15

申请号：US11142441

申请日：2005-06-02

申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

IPC分类号： H01L29/92

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

公开(公告)号：US20070093052A1

公开(公告)日：2007-04-26

申请号：US11565530

申请日：2006-11-30

申请人： Yoshiaki Shimooka ,  Hideki Shibata ,  Hideshi Miyajima ,  Kazuhiro Tomioka

发明人： Yoshiaki Shimooka ,  Hideki Shibata ,  Hideshi Miyajima ,  Kazuhiro Tomioka

IPC分类号： H01L21/4763

CPC分类号： H01L21/76885 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.

摘要翻译： 一种制造具有多个布线层的半导体器件的方法形成第一层间绝缘膜，在第一层间绝缘膜中形成用于布线的多个沟槽，在沟槽中填充金属膜以形成布线，蚀刻第一夹层 将布线作为掩模，并且去除布线之间的层间绝缘膜以提供要填充的沟槽，并且在要填充的沟槽中填充由低介电常数材料制成的第二层间绝缘膜。

公开(公告)号：US20060231876A1

公开(公告)日：2006-10-19

申请号：US11107750

申请日：2005-04-18

申请人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

发明人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

IPC分类号： H01L29/00

CPC分类号： H01L28/55 ,  H01L28/65

摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABO3 perovskite-type oxide that includes at least one of Pb, Ba and Sr as an A-site element and at least one of Zr, Ti, Ta, Nb, Mg, W, Fe and Co as a B-site element, wherein a radius of curvature of a side wall of the capacitor, when viewed from above or in a film thickness direction, is 250 [nm] or less, and a length of an arc with the radius of curvature is {250 [nm]×π/6 [rad]} or more.

摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底和电容器，其设置在半导体衬底之上并且被构造为使得电介质膜夹在下电极和上电极之间，电介质膜由 包含作为A位元素的Pb，Ba和Sr中的至少一种和Zr，Ti，Ta，Nb，Mg，W，Fe中的至少一种的ABO 3钙钛矿型氧化物，和 Co作为B位元素，其中当从上方或膜厚方向观察时，电容器的侧壁的曲率半径为250 [nm]以下，并且具有半径为 曲率为{250 [nm] xpi / 6 [rad]}以上。

公开(公告)号：US07115522B2

公开(公告)日：2006-10-03

申请号：US10886668

申请日：2004-07-09

申请人： Kazuhiro Tomioka ,  Haoren Zhuang

发明人： Kazuhiro Tomioka ,  Haoren Zhuang

IPC分类号： H01I21/302

CPC分类号： H01L21/02071 ,  H01L21/67069 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

摘要： A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum includes etching the conductive layer, and generating plasma and cleaning the substrate, to which an etching product adhere, by means of ions in the plasma. The cleaning includes heating the substrate to a first temperature, introducing gas, which contains chlorine and nitrogen and in which a ratio of chlorine atoms to nitrogen atoms is 9:1 to 5:5, and applying high-frequency power to an electrode, on which the substrate is placed.

摘要翻译： 一种用于制造半导体器件的方法，该半导体器件包括具有基本上由铂组成的导电层的待加工衬底，包括蚀刻导电层，并且通过等离子体中的离子产生等离子体并清洁蚀刻产物所附着的衬底。 清洁包括将基板加热到第一温度，引入含有氯和氮的气体，其中氯原子与氮原子的比例为9:1至5:5，并将高频电力施加到电极上 放置基板。

公开(公告)号：US20060180894A1

公开(公告)日：2006-08-17

申请号：US11142441

申请日：2005-06-02

申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

IPC分类号： H01L29/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

公开(公告)号：US5897713A

公开(公告)日：1999-04-27

申请号：US714998

申请日：1996-09-17

申请人： Kazuhiro Tomioka ,  Makoto Sekine

发明人： Kazuhiro Tomioka ,  Makoto Sekine

IPC分类号： H05H1/46 ,  C23C16/40 ,  C23C16/50 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/32146 ,  C23C16/401 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32165

摘要： A plasma generating apparatus includes a container defining a hermetic process room. The container is connected to an exhaust for exhausting an interior of the process room and setting the interior of the process room to a vacuum, and a supply for supplying a process gas into the process room. First and second coils are wound on the outer surface of the container and disposed coaxially in order to generate in the process room an electric field for converting the process gas into a plasma. The first and second coils are connected to first and second RF power supplies for respectively applying first and second RF powers. The first and second RF powers respectively have first and second frequencies. The first and second frequencies are both 2 MHz or more, and a difference between them is set to fall in a range of from 1 kHz to 2 MHz. Hence, mutual interference of the first and second RF powers generates a synthesized wave having a periodically changing amplitude. This synthesized wave generates in the process room a synthesized wave electric field to which ions in the plasma can follow.The synthesized wave electric field is utilized for controlling progress of dissociation of the process gas in the plasma.

摘要翻译： 等离子体发生装置包括限定密封处理室的容器。 容器连接到用于排出处理室的内部并将处理室的内部设置为真空的废气，以及用于将处理气体供应到处理室中的供应源。 第一和第二线圈卷绕在容器的外表面上并同轴设置，以便在处理室中产生用于将处理气体转换成等离子体的电场。 第一和第二线圈连接到分别施加第一和第二RF功率的第一和第二RF电源。 第一和第二RF功率分别具有第一和第二频率。 第一和第二频率均为2MHz以上，并且它们之间的差设定在1kHz至2MHz的范围内。 因此，第一和第二RF功率的相互干扰产生具有周期性变化幅度的合成波。 该合成波在处理室中产生等离子体中的离子可以遵循的合成波电场。 合成波电场用于控制等离子体中工艺气体离解的进程。

公开(公告)号：US5445710A

公开(公告)日：1995-08-29

申请号：US202372

申请日：1994-02-25

申请人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano ,  Kazuhiro Tomioka ,  Yasuhiro Ito ,  Haruki Mori

发明人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano ,  Kazuhiro Tomioka ,  Yasuhiro Ito ,  Haruki Mori

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/3213 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/31122 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.

摘要翻译： 一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜， 含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板 图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。