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    INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE
    2.
    发明申请
    INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE 有权
    互连结构，薄膜晶体管基板及其制造方法，作为显示器件

    公开(公告)号：US20110024761A1

    公开(公告)日：2011-02-03

    申请号：US12936572

    申请日：2009-04-17

    申请人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

    发明人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

    IPC分类号： H01L33/16 ,  H01L21/20

    CPC分类号： H01L21/26506 ,  H01L21/2236 ,  H01L21/76829 ,  H01L21/76838 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer.

    摘要翻译： 提供了一种直接接触技术，通过该技术可以消除由纯Al或Al合金构成的Al合金互连与半导体层之间的阻挡金属层，并且Al合金互连可以在宽的范围内直接且可靠地连接到半导体层 过程保证金 在互连结构中，从衬底侧依次从衬底上提供由纯Al或Al合金构成的半导体层和Al合金膜。 包含选自由氮，碳和氟组成的组中的至少一种元素和包含Al和Si的Al-Si扩散层的（N，C，F）层的多层结构按此顺序包括 从衬底侧在半导体层和Al合金膜之间。 （N，C，F）层中所含的至少一种元素即氮，碳或氟与包含在半导体层中的Si键合。

    Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device
    3.
    发明授权
    Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device 有权
    接线结构，薄膜晶体管基板，薄膜晶体管基板的制造方法以及显示装置

    公开(公告)号：US08535997B2

    公开(公告)日：2013-09-17

    申请号：US12999034

    申请日：2009-07-03

    申请人： Nobuyuki Kawakami ,  Shinya Fukuma ,  Aya Miki ,  Mototaka Ochi ,  Shinya Morita ,  Yoshihiro Yokota ,  Hiroshi Goto

    发明人： Nobuyuki Kawakami ,  Shinya Fukuma ,  Aya Miki ,  Mototaka Ochi ,  Shinya Morita ,  Yoshihiro Yokota ,  Hiroshi Goto

    IPC分类号： H01L21/84

    CPC分类号： H01L23/53238 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L21/28525 ,  H01L21/76843 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.

    摘要翻译： 提供一种直接接触技术，通过该技术可以消除由纯Cu或Cu合金构成的Cu合金布线与半导体层之间的阻挡金属层，并且Cu合金布线可以直接和可靠地连接到半导体层内 加工边缘宽 布线结构从衬底侧依次设置有半导体层和由纯Cu或Cu合金构成的Cu合金膜。 在半导体层和Cu合金膜之间包含层叠结构。 层叠结构由（N，C，F）层构成，其含有选自由氮，碳和氟组成的组中的至少一种元素，以及含有Cu和Si的Cu-Si扩散层， 这个顺序是从衬底一侧。 此外，至少从由氮，碳和氟组成的组中选择的一种元素与包含在半导体层中的Si键合。

    AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF 审中-公开
    基于AL的合金喷射目标及其制造方法

    公开(公告)号：US20090242394A1

    公开(公告)日：2009-10-01

    申请号：US12414877

    申请日：2009-03-31

    申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

    发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

    IPC分类号： C23C14/34 ,  C21D1/00

    CPC分类号： C23C14/3414 ,  C22C21/00 ,  C22F1/04

    摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

    摘要翻译： 本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷 在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。 本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。

    DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET
    6.
    发明申请
    DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET 审中-公开
    显示装置，用于制造显示装置的方法和喷射目标

    公开(公告)号：US20110008640A1

    公开(公告)日：2011-01-13

    申请号：US12922764

    申请日：2009-03-31

    申请人： Hiroshi Goto ,  Akira Nanbu ,  Junichi Nakai ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Aya Miki

    发明人： Hiroshi Goto ,  Akira Nanbu ,  Junichi Nakai ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Aya Miki

    IPC分类号： G02F1/1343 ,  C09K19/00 ,  C22F1/04 ,  C23C14/14

    CPC分类号： H01L29/458 ,  C22C21/00 ,  C22C21/10 ,  C23C14/3414 ,  H01L27/12 ,  H01L27/124 ,  H01L29/4908 ,  Y10T428/12049

    摘要： Disclosed is a display device comprising an aluminum alloy film. In a wiring structure of a thin-film transistor substrate for use in display devices, the aluminum alloy film can realize direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously realize low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process. In the display device, an oxide electroconductive film is in direct contact with an Al alloy film and at least a part of the Al alloy component is precipitated on the contact surface of the Al alloy film. The Al alloy film comprises at least one element (element X1) selected from the group consisting of Ni, Ag, Zn, and Co and at least one element (element X2) which, together with the element X1, can form an intermetallic compound. An intermetallic compound, which has a maximum diameter of not more than 150 nm and is represented by at least one of X1—X2 and Al—X1—X2, is formed in the Al alloy film.

    摘要翻译： 公开了一种包括铝合金膜的显示装置。 在用于显示装置的薄膜晶体管基板的布线结构中，铝合金膜可以实现铝合金薄膜和透明像素电极之间的直接接触，同时可以实现低电阻和耐热性，并且 可以通过在薄膜晶体管制造方法中使用的胺系剥离液和碱性显影液来提高耐腐蚀性。 在显示装置中，氧化物导电膜与Al合金膜直接接触，Al合金成分的至少一部分析出在Al合金膜的接触面上。 Al合金膜包括选自Ni，Ag，Zn和Co中的至少一种元素（元素X1）和与元素X1一起可以形成金属间化合物的至少一种元素（元素X2）。 在Al合金膜中形成具有最大直径不大于150nm并由至少一个X1-X2和Al-X1-X2表示的金属间化合物。

    Thin film transistor substrate and display device
    9.
    发明授权
    Thin film transistor substrate and display device 有权
    薄膜晶体管基板和显示装置

    公开(公告)号：US08217397B2

    公开(公告)日：2012-07-10

    申请号：US12812913

    申请日：2009-01-15

    申请人： Mototaka Ochi ,  Nobuyuki Kawakami ,  Katsufumi Tomihisa ,  Hiroshi Goto

    发明人： Mototaka Ochi ,  Nobuyuki Kawakami ,  Katsufumi Tomihisa ,  Hiroshi Goto

    IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

    CPC分类号： H01L29/458

    摘要： The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.

    摘要翻译： 本发明提供一种薄膜晶体管基板和显示装置，其中不会引起源电极和漏电极的干蚀刻速率的降低; 不产生蚀刻残留物; 并且可以在半导体层和诸如源极和漏极之类的金属线之间消除阻挡金属。 本发明是一种具有半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板，其中源电极2和漏电极3通过干式图案形成 并且包括包含0.1至1.5原子％的Si和/或Ge，0.1至3.0原子％的Ni和/或Co，以及0.1至0.5原子％的La和/或Nd的Al合金薄膜，并且薄膜 晶体管与半导体层1直接连接。

    Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same
    10.
    发明授权
    Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same 有权
    Al-Ni-La-Si系Al基合金溅射靶及其制造方法

    公开(公告)号：US08163143B2

    公开(公告)日：2012-04-24

    申请号：US12172442

    申请日：2008-07-14

    申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

    发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

    摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

    摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。