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    Method of making microstructure device, and microstructure device made by the same
    1.
    发明授权
    Method of making microstructure device, and microstructure device made by the same 有权
    制造微结构器件的方法及其制造的微结构器件

    公开(公告)号：US07871687B2

    公开(公告)日：2011-01-18

    申请号：US11902011

    申请日：2007-09-18

    申请人： Norinao Kouma ,  Yoshihiro Mizuno ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi ,  Ippei Sawaki

    发明人： Norinao Kouma ,  Yoshihiro Mizuno ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi ,  Ippei Sawaki

    IPC分类号： B32B3/06 ,  G02B7/182 ,  H01L23/58 ,  G01P3/44 ,  G01P15/097

    CPC分类号： B81C1/00682 ,  B81B2203/0136 ,  Y10T428/24025 ,  Y10T428/2457 ,  Y10T428/24612

    摘要： A microstructure device is made by processing a material substrate consisting of e.g. a first process layer, a second process layer and a middle layer arranged between the first and the second process layers. The microstructure device includes a first structural part and a second structural part that has a portion facing the first structural part via a gap. The first and the second structural parts are connected to each other by a connecting part extending across the gap. This connecting part is formed in the first process layer to be in contact with the middle layer. The microstructure device also includes a protective part extending from the first structural part toward the second structural part or vice versa. The protective part is formed in the first or second process layer to be in contact with the middle layer.

    摘要翻译： 微结构装置是通过加工由例如玻璃， 布置在第一和第二处理层之间的第一处理层，第二处理层和中间层。 微结构装置包括第一结构部分和第二结构部分，其具有经由间隙面对第一结构部分的部分。 第一和第二结构部件通过跨越间隙延伸的连接部分相互连接。 该连接部形成在第一处理层中以与中间层接触。 微结构装置还包括从第一结构部件朝向第二结构部件延伸的保护部件，反之亦然。 保护部分形成在第一或第二处理层中以与中间层接触。

    MICRO ROCKING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    MICRO ROCKING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    微型摇动装置及其制造方法

    公开(公告)号：US20090267445A1

    公开(公告)日：2009-10-29

    申请号：US12249677

    申请日：2008-10-10

    申请人： Yoshihiro MIZUNO ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi ,  Ippei Sawaki

    发明人： Yoshihiro MIZUNO ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi ,  Ippei Sawaki

    IPC分类号： H02N11/00 ,  B44C1/22

    CPC分类号： G02B26/0841 ,  B81B3/0005 ,  B81C1/0096 ,  H02N1/008

    摘要： A micro rocking device includes a frame, a rocking portion, a torsion connecting portion, and a second comb-like electrode, the rocking portion including a first comb-like electrode. The torsion connecting portion connects the frame and the rocking portion. The torsion connecting portion defines the axis of rotational displacement of the rocking portion. The second comb-like electrode attracts the first comb-like electrode and rotationally displaces the rocking portion. The first comb-like electrode has a plurality of first parallel electrode teeth which extend in the direction of the axis and which are spaced from each other in a direction crossing the extension direction. The second comb-like electrode has a plurality of second parallel electrode teeth which extend in the direction of the axis and which are spaced from each other in a direction crossing the extension direction.

    摘要翻译： 微型摆动装置包括框架，摇摆部分，扭转连接部分和第二梳状电极，摇摆部分包括第一梳状电极。 扭转连接部分连接框架和摆动部分。 扭转连接部分限定摆动部分的旋转位移的轴线。 第二梳状电极吸引第一梳状电极并使摆动部分旋转移位。 第一梳状电极具有多个第一平行电极齿，该第一平行电极齿在轴线方向上延伸并且在与延伸方向交叉的方向上彼此间隔开。 第二梳状电极具有多个第二平行电极齿，该第二平行电极齿在轴线方向上延伸并且在与延伸方向交叉的方向上彼此间隔开。

    Method of making microstructure device, and microstructure device made by the same
    5.
    发明申请
    Method of making microstructure device, and microstructure device made by the same 有权
    制造微结构器件的方法及其制造的微结构器件

    公开(公告)号：US20080075924A1

    公开(公告)日：2008-03-27

    申请号：US11902011

    申请日：2007-09-18

    申请人： Norinao Kouma ,  Yoshihiro Mizuno ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi ,  Ippei Sawaki

    发明人： Norinao Kouma ,  Yoshihiro Mizuno ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi ,  Ippei Sawaki

    IPC分类号： B32B3/30 ,  H01B13/00

    CPC分类号： B81C1/00682 ,  B81B2203/0136 ,  Y10T428/24025 ,  Y10T428/2457 ,  Y10T428/24612

    摘要： A microstructure device is made by processing a material substrate consisting of e.g. a first process layer, a second process layer and a middle layer arranged between the first and the second process layers. The microstructure device includes a first structural part and a second structural part that has a portion facing the first structural part via a gap. The first and the second structural parts are connected to each other by a connecting part extending across the gap. This connecting part is formed in the first process layer to be in contact with the middle layer. The microstructure device also includes a protective part extending from the first structural part toward the second structural part or vice versa. The protective part is formed in the first or second process layer to be in contact with the middle layer.

    摘要翻译： 微结构装置是通过加工由例如玻璃， 布置在第一和第二处理层之间的第一处理层，第二处理层和中间层。 微结构装置包括第一结构部分和第二结构部分，其具有经由间隙面对第一结构部分的部分。 第一和第二结构部件通过跨越间隙延伸的连接部分相互连接。 该连接部形成在第一处理层中以与中间层接触。 微结构装置还包括从第一结构部件朝向第二结构部件延伸的保护部件，反之亦然。 保护部分形成在第一或第二处理层中以与中间层接触。

    Micro-actuation element provided with torsion bars
    8.
    发明申请
    Micro-actuation element provided with torsion bars 有权
    配有扭杆的微动元件

    公开(公告)号：US20050200986A1

    公开(公告)日：2005-09-15

    申请号：US11101519

    申请日：2005-04-08

    申请人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Satoshi Ueda ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Hiromitsu Soneda ,  Norinao Kouma

    发明人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Satoshi Ueda ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Hiromitsu Soneda ,  Norinao Kouma

    IPC分类号： G02B26/08 ,  H02N1/00

    CPC分类号： G02B26/0841 ,  G02B26/085 ,  H02N1/008

    摘要： The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.

    摘要翻译： 微致动元件（X 1）包括可移动单元（111），框架（112）和用于连接它们的耦合器（113），其中单元，框架和耦合器一体形成在具有 由导电层（110a-110c），例如芯导电层（110b）和介于导电层（110a-110c）之间的绝缘层（110d，110e））组成的多层结构， 。 可移动单元（111）包括源于芯导电层（110b）的第一结构。 框架（112）包括源于芯导电层（110b）的第二结构。 耦合器（113）包括多个电分离的扭力杆（113a，113b），其产生在芯导电层（110b）中并连续地连接到第一结构和第二结构。

    Method for manufacturing microstructure
    9.
    发明授权
    Method for manufacturing microstructure 有权
    微结构制造方法

    公开(公告)号：US07033515B2

    公开(公告)日：2006-04-25

    申请号：US10686764

    申请日：2003-10-17

    申请人： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

    发明人： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00182 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81C2201/014 ,  B81C2201/0174 ,  G02B26/0841

    摘要： A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern 58 including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

    摘要翻译： 一种使用材料基板制造具有薄壁部分的微结构的方法。 材料基板具有包括第一导体层101，第二导体层102，第三导体层103，插入在第一导体层和第二导体层之间的第一绝缘层104和第二绝缘层105的层叠结构 插入在第二导体层和第三导体层之间。 第一绝缘层被图案化以具有用于覆盖第二导体层的薄壁形成区域的第一掩模部分。 图案化第二绝缘层以具有用于覆盖第二导体层的薄壁形成区域的第二掩模部分。 该方法包括：通过掩模图案58将材料基板从第一导体层蚀刻到第二绝缘层，从而在第二导体部分中形成薄壁部分，掩模图案58包括对应于薄壁形成区域的非屏蔽区域 第二导体层。