Solid-state imaging device
    1.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4360821A

    公开(公告)日:1982-11-23

    申请号:US66230

    申请日:1979-08-13

    IPC分类号: H01L27/146 H01L27/14

    CPC分类号: H01L27/14665

    摘要: In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.

    摘要翻译: 在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上,感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜 感光材料层; 一种固态成像装置,其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。 感光材料的氢含量优选为5原子%至30原子%,特别是10原子%至25原子%。

    Solid-state imaging device
    2.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4323912A

    公开(公告)日:1982-04-06

    申请号:US152690

    申请日:1980-05-23

    CPC分类号: H01L27/14665

    摘要: In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

    摘要翻译: 在具有半导体集成电路的固态成像装置中,其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上, 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极,施加到光透射电极的电压,从而偏压光电导区域 相对于其相对侧的区域,光入射侧的膜是正或负的; 一种固态成像装置,其特征在于,所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

    Solid-state color imaging device
    3.
    发明授权
    Solid-state color imaging device 失效
    固态彩色成像装置

    公开(公告)号:US4242694A

    公开(公告)日:1980-12-30

    申请号:US832676

    申请日:1977-09-12

    摘要: A solid-state color imaging device contains semiconductive photoelectric elements for light of the respective primary colors, and means for sequentially transmitting charges as electric signals, the charges having been generated and stored according to the quantities of the corresponding primary color light beams received by the photoelectric elements. Transparent conductive films are provided through transparent insulating films on the light receiving sides of the photoelectric elements for at least two primary color light beams, and the charge storage capacitances of the respective photoelectric elements or the ratios of the quantities of light actually reaching photoelectric transduction portions to the entering quantities of the corresponding primary color light beam in the respective photoelectric elements are set at predetermined values.

    摘要翻译: 固体彩色成像装置包含用于各种原色光的半导体光电元件,以及用于依次将电荷作为电信号传输的装置,电荷根据由所述原色接收的相应原色光束的量而被生成和存储 光电元件。 透明导电膜通过用于至少两个原色光束的光电元件的光接收侧上的透明绝缘膜提供,并且各个光电元件的电荷存储电容或实际到达光电转换部分的光量比 将相应的光电元件中的相应原色光束的输入量设定为预定值。

    Photoelectric element in a solid-state image pick-up device
    4.
    发明授权
    Photoelectric element in a solid-state image pick-up device 失效
    光电元件在固态图像拾取器件中

    公开(公告)号:US4143389A

    公开(公告)日:1979-03-06

    申请号:US823646

    申请日:1977-08-11

    CPC分类号: H01L31/1136 H01L27/14643

    摘要: In a solid-state image pickup device having photoelectric elements each of which includes one or more switching MOS field-effect transistors and which are arrayed in one dimension or two dimensions on one semiconductor substrate, and scanning circuits which address the photoelectric devices time-sequentially, a transparent or semitransparent electrode is disposed over a light detecting region provided for the switching field-effect transistor, with an insulating oxide film intervening therebetween, whereby a capacitance is formed between the electrode and the substrate, charges generated under the electrode by photoexcitation are stored in a charge-storage region including the capacitance for a certain time, and the stored charges are taken out by the scanning circuits to a signal output line connecting the drains of the transistors in common.

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4148051A

    公开(公告)日:1979-04-03

    申请号:US874939

    申请日:1978-02-03

    摘要: In a solid-state imaging device wherein at least one pn-junction photodiode and photo-signal detecting means adjacent thereto are disposed in a surface portion of a semiconductor substrate of one conductivity type, a solid-state imaging device characterized in that at least one window region is disposed within a semiconductor region which constitutes said photodiode and which has the opposite conductivity type to that of said semiconductor substrate, said window region "hollowing" said semiconductor region up to the surface of said semiconductor substrate and being made of a part of said semiconductor substrate.

    摘要翻译: 在其中至少一个pn结光电二极管和与其相邻的光信号检测装置设置在一种导电类型的半导体衬底的表面部分中的固态成像装置中,其特征在于至少一个 窗口区域设置在构成所述光电二极管并且具有与所述半导体衬底的导电类型相反的导电类型的半导体区域内,所述窗口区域“中空”所述半导体区域直到所述半导体衬底的表面,并且由所述半导体区域的一部分 所述半导体衬底。

    Solid-state imaging device
    7.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4268845A

    公开(公告)日:1981-05-19

    申请号:US96683

    申请日:1979-11-23

    CPC分类号: H01L27/14643 H04N5/2173

    摘要: A solid-state imaging device of a picture element construction made up of photodiodes consisting of an N-type semiconductor substrate, a P-type well region formed in the main surface of said semiconductor substrate, and an N-type region formed in said well region, and vertical switching insulated-gate field effect transistors which utilize said N-type region as either the source or the drain, characterized in that a video voltage is applied to said substrate.

    摘要翻译: 由N型半导体衬底,形成在所述半导体衬底的主表面中的P型阱区和形成在所述阱中的N型区组成的光电二极管构成的像素结构的固体摄像器件 区域和垂直开关绝缘栅场效应晶体管,其利用所述N型区域作为源极或漏极,其特征在于,将视频电压施加到所述衬底。

    Circuit for generating scanning pulses
    8.
    发明授权
    Circuit for generating scanning pulses 失效
    用于产生扫描脉冲的电路

    公开(公告)号:US4295055A

    公开(公告)日:1981-10-13

    申请号:US46028

    申请日:1979-06-06

    摘要: A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.

    摘要翻译: 一种用于产生扫描脉冲的电路,包括串联连接的多级基本电路,所述每个基本电路包括第一,第二和第三绝缘栅极场效应晶体管(MIST),每个绝缘栅场效应晶体管的第一和第二端子均为源极 所述第一MIST的所述第一端子用作时钟脉冲施加端子,所述第一MIST的所述栅极端子用作输入端子,所述第一MIST的所述第二端子和所述第一端子的所述第一端子 并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子,所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子,所述第三MIST的所述第二端子 被用作接地端子,所述第三MIST的所述栅极端子用作反馈输入端子。

    Solid-state imaging device
    9.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4223330A

    公开(公告)日:1980-09-16

    申请号:US5567

    申请日:1979-01-22

    CPC分类号: H01L27/14654

    摘要: In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.

    摘要翻译: 在具有在半导体衬底的一个主表面区域中设置为二维阵列的光电转换元件的立体成像器件中,垂直开关金属 - 绝缘体 - 半导体场效应晶体管和水平开关金属 - 绝缘体半导体 选择光电转换元件的场效应晶体管以及使开关晶体管“导通”和“截止”的垂直和水平扫描电路,其特征在于垂直开关金属 - 绝缘体半导体场效应晶体管 未选择的位置被置于更深的截止状态,即,对应于这些垂直开关金属 - 绝缘体 - 半导体场效应晶体管的栅极的半导体衬底的主表面区域被放置在累积水平。

    Solid-state imaging device
    10.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4514766A

    公开(公告)日:1985-04-30

    申请号:US482791

    申请日:1983-04-07

    摘要: A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.

    摘要翻译: 提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。 成像装置的特征在于,布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。 这导致设备的分辨率急剧增加。