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45 条记录 (耗时 0.042 秒)

    Solid-state imaging device
    1.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4323912A

    公开(公告)日：1982-04-06

    申请号：US152690

    申请日：1980-05-23

    申请人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    发明人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L27/14665

    摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

    摘要翻译： 在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上， 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域 相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

    Photoelectric device and method of producing the same
    2.
    发明授权
    Photoelectric device and method of producing the same 失效
    光电器件及其制造方法

    公开(公告)号：US4394749A

    公开(公告)日：1983-07-19

    申请号：US154999

    申请日：1980-05-30

    申请人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

    发明人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

    IPC分类号： H01L27/146 ,  G11C13/00

    CPC分类号： H01L27/14665

    摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.

    摘要翻译： 具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖 电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。 非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。 无定形硫族化物材料在以下方面非常有用。 在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此 可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

    Storage type photosensor containing silicon and hydrogen
    4.
    发明授权
    Storage type photosensor containing silicon and hydrogen 失效
    含硅和氢的存储型光电传感器

    公开(公告)号：US4255686A

    公开(公告)日：1981-03-10

    申请号：US39580

    申请日：1979-05-16

    申请人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

    发明人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

    IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01J31/38

    CPC分类号： H01J29/45

    摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.

    摘要翻译： 在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于 至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

    Photosensor
    5.
    发明授权
    Photosensor 失效
    光电传感器

    公开(公告)号：US4429325A

    公开(公告)日：1984-01-31

    申请号：US206780

    申请日：1980-11-14

    申请人： Yukio Takasaki ,  Tadaaki Hirai ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Yoshiaki Mori

    发明人： Yukio Takasaki ,  Tadaaki Hirai ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Yoshiaki Mori

    IPC分类号： H01L27/146 ,  H01L31/0264 ,  H04N5/335 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14665

    摘要： In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.

    摘要翻译： 在具有金属电极的光电传感器中，覆盖在金属电极上的至少一个光电转换层和覆盖在光电转换层上的透明或部分透明导电层，在金属电极与金属电极之间配置复合层， 光电转换层。 通过配置复合层，其表面上具有绝缘氧化膜的金属电极可以像不存在绝缘氧化膜那样被处理。 暗电流被抑制，光响应良好。 作为复合层的材料，通常是Sb2S3，As2Se3，As2S3，Sb2Se3等。

    Photoelectric device
    9.
    发明授权
    Photoelectric device 失效
    光电器件

    公开(公告)号：US4556816A

    公开(公告)日：1985-12-03

    申请号：US510910

    申请日：1983-07-05

    申请人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

    发明人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

    IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01L31/09 ,  H04N5/30 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H01J31/00 ,  H01J31/26

    CPC分类号： H01L31/095 ,  H01J29/456 ,  H01J9/233

    摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.

    摘要翻译： 公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的 层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物 ，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。